Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers
Abstract
The topological Hall effect has been a primary indicator of nontrivial spin textures in magnetic materials. We observe the evidence of the topological Hall effect in Pt/Cr2O3 bilayers grown on Al2O3 (0001) and Al2O3 (112¯0), where the Cr2O3 epitaxial film is an antiferromagnetic insulator. The Pt/Cr2O3 bilayers exhibit topological Hall resistivity for Cr2O3 thicknesses below 6 nm near and above room temperature, which is above the Neel temperature of Cr2O3, revealing the key role of thermal fluctuations in the formation of spin textures. In conclusion, the similarity of topological Hall signals in (0001)- and (112¯0)-oriented Cr2O3 films indicates that the emergence of spin textures is insensitive to crystalline orientation.
- Authors:
-
- The Ohio State Univ., Columbus, OH (United States)
- Publication Date:
- Research Org.:
- The Ohio State Univ., Columbus, OH (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1594162
- Report Number(s):
- DOE-OSU-01304
Journal ID: ISSN 0031-9007; PRLTAO; TRN: US2101344
- Grant/Contract Number:
- SC0001304; D18AP00008
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 123; Journal Issue: 23; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Antiferromagnetic insulator; Topological Hall effect; Antiferromagnetism; Skyrmions; Spin Hall effect; Spin texture; Spin torque; Monte Carlo methods; Sputtering
Citation Formats
Cheng, Yang, Yu, Sisheng, Zhu, Menglin, Hwang, Jinwoo, and Yang, Fengyuan. Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers. United States: N. p., 2019.
Web. doi:10.1103/PhysRevLett.123.237206.
Cheng, Yang, Yu, Sisheng, Zhu, Menglin, Hwang, Jinwoo, & Yang, Fengyuan. Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers. United States. https://doi.org/10.1103/PhysRevLett.123.237206
Cheng, Yang, Yu, Sisheng, Zhu, Menglin, Hwang, Jinwoo, and Yang, Fengyuan. Thu .
"Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers". United States. https://doi.org/10.1103/PhysRevLett.123.237206. https://www.osti.gov/servlets/purl/1594162.
@article{osti_1594162,
title = {Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers},
author = {Cheng, Yang and Yu, Sisheng and Zhu, Menglin and Hwang, Jinwoo and Yang, Fengyuan},
abstractNote = {The topological Hall effect has been a primary indicator of nontrivial spin textures in magnetic materials. We observe the evidence of the topological Hall effect in Pt/Cr2O3 bilayers grown on Al2O3 (0001) and Al2O3 (112¯0), where the Cr2O3 epitaxial film is an antiferromagnetic insulator. The Pt/Cr2O3 bilayers exhibit topological Hall resistivity for Cr2O3 thicknesses below 6 nm near and above room temperature, which is above the Neel temperature of Cr2O3, revealing the key role of thermal fluctuations in the formation of spin textures. In conclusion, the similarity of topological Hall signals in (0001)- and (112¯0)-oriented Cr2O3 films indicates that the emergence of spin textures is insensitive to crystalline orientation.},
doi = {10.1103/PhysRevLett.123.237206},
journal = {Physical Review Letters},
number = 23,
volume = 123,
place = {United States},
year = {2019},
month = {12}
}
Web of Science
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