Mini volume collapse as evidence for a three-body magnetic polaron in
- Univ. of California, Santa Cruz, CA (United States)
- Florida A & M University, Tallahassee, FL (United States); Florida State Univ., Tallahassee, FL (United States). FAMU-FSU College of Engineering; Missouri State Univ., Springfield, MO (United States)
- National High Magnetic Field Lab., Tallahassee, FL (United States)
- International Solar Energy Research Center Konstanz, Konstanz (Germany)
- Florida A & M University, Tallahassee, FL (United States); Florida State Univ., Tallahassee, FL (United States). FAMU-FSU College of Engineering; National High Magnetic Field Lab., Tallahassee, FL (United States)
Samarium sulfide (SmS) is a nonmagnetic narrow-gap (0.06 eV) semiconductor that undergoes a transition to a metallic intermediate valence state at 6.5 kbar. Europium sulfide (EuS) is a ferromagnetic semiconductor with a Curie temperature of 16 K and a gap of 1.6 eV. Here we present a study of the lattice constant, magnetic susceptibility, and resistivity of the substitution series Sm1-x Eux S for 0 < x < 1. We observe a smooth interpolation of magnetic and transport behavior across the series, consistent with a virtual crystal scenario and Vegard’s law. Surprisingly, however, the lattice constant deviates below Vegard’s law in a manner that suggests parametric control of the Sm-Sm distance by the Eu moment in the manner of a magnetic polaron.
- Research Organization:
- Univ. of California, Santa Cruz, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Grant/Contract Number:
- SC0017862
- OSTI ID:
- 1593395
- Report Number(s):
- 2; PRMHAR; TRN: US2101451
- Journal Information:
- Physical Review Materials, Vol. 3, Issue 10; ISSN 2475-9953
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Out-of-plane magnetic anisotropy enhancement in thin films
Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor