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Title: Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Abstract

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and VN-complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating VN and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 1019 cm-3. All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [2]; ORCiD logo [2];  [2]; ORCiD logo [3];  [1]
+ Show Author Affiliations
  1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
  2. Adroit Materials, Inc., Cary, NC (United States)
  3. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering; Adroit Materials, Inc., Cary, NC (United States)
Publication Date:
Research Org.:
HexaTech, Raleigh, NC (United States); Adroit Materials, Cary, NC (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Engineering & Technology. Office of Small Business Innovation Research (SBIR) and Small Business Technology Transfer (STTR) Programs
OSTI Identifier:
1798992
Alternate Identifier(s):
OSTI ID: 1593195
Grant/Contract Number:  
AR0000299; SC0011883
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 127; Journal Issue: 4; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Klump, A., Hoffmann, M. P., Kaess, F., Tweedie, J., Reddy, P., Kirste, R., Sitar, Z., and Collazo, R. Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control. United States: N. p., 2020. Web. doi:10.1063/1.5126004.
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Klump, A., Hoffmann, M. P., Kaess, F., Tweedie, J., Reddy, P., Kirste, R., Sitar, Z., & Collazo, R. Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control. United States. https://doi.org/10.1063/1.5126004
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Klump, A., Hoffmann, M. P., Kaess, F., Tweedie, J., Reddy, P., Kirste, R., Sitar, Z., and Collazo, R. Wed . "Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control". United States. https://doi.org/10.1063/1.5126004. https://www.osti.gov/servlets/purl/1798992.
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@article{osti_1798992,
title = {Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control},
author = {Klump, A. and Hoffmann, M. P. and Kaess, F. and Tweedie, J. and Reddy, P. and Kirste, R. and Sitar, Z. and Collazo, R.},
abstractNote = {A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and VN-complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating VN and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 1019 cm-3. All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.},
doi = {10.1063/1.5126004},
journal = {Journal of Applied Physics},
number = 4,
volume = 127,
place = {United States},
year = {Wed Jan 22 00:00:00 EST 2020},
month = {Wed Jan 22 00:00:00 EST 2020}
}
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https://doi.org/10.1063/1.5126004
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Works referenced in this record:

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
journal, December 2012

  • Bryan, Zachary; Hoffmann, Marc; Tweedie, James
  • Journal of Electronic Materials, Vol. 42, Issue 5
  • DOI: 10.1007/s11664-012-2342-9

Defect quasi Fermi level control-based C N reduction in GaN: Evidence for the role of minority carriers
journal, October 2017

  • Reddy, Pramod; Kaess, Felix; Tweedie, James
  • Applied Physics Letters, Vol. 111, Issue 15
  • DOI: 10.1063/1.5000720

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
journal, November 2016

  • Reddy, P.; Hoffmann, M. P.; Kaess, F.
  • Journal of Applied Physics, Vol. 120, Issue 18
  • DOI: 10.1063/1.4967397

First-principles calculations for defects and impurities: Applications to III-nitrides
journal, April 2004

  • Van de Walle, Chris G.; Neugebauer, Jörg
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1682673

Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes
journal, May 2011

  • Castiglia, A.; Carlin, J. -F.; Grandjean, N.
  • Applied Physics Letters, Vol. 98, Issue 21
  • DOI: 10.1063/1.3593964

Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992

  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B
  • DOI: 10.1143/JJAP.31.L139

Impact of gallium supersaturation on the growth of N-polar GaN
journal, June 2011

  • Mita, Seiji; Collazo, Ramón; Rice, Anthony
  • physica status solidi (c), Vol. 8, Issue 7-8
  • DOI: 10.1002/pssc.201001063

Gallium vacancies and the yellow luminescence in GaN
journal, July 1996

  • Neugebauer, Jörg; Van de Walle, Chris G.
  • Applied Physics Letters, Vol. 69, Issue 4
  • DOI: 10.1063/1.117767

Effect of p -type activation ambient on acceptor levels in Mg-doped GaN
journal, July 2004

  • Nakano, Yoshitaka; Fujishima, Osamu; Kachi, Tetsu
  • Journal of Applied Physics, Vol. 96, Issue 1
  • DOI: 10.1063/1.1755856

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
journal, January 1996

  • Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi
  • Japanese Journal of Applied Physics, Vol. 35, Issue Part 2, No. 1B, p. L74-L76
  • DOI: 10.1143/JJAP.35.L74

Local vibrational modes of the Mg–H acceptor complex in GaN
journal, December 1996

  • Götz, W.; Johnson, N. M.; Bour, D. P.
  • Applied Physics Letters, Vol. 69, Issue 24
  • DOI: 10.1063/1.117202

Self-compensation in Mg doped p-type GaN grown by MOCVD
journal, December 1998

The effect of illumination power density on carbon defect configuration in silicon doped GaN
journal, December 2016

  • Kaess, Felix; Reddy, Pramod; Alden, Dorian
  • Journal of Applied Physics, Vol. 120, Issue 23
  • DOI: 10.1063/1.4972468

Influence of Dopants on Defect Formation in GaN
journal, November 2001

Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
journal, August 1998

  • Kamiura, Yoichi; Yamashita, Yoshifumi; Nakamura, Shuji
  • Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 8B
  • DOI: 10.1143/JJAP.37.L970

Ge doped GaN with controllable high carrier concentration for plasmonic applications
journal, December 2013

  • Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward
  • Applied Physics Letters, Vol. 103, Issue 24
  • DOI: 10.1063/1.4848555

Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
journal, February 2013

Advances in group III-nitride-based deep UV light-emitting diode technology
journal, December 2010

Investigation of the formation of the 2.8 eV luminescence band in p -type GaN:Mg
journal, May 2000

  • Shahedipour, F.; Wessels, B. W.
  • Applied Physics Letters, Vol. 76, Issue 21
  • DOI: 10.1063/1.126562

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
journal, December 2014

  • Bryan, Zachary; Bryan, Isaac; Gaddy, Benjamin E.
  • Applied Physics Letters, Vol. 105, Issue 22
  • DOI: 10.1063/1.4903058

Carbon impurities and the yellow luminescence in GaN
journal, October 2010

  • Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
  • Applied Physics Letters, Vol. 97, Issue 15
  • DOI: 10.1063/1.3492841

Dissociation of H-related defect complexes in Mg-doped GaN
journal, March 2004

Hydrogen Dissociation from Mg-doped GaN
journal, January 2004

  • Nakagawa, Yoshinori; Haraguchi, Masanobu; Fukui, Masuo
  • Japanese Journal of Applied Physics, Vol. 43, Issue 1
  • DOI: 10.1143/JJAP.43.23

Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride
journal, December 1999

Nature of the 2.8 eV photoluminescence band in Mg doped GaN
journal, March 1998

  • Kaufmann, U.; Kunzer, M.; Maier, M.
  • Applied Physics Letters, Vol. 72, Issue 11
  • DOI: 10.1063/1.120983

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
journal, January 1991

Fermi energy tuning with light to control doping profiles during epitaxy
journal, May 2015

  • Sanders, C. E.; Beaton, D. A.; Reedy, R. C.
  • Applied Physics Letters, Vol. 106, Issue 18
  • DOI: 10.1063/1.4921047

Point defect management in GaN by Fermi-level control during growth
conference, March 2014

  • Hoffmann, Marc P.; Tweedie, James; Kirste, Ronny
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.2041018

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
journal, March 2013

  • Kirste, Ronny; Hoffmann, Marc P.; Tweedie, James
  • Journal of Applied Physics, Vol. 113, Issue 10
  • DOI: 10.1063/1.4794094

On Ni/Au Alloyed Contacts to Mg-Doped GaN
journal, September 2017

  • Sarkar, Biplab; Reddy, Pramod; Klump, Andrew
  • Journal of Electronic Materials, Vol. 47, Issue 1
  • DOI: 10.1007/s11664-017-5775-3

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
journal, May 2018

  • Chichibu, S. F.; Shima, K.; Kojima, K.
  • Applied Physics Letters, Vol. 112, Issue 21
  • DOI: 10.1063/1.5030645

Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
journal, January 1996

  • Götz, W.; Johnson, N. M.; Walker, J.
  • Applied Physics Letters, Vol. 68, Issue 5
  • DOI: 10.1063/1.116503

High free carrier concentration in p-GaN grown on AlN substrates
journal, July 2017

  • Sarkar, Biplab; Mita, Seiji; Reddy, Pramod
  • Applied Physics Letters, Vol. 111, Issue 3
  • DOI: 10.1063/1.4995239

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
journal, December 1989

  • Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa
  • Japanese Journal of Applied Physics, Vol. 28, Issue Part 2, No. 12
  • DOI: 10.1143/JJAP.28.L2112

Optical signature of Mg-doped GaN: Transfer processes
journal, August 2012

Hole conductivity and compensation in epitaxial GaN:Mg layers
journal, October 2000

Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
journal, May 1999

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