Gate field effects on the topological insulator BiSbTeSe 2 interface

doi:10.1063/1.5127065

Title: Gate field effects on the topological insulator BiSbTeSe ₂ interface

Authors:

^[1]; Xu, Yang ^[2];

^[1]; Chen, Yong P. ^[3];

^[4];

^[5]

Department of Physics, University of Florida, Gainesville, Florida 32611, USA, Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA
Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA, Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA
Department of Physics, University of Florida, Gainesville, Florida 32611, USA
Department of Physics, University of Florida, Gainesville, Florida 32611, USA, Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA, Center for Molecular Magnetic Quantum Materials, University of Florida, Gainesville, Florida 32611, USA

Publication Date:: 2020-01-21

Sponsoring Org.:: USDOE

OSTI Identifier:: 1593175

Grant/Contract Number:: FG02-02ER45995

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 116 Journal Issue: 3; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., and Cheng, Hai-Ping. Gate field effects on the topological insulator BiSbTeSe 2 interface.  United States: N. p., 2020. 
        Web.  doi:10.1063/1.5127065.

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                    Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., & Cheng, Hai-Ping. Gate field effects on the topological insulator BiSbTeSe 2 interface.  United States.  doi:10.1063/1.5127065.

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                    Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., and Cheng, Hai-Ping. Tue .  
        "Gate field effects on the topological insulator BiSbTeSe 2 interface".  United States.  doi:10.1063/1.5127065.

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@article{osti_1593175,

  title        = {Gate field effects on the topological insulator BiSbTeSe 2 interface},

  author       = {Liu, Shuanglong and Xu, Yang and Wang, Yun-Peng and Chen, Yong P. and Fry, James N. and Cheng, Hai-Ping},

  abstractNote = {},

  doi          = {10.1063/1.5127065},

  journal      = {Applied Physics Letters},

  number       = 3,

  volume       = 116,

  place        = {United States},

  year         = {2020},

  month        = {1}

}

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DOI: 10.1063/1.5127065

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Title: Gate field effects on the topological insulator BiSbTeSe 2 interface

Citation Formats

Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator–Magnetic-Topological-Insulator Interface journal, August 2015

Observation of Dirac Holes and Electrons in a Topological Insulator journal, June 2011

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VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data journal, October 2011

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Inhomogeneous Electron Gas journal, November 1964

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Title: Gate field effects on the topological insulator BiSbTeSe ₂ interface

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Observation of Dirac Holes and Electrons in a Topological Insulator
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Persistent Topological Surface State at the Interface of Bi ₂ Se ₃ Film Grown on Patterned Graphene
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Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator
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Ab initiomolecular dynamics for liquid metals
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journal, May 2016

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