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Title: Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Abstract

In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surface Fermi level are independent of the alloy composition as electronic bands diverge with the increase in the bandgap as a function of alloy composition. The invariance of localized states on the alloy composition creates a convenient internal reference energy with respect to which other energy states may be measured. We demonstrate a higher generality to the universality rule with the independence of deep transition states of otherwise shallow donor type defects [(+1/+3) transition for VN] and defect complexes (CN+SiIII) in addition to the earlier predicted independent nature of mid-gap states when they are either the antibonding state between cationic impurities and host anion or acceptors at anion sites.

Authors:
ORCiD logo [1];  [2];  [3];  [2]; ORCiD logo [2];  [1];  [1];  [1];  [2]; ORCiD logo [4];  [3]
+ Show Author Affiliations
  1. Adroit Materials, Inc., Cary, NC (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
  4. Adroit Materials, Inc., Cary, NC (United States); North Carolina State Univ., Raleigh, NC (United States)
Publication Date:
Research Org.:
Adroit Materials, Cary, NC (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1802282
Alternate Identifier(s):
OSTI ID: 1593176
Grant/Contract Number:  
SC0011883
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Physics; Crystallographic defects; Photoluminescence spectroscopy; Stokes shift; Condensed matter electronic structure; Localized states; Semiconductors; Density functional theory; Electronic band structure

Citation Formats

Reddy, Pramod, Bryan, Zachary, Bryan, Isaac, Kim, Ji Hyun, Washiyama, Shun, Kirste, Ronny, Mita, Seiji, Tweedie, James, Irving, Douglas L., Sitar, Zlatko, and Collazo, Ramón. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys. United States: N. p., 2020. Web. doi:10.1063/1.5140995.
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Reddy, Pramod, Bryan, Zachary, Bryan, Isaac, Kim, Ji Hyun, Washiyama, Shun, Kirste, Ronny, Mita, Seiji, Tweedie, James, Irving, Douglas L., Sitar, Zlatko, & Collazo, Ramón. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys. United States. https://doi.org/10.1063/1.5140995
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Reddy, Pramod, Bryan, Zachary, Bryan, Isaac, Kim, Ji Hyun, Washiyama, Shun, Kirste, Ronny, Mita, Seiji, Tweedie, James, Irving, Douglas L., Sitar, Zlatko, and Collazo, Ramón. Tue . "Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys". United States. https://doi.org/10.1063/1.5140995. https://www.osti.gov/servlets/purl/1802282.
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@article{osti_1802282,
title = {Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys},
author = {Reddy, Pramod and Bryan, Zachary and Bryan, Isaac and Kim, Ji Hyun and Washiyama, Shun and Kirste, Ronny and Mita, Seiji and Tweedie, James and Irving, Douglas L. and Sitar, Zlatko and Collazo, Ramón},
abstractNote = {In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surface Fermi level are independent of the alloy composition as electronic bands diverge with the increase in the bandgap as a function of alloy composition. The invariance of localized states on the alloy composition creates a convenient internal reference energy with respect to which other energy states may be measured. We demonstrate a higher generality to the universality rule with the independence of deep transition states of otherwise shallow donor type defects [(+1/+3) transition for VN] and defect complexes (CN+SiIII) in addition to the earlier predicted independent nature of mid-gap states when they are either the antibonding state between cationic impurities and host anion or acceptors at anion sites.},
doi = {10.1063/1.5140995},
journal = {Applied Physics Letters},
number = 3,
volume = 116,
place = {United States},
year = {Tue Jan 21 00:00:00 EST 2020},
month = {Tue Jan 21 00:00:00 EST 2020}
}
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https://doi.org/10.1063/1.5140995
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