Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers

Cheng, Yang; Yu, Sisheng; Zhu, Menglin; Hwang, Jinwoo; Yang, Fengyuan

doi:10.1103/PhysRevLett.123.237206

Title: Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers

Journal Article · 05 December 2019 · Physical Review Letters

DOI: https://doi.org/10.1103/PhysRevLett.123.237206 · OSTI ID:1594162

Cheng, Yang ^[1]; Yu, Sisheng ^[2]; Zhu, Menglin ^[2]; Hwang, Jinwoo ^[2]; Yang, Fengyuan ^[2]

The Ohio State Univ., Columbus, OH (United States); The Ohio State University
The Ohio State Univ., Columbus, OH (United States)

The topological Hall effect has been a primary indicator of nontrivial spin textures in magnetic materials. We observe the evidence of the topological Hall effect in Pt/Cr₂O₃ bilayers grown on Al₂O₃ (0001) and Al₂O₃ (112¯0), where the Cr₂O₃ epitaxial film is an antiferromagnetic insulator. The Pt/Cr₂O₃ bilayers exhibit topological Hall resistivity for Cr₂O₃ thicknesses below 6 nm near and above room temperature, which is above the Neel temperature of Cr₂O₃, revealing the key role of thermal fluctuations in the formation of spin textures. In conclusion, the similarity of topological Hall signals in (0001)- and (112¯0)-oriented Cr₂O₃ films indicates that the emergence of spin textures is insensitive to crystalline orientation.

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Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0001304

OSTI ID:: 1594162

Report Number(s):: DOE-OSU--01304

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 23 Vol. 123; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers

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