Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors
Abstract
We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal–insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ~20–30 cm2/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (<~220 K), the transfer curves exhibit unusual mesoscopic fluctuations and a current suppression near zero bias that is common to charge-density wave (CDW) systems. The fluctuations have a nonmonotonic temperature dependence and wash out at a temperature close to that of the bulk MIT, suggesting they may be a feature of quantum interference in the CDW state. Overall, our results demonstrate that quasi-1D TiS3 nanostructures represent a viable candidate for FET realization and that their functionality is influenced by complex phenomena.
- Authors:
-
[3];
[2];
[2];
[1]
- Univ. at Buffalo, NY (United States)
- Univ. of Nebraska, Lincoln, NE (United States)
- Univ. Paris-Saclay, Saint-Aubin (France); Synchrotron SOLEIL, Saint-Aubin (France)
- Publication Date:
- Research Org.:
- State Univ. of New York (SUNY), Albany, NY (United States); Univ. at Buffalo, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); NCORE; French National Research Agency (ANR)
- OSTI Identifier:
- 1593702
- Grant/Contract Number:
- FG02-04ER46180; 1740136; 1508541
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 13; Journal Issue: 1; Related Information: https://pubs.acs.org/doi/abs/10.1021/acsnano.8b08260; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 42 ENGINEERING; titanium trisulfide; transition-metal trichalcogenides; metal−insulator transition; charge-density wave; one-dimensional
Citation Formats
Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C., Dowben, Peter A., Sinitskii, Alexander, Singisetti, Uttam, and Bird, Jonathan P. Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors. United States: N. p., 2018.
Web. doi:10.1021/acsnano.8b08260.
Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C., Dowben, Peter A., Sinitskii, Alexander, Singisetti, Uttam, & Bird, Jonathan P. Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors. United States. https://doi.org/10.1021/acsnano.8b08260
Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C., Dowben, Peter A., Sinitskii, Alexander, Singisetti, Uttam, and Bird, Jonathan P. Wed .
"Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors". United States. https://doi.org/10.1021/acsnano.8b08260. https://www.osti.gov/servlets/purl/1593702.
@article{osti_1593702,
title = {Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors},
author = {Randle, Michael and Lipatov, Alexey and Kumar, Avinash and Kwan, Chun-Pui and Nathawat, Jubin and Barut, Bilal and Yin, Shenchu and He, Keke and Arabchigavkani, Nargess and Dixit, Ripudaman and Komesu, Takeshi and Avila, José and Asensio, Maria C. and Dowben, Peter A. and Sinitskii, Alexander and Singisetti, Uttam and Bird, Jonathan P.},
abstractNote = {We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal–insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ~20–30 cm2/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (<~220 K), the transfer curves exhibit unusual mesoscopic fluctuations and a current suppression near zero bias that is common to charge-density wave (CDW) systems. The fluctuations have a nonmonotonic temperature dependence and wash out at a temperature close to that of the bulk MIT, suggesting they may be a feature of quantum interference in the CDW state. Overall, our results demonstrate that quasi-1D TiS3 nanostructures represent a viable candidate for FET realization and that their functionality is influenced by complex phenomena.},
doi = {10.1021/acsnano.8b08260},
journal = {ACS Nano},
number = 1,
volume = 13,
place = {United States},
year = {Wed Dec 26 00:00:00 EST 2018},
month = {Wed Dec 26 00:00:00 EST 2018}
}
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