Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers
Abstract
Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior, that we dub as “antidoping,” was seen in rare-earth nickel oxides SmNiO3 , cobalt oxides SrCoO2.5 , Li-ion battery materials, and even MgO with metal vacancies. We describe the physical origin of antidoping as well as its inverse problem—the “design principles” that would enable an intelligent search of materials. We find that electron antidoping is expected in materials having preexisting trapped holes and is caused by the annihilation of such “hole polarons” via electron doping. Finally, this may offer an unconventional way of controlling conductivity.
- Authors:
-
- Univ. of Colorado, Boulder, CO (United States); Southern Univ. of Science and Technology, Shenzhen (China)
- Univ. of Colorado, Boulder, CO (United States); Univ. Federal do ABC, Santo Andre, Sao Paulo (Brazil)
- Univ. of Colorado, Boulder, CO (United States)
- Publication Date:
- Research Org.:
- Univ. of Colorado, Boulder, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Guangdong Innovative and Entrepreneurial Research Team Program; USDOE
- OSTI Identifier:
- 1594123
- Alternate Identifier(s):
- OSTI ID: 1498809
- Grant/Contract Number:
- SC0010467; 2017ZT07C062; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 122; Journal Issue: 10; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Liu, Qihang, Dalpian, Gustavo M., and Zunger, Alex. Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers. United States: N. p., 2019.
Web. doi:10.1103/PhysRevLett.122.106403.
Liu, Qihang, Dalpian, Gustavo M., & Zunger, Alex. Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers. United States. https://doi.org/10.1103/PhysRevLett.122.106403
Liu, Qihang, Dalpian, Gustavo M., and Zunger, Alex. Mon .
"Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers". United States. https://doi.org/10.1103/PhysRevLett.122.106403. https://www.osti.gov/servlets/purl/1594123.
@article{osti_1594123,
title = {Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers},
author = {Liu, Qihang and Dalpian, Gustavo M. and Zunger, Alex},
abstractNote = {Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior, that we dub as “antidoping,” was seen in rare-earth nickel oxides SmNiO3 , cobalt oxides SrCoO2.5 , Li-ion battery materials, and even MgO with metal vacancies. We describe the physical origin of antidoping as well as its inverse problem—the “design principles” that would enable an intelligent search of materials. We find that electron antidoping is expected in materials having preexisting trapped holes and is caused by the annihilation of such “hole polarons” via electron doping. Finally, this may offer an unconventional way of controlling conductivity.},
doi = {10.1103/PhysRevLett.122.106403},
journal = {Physical Review Letters},
number = 10,
volume = 122,
place = {United States},
year = {Mon Mar 11 00:00:00 EDT 2019},
month = {Mon Mar 11 00:00:00 EDT 2019}
}
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Works referencing / citing this record:
Carrier localization in perovskite nickelates from oxygen vacancies
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