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Title: Growth of high-quality Bi 2Se 3 topological insulators using (Bi 1-xIn x) 2Se 3 buffer layers

Abstract

Here, the authors first report on the optimum growth parameters for Bi 1-xIn x) 2Se 3 alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth, single-phase films can only be obtained by using a sequential growth and annealing method to seed the film, after which normal codeposition growth can be used. The topological insulator Bi 2Se 3 is then grown on top of various (Bi 1-xIn x) 2Se 3 buffers and the electrical properties measured. For Bi 2Se 3 films grown on high-quality buffer layers, the mobility is greatly enhanced and the carrier density reduced compared to growth directly on sapphire substrates, indicating a significant improvement in film quality. The use of an almost lattice-matched trivially insulating buffer layer is therefore vital to the growth of high-quality topological insulators on arbitrary substrates.

Authors:
 [1];  [1];  [1]
  1. Univ. of Delaware, Newark, DE (United States)
Publication Date:
Research Org.:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1593345
Alternate Identifier(s):
OSTI ID: 1418715
Grant/Contract Number:  
SC0017801; SC0016380
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology B
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society / AIP
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Yong, Ginley, Theresa P., and Law, Stephanie. Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers. United States: N. p., 2018. Web. doi:10.1116/1.5015968.
Wang, Yong, Ginley, Theresa P., & Law, Stephanie. Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers. United States. doi:10.1116/1.5015968.
Wang, Yong, Ginley, Theresa P., and Law, Stephanie. Tue . "Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers". United States. doi:10.1116/1.5015968. https://www.osti.gov/servlets/purl/1593345.
@article{osti_1593345,
title = {Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers},
author = {Wang, Yong and Ginley, Theresa P. and Law, Stephanie},
abstractNote = {Here, the authors first report on the optimum growth parameters for Bi1-xInx) 2Se3 alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth, single-phase films can only be obtained by using a sequential growth and annealing method to seed the film, after which normal codeposition growth can be used. The topological insulator Bi2Se3 is then grown on top of various (Bi1-xInx) 2Se3 buffers and the electrical properties measured. For Bi2Se3 films grown on high-quality buffer layers, the mobility is greatly enhanced and the carrier density reduced compared to growth directly on sapphire substrates, indicating a significant improvement in film quality. The use of an almost lattice-matched trivially insulating buffer layer is therefore vital to the growth of high-quality topological insulators on arbitrary substrates.},
doi = {10.1116/1.5015968},
journal = {Journal of Vacuum Science and Technology B},
number = 2,
volume = 36,
place = {United States},
year = {2018},
month = {1}
}

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