Understanding chemical and physical mechanisms in atomic layer deposition
Abstract
Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from “ideal” film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.
- Publication Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1801604
- Alternate Identifier(s):
- OSTI ID: 1593180
- Grant/Contract Number:
- SC0004782
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Chemical Physics
- Additional Journal Information:
- Journal Volume: 152; Journal Issue: 4; Journal ID: ISSN 0021-9606
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; chemistry; physics
Citation Formats
Richey, Nathaniel E., de Paula, Camila, and Bent, Stacey F. Understanding chemical and physical mechanisms in atomic layer deposition. United States: N. p., 2020.
Web. doi:10.1063/1.5133390.
Richey, Nathaniel E., de Paula, Camila, & Bent, Stacey F. Understanding chemical and physical mechanisms in atomic layer deposition. United States. https://doi.org/10.1063/1.5133390
Richey, Nathaniel E., de Paula, Camila, and Bent, Stacey F. Wed .
"Understanding chemical and physical mechanisms in atomic layer deposition". United States. https://doi.org/10.1063/1.5133390. https://www.osti.gov/servlets/purl/1801604.
@article{osti_1801604,
title = {Understanding chemical and physical mechanisms in atomic layer deposition},
author = {Richey, Nathaniel E. and de Paula, Camila and Bent, Stacey F.},
abstractNote = {Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from “ideal” film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.},
doi = {10.1063/1.5133390},
journal = {Journal of Chemical Physics},
number = 4,
volume = 152,
place = {United States},
year = {Wed Jan 22 00:00:00 EST 2020},
month = {Wed Jan 22 00:00:00 EST 2020}
}
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