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Title: Tunneling electroresistance effects in epitaxial complex oxides on silicon

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [2]; ORCiD logo [4]
  1. Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, USA
  2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
  3. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
  4. Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1593182
Grant/Contract Number:  
BES; AC02- 06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 116 Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tunneling electroresistance effects in epitaxial complex oxides on silicon. United States: N. p., 2020. Web. doi:10.1063/1.5133081.
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, & Bakaul, Saidur Rahman. Tunneling electroresistance effects in epitaxial complex oxides on silicon. United States. doi:10.1063/1.5133081.
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tue . "Tunneling electroresistance effects in epitaxial complex oxides on silicon". United States. doi:10.1063/1.5133081.
@article{osti_1593182,
title = {Tunneling electroresistance effects in epitaxial complex oxides on silicon},
author = {Abuwasib, Mohammad and Serrao, Claudy R. and Stan, Liliana and Salahuddin, Sayeef and Bakaul, Saidur Rahman},
abstractNote = {},
doi = {10.1063/1.5133081},
journal = {Applied Physics Letters},
number = 3,
volume = 116,
place = {United States},
year = {2020},
month = {1}
}

Journal Article:
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This content will become publicly available on January 22, 2021
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Works referenced in this record:

Creating emergent phenomena in oxide superlattices
journal, March 2019


Tunneling electroresistance in multiferroic heterostructures
journal, November 2014


Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors
journal, February 2005

  • Dehoff, C.; Rodriguez, B. J.; Kingon, A. I.
  • Review of Scientific Instruments, Vol. 76, Issue 2
  • DOI: 10.1063/1.1850652

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions
journal, April 2016

  • Abuwasib, Mohammad; Lu, Haidong; Li, Tao
  • Applied Physics Letters, Vol. 108, Issue 15
  • DOI: 10.1063/1.4947020

Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions
journal, February 2017

  • Guo, Rui; Wang, Ying; Yoong, Herng Yau
  • ACS Applied Materials & Interfaces, Vol. 9, Issue 6
  • DOI: 10.1021/acsami.6b15564

Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
journal, July 2017


Effects of ferroelectric dead layer on the electron transport in ferroelectric tunneling junctions
journal, August 2011

  • Sun, Ping; Wu, Yin-Zhong; Cai, Tian-Yi
  • Applied Physics Letters, Vol. 99, Issue 5
  • DOI: 10.1063/1.3619841

Advances in magnetoelectric multiferroics
journal, February 2019


Effect of Ferroelectricity on Electron Transport in Pt / BaTiO 3 / Pt Tunnel Junctions
journal, March 2007


Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier
journal, August 2009

  • Zhuravlev, M. Ye.; Wang, Y.; Maekawa, S.
  • Applied Physics Letters, Vol. 95, Issue 5
  • DOI: 10.1063/1.3195075

Metal-insulator transitions
journal, October 1998

  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039

The evolution of multiferroics
journal, July 2016


Functional ferroelectric tunnel junctions on silicon
journal, July 2015

  • Guo, Rui; Wang, Zhe; Zeng, Shengwei
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep12576

An Epitaxial Ferroelectric Tunnel Junction on Silicon
journal, September 2014


Thin-film ferroelectric materials and their applications
journal, November 2016


Towards Oxide Electronics: a Roadmap
journal, July 2019


Interface-induced phenomena in polarization response of ferroelectric thin films
journal, September 2006

  • Tagantsev, A. K.; Gerra, G.
  • Journal of Applied Physics, Vol. 100, Issue 5
  • DOI: 10.1063/1.2337009

Structure, physical properties, and applications of SrRuO 3 thin films
journal, March 2012


Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr 0.2 Ti 0.8 )O 3 barriers
journal, June 2012

  • Pantel, Daniel; Lu, Haidong; Goetze, Silvana
  • Applied Physics Letters, Vol. 100, Issue 23
  • DOI: 10.1063/1.4726120

Voltage shift phenomena in a heteroepitaxial BaTiO[sub 3] thin film capacitor
journal, January 2002

  • Abe, K.; Yanase, N.; Yasumoto, T.
  • Journal of Applied Physics, Vol. 91, Issue 1
  • DOI: 10.1063/1.1426249

Giant Electroresistance in Ferroelectric Tunnel Junctions
journal, June 2005


Interface Effect on Ferroelectricity at the Nanoscale
journal, March 2006

  • Duan, Chun-Gang; Sabirianov, Renat F.; Mei, Wai-Ning
  • Nano Letters, Vol. 6, Issue 3
  • DOI: 10.1021/nl052452l

Contact resistance to SrRuO 3 and La 0.67 Sr 0.33 MnO 3 epitaxial films
journal, December 2015

  • Abuwasib, Mohammad; Lee, Hyungwoo; Gruverman, Alexei
  • Applied Physics Letters, Vol. 107, Issue 24
  • DOI: 10.1063/1.4938143

Physics of thin-film ferroelectric oxides
journal, October 2005


Solid-state memories based on ferroelectric tunnel junctions
journal, December 2011

  • Chanthbouala, André; Crassous, Arnaud; Garcia, Vincent
  • Nature Nanotechnology, Vol. 7, Issue 2
  • DOI: 10.1038/nnano.2011.213

Pinned interface dipole-induced tunneling electroresistance in ferroelectric tunnel junctions: A theoretical investigation
journal, September 2012


Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 -Based Films
journal, February 2015

  • Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon
  • Advanced Materials, Vol. 27, Issue 11
  • DOI: 10.1002/adma.201404531

Ferroelectricity in hafnium oxide thin films
journal, September 2011

  • Böscke, T. S.; Müller, J.; Bräuhaus, D.
  • Applied Physics Letters, Vol. 99, Issue 10
  • DOI: 10.1063/1.3634052

Single crystal functional oxides on silicon
journal, February 2016

  • Bakaul, Saidur Rahman; Serrao, Claudy Rayan; Lee, Michelle
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10547

Ferroelectric tunnel junctions for information storage and processing
journal, July 2014

  • Garcia, Vincent; Bibes, Manuel
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5289

Reversible electrical switching of spin polarization in multiferroic tunnel junctions
journal, February 2012

  • Pantel, D.; Goetze, S.; Hesse, D.
  • Nature Materials, Vol. 11, Issue 4
  • DOI: 10.1038/nmat3254