Static Polystyrene Gate Charge Density Modulation of Dinaphthothienothiophene with Tetrafluorotetracyanoquinodimethane Layer Doping: Evidence from Conductivity and Seebeck Coefficient Measurements and Correlations

Zhang, Qingyang; Barrett, Brandon; Bragg, Arthur E.; Katz, Howard E.

doi:10.1021/acsaelm.9b00747

Title: Static Polystyrene Gate Charge Density Modulation of Dinaphthothienothiophene with Tetrafluorotetracyanoquinodimethane Layer Doping: Evidence from Conductivity and Seebeck Coefficient Measurements and Correlations

Full Record
Other Related Research

Abstract

We relate the static charging of organic field effect transistor (OFET) gate dielectric polymers, the resulting change in threshold voltage shift, and the modulation of thermoelectric properties of the transistor semiconductor. We utilize a bottom gate OFET structure with cross-linkable polystyrene and plain polystyrene (XLPS/PS) bilayer dielectrics and dinaphthothienothiophene (DNTT) organic molecular semiconductor with tetrafluorotetracyanoquinodimethane (F4TCNQ) doping layer. Conductivity and Seebeck coefficient are measured before and after charging. We find that the conductivity increases significantly, while the Seebeck coefficient decreases correspondingly in a trend of S ∝ ln(σ) after the dielectrics were negatively charged, resulting in an average of fivefold increase in power factor at the maximum charging level. Additionally, temperature-dependent conductivity measurements show that the activation energy decreases with the increasing conductivity. We calculate the Seebeck coefficient based on the activation energy and find the result is consistent with the Mott mobility edge model. This work confirms the charging mechanism in our previous published work, including the location of static charges in the bulk of the dielectric, and demonstrates modulation and enhancement of the thermoelectric properties of organic thermoelectric materials by adjacent chargeable dielectrics without changing the molecular microstructure or applying external gate voltage during operation.

Authors:

Zhang, Qingyang; Barrett, Brandon;

;

Publication Date:: Mon Nov 25 00:00:00 EST 2019

Research Org.:: Johns Hopkins Univ., Baltimore, MD (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1593842

Grant/Contract Number:: FG02-07ER46465

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Electronic Materials

Additional Journal Information:: Journal Volume: 1; Journal Issue: 12; Journal ID: ISSN 2637-6113

Publisher:: ACS Publications

Country of Publication:: United States

Language:: English

Subject:: static gate, Seebeck coefficient, organic semiconductor, conductivity, DNTT, organic field-effect transistor, doping, activation energy

Citation Formats


                    Zhang, Qingyang, Barrett, Brandon, Bragg, Arthur E., and Katz, Howard E. Static Polystyrene Gate Charge Density Modulation of Dinaphthothienothiophene with Tetrafluorotetracyanoquinodimethane Layer Doping: Evidence from Conductivity and Seebeck Coefficient Measurements and Correlations.  United States: N. p., 2019. 
Web.  doi:10.1021/acsaelm.9b00747.

Copy to clipboard


                    Zhang, Qingyang, Barrett, Brandon, Bragg, Arthur E., & Katz, Howard E. Static Polystyrene Gate Charge Density Modulation of Dinaphthothienothiophene with Tetrafluorotetracyanoquinodimethane Layer Doping: Evidence from Conductivity and Seebeck Coefficient Measurements and Correlations.  United States.  https://doi.org/10.1021/acsaelm.9b00747

Copy to clipboard


                    Zhang, Qingyang, Barrett, Brandon, Bragg, Arthur E., and Katz, Howard E. Mon .  
"Static Polystyrene Gate Charge Density Modulation of Dinaphthothienothiophene with Tetrafluorotetracyanoquinodimethane Layer Doping: Evidence from Conductivity and Seebeck Coefficient Measurements and Correlations".  United States.  https://doi.org/10.1021/acsaelm.9b00747.  https://www.osti.gov/servlets/purl/1593842.

Copy to clipboard


                    
@article{osti_1593842,

  title        = {Static Polystyrene Gate Charge Density Modulation of Dinaphthothienothiophene with Tetrafluorotetracyanoquinodimethane Layer Doping: Evidence from Conductivity and Seebeck Coefficient Measurements and Correlations},

  author       = {Zhang, Qingyang and Barrett, Brandon and Bragg, Arthur E. and Katz, Howard E.},

  abstractNote = {We relate the static charging of organic field effect transistor (OFET) gate dielectric polymers, the resulting change in threshold voltage shift, and the modulation of thermoelectric properties of the transistor semiconductor. We utilize a bottom gate OFET structure with cross-linkable polystyrene and plain polystyrene (XLPS/PS) bilayer dielectrics and dinaphthothienothiophene (DNTT) organic molecular semiconductor with tetrafluorotetracyanoquinodimethane (F4TCNQ) doping layer. Conductivity and Seebeck coefficient are measured before and after charging. We find that the conductivity increases significantly, while the Seebeck coefficient decreases correspondingly in a trend of S ∝ ln(σ) after the dielectrics were negatively charged, resulting in an average of fivefold increase in power factor at the maximum charging level. Additionally, temperature-dependent conductivity measurements show that the activation energy decreases with the increasing conductivity. We calculate the Seebeck coefficient based on the activation energy and find the result is consistent with the Mott mobility edge model. This work confirms the charging mechanism in our previous published work, including the location of static charges in the bulk of the dielectric, and demonstrates modulation and enhancement of the thermoelectric properties of organic thermoelectric materials by adjacent chargeable dielectrics without changing the molecular microstructure or applying external gate voltage during operation.},

  doi          = {10.1021/acsaelm.9b00747},

  journal      = {ACS Applied Electronic Materials},

  number       = 12,

  volume       = 1,

  place        = {United States},

  year         = {Mon Nov 25 00:00:00 EST 2019},

  month        = {Mon Nov 25 00:00:00 EST 2019}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1021/acsaelm.9b00747

Other availability

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics

Journal Article Zhang, Qingyang ; Kale, Tejaswini S. ; Plunkett, Evan ; ... - Macromolecules

Charge storage and trapping properties of polymer dielectrics govern the charge densities of adjacent semiconductors and greatly influence the on-off switching voltage (threshold voltage, V_th) of organic field-effect transistors (OFETs) when the polymers are used as gate insulators. Intentional charging of polymer dielectrics in OFETs can change V_th and affect the bias stress. We describe a chemical design and fabrication protocol to construct multilayer-stack dielectrics for pentacene-based OFETs using different polystyrene (PS)-based polymers in each layer, with oxidizable N,N-bis(4-methoxyphenyl)anilino (TPAOMe)-substituted styrene copolymers in arbitrary vertical positions in the stacks. Thermal, byproduct-free crosslinking of benzocyclobutene subunits provides integrity to the multilayermore »« less
Cited by 7
https://doi.org/10.1021/acs.macromol.8b00596

Full Text Available
Dopant-Dependent Increase in Seebeck Coefficient and Electrical Conductivity in Blended Polymers with Offset Carrier Energies

Journal Article Li, Hui ; Plunkett, Evan ; Cai, Zhengxu ; ... - Advanced Electronic Materials

Abstract The strong and counterproductive interrelationship of thermoelectric parameters remains a bottleneck to improving thermoelectric performance, especially in polymer‐based materials. In this paper, a compositional range is investigated over which there is decoupling of the electrical conductivity and Seebeck coefficient, achieving increases in at least one of these two parameters while the other is maintained or slightly increased as well. This is done using an alkylthio‐substituted polythiophene (PQTS12) as additive in poly(bisdodecylquaterthiophene) (PQT12) with tetrafluorotetracyanoquinodimethane (F4TCNQ) and nitrosyl tetrafluoroborate (NOBF4) as dopants. The power factor increases two orders of magnitude with the PQTS12 additive at constant doping level. Using amore »« less
Cited by 25
https://doi.org/10.1002/aelm.201800618

Full Text Available
Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics

Journal Article Plunkett, Evan ; Kale, Tejaswini S. ; Zhang, Qingyang ; ... - Applied Physics Letters

The ability to control the bulk and interfacial polarization of dielectric polymers is important to their application in organic electronics. As such, we examine the effect of the trifluoromethyl substituent on poly(3-trifluoromethylstyrene) (P3TFMS) as compared to unsubstituted polystyrene (PS) on the I-V relationships of pentacene-based organic field-effect transistors (OFETs). Single- and double-layered films of these polymers were used, with lower layers crosslinked through vinylbenzocyclobutene comonomers before deposition of upper layers. Control experiments verified that the electronic effect of the crosslinking was negligible. We find that the TFM substituent markedly and independently affects both the initial threshold voltage V_th and themore »« less
Cited by 3
https://doi.org/10.1063/1.5080951

Full Text Available
Effect of organic electroactive crystallites in a dielectric matrix on the electrical properties of a polymer dielectric

Journal Article Lee, Taein ; Luo, Yue ; Wang, Chuhong ; ... - Physical Review Materials

In this work, the effects of inserting chargeable α-quaterthiophene (α4T) crystallites in polystyrene (PS) multilayers used as a transistor gate and capacitor dielectric were investigated. X-ray diffraction (XRD), scanning electron microscopy with energy dispersive x-ray spectroscopy (SEM/EDS), and confocal microscopy indicated the formation of α4T crystallites in the PS matrix. A modified saturation-regime current voltage relationship was used to estimate organic field-effect transistor (OFET) threshold voltage V_TH shifting, and in turn the quantities of stored charge that were observed as a result of dielectric charging. The crystallites increased the maximum charge storage capacity as well as the charge retention capabilitymore »« less
https://doi.org/10.1103/physrevmaterials.7.065003
2-Aminoanthracene Crystallization in Its Compatible Polystyrene Block: RAFT Synthesis and Enhanced Charge Retention in Pentacene Transistor Gate Dielectrics

Journal Article Chi, Chen ; Song, Yuqi ; Lee, Taein ; ... - Macromolecules

We synthesized polystyrene-block-polyanthrylaminomethylstyrene (PS-b-PAAS) via RAFT reaction and side chain modification where the PAAS block is 50%. By blending 2-aminoanthracene (2AA) with PS-b-PAAS, the co-aggregation behavior of the PAAS block and 2AA within the thin film was observed by optical microscopy (OM) and x-ray diffraction. At 5 and 10 wt% of 2AA within the thin film, OM results showed a clear morphological difference between PS matrix and PS-b-PAAS matrix. Differences in the 2AA excited state lifetime in these matrices were also established using transient absorption spectroscopy (TAS). Blends were used as gate dielectrics in pentacene transistors. We compared characteristic voltagemore »« less
https://doi.org/10.1021/acs.macromol.3c01130

Similar Records