Gate field effects on the topological insulator BiSbTeSe 2 interface
- Authors:
-
- Department of Physics, University of Florida, Gainesville, Florida 32611, USA, Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA, Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA
- Department of Physics, University of Florida, Gainesville, Florida 32611, USA
- Department of Physics, University of Florida, Gainesville, Florida 32611, USA, Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA, Center for Molecular Magnetic Quantum Materials, University of Florida, Gainesville, Florida 32611, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1593175
- Grant/Contract Number:
- FG02-02ER45995
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 116 Journal Issue: 3; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., and Cheng, Hai-Ping. Gate field effects on the topological insulator BiSbTeSe 2 interface. United States: N. p., 2020.
Web. doi:10.1063/1.5127065.
Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., & Cheng, Hai-Ping. Gate field effects on the topological insulator BiSbTeSe 2 interface. United States. doi:10.1063/1.5127065.
Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., and Cheng, Hai-Ping. Tue .
"Gate field effects on the topological insulator BiSbTeSe 2 interface". United States. doi:10.1063/1.5127065.
@article{osti_1593175,
title = {Gate field effects on the topological insulator BiSbTeSe 2 interface},
author = {Liu, Shuanglong and Xu, Yang and Wang, Yun-Peng and Chen, Yong P. and Fry, James N. and Cheng, Hai-Ping},
abstractNote = {},
doi = {10.1063/1.5127065},
journal = {Applied Physics Letters},
number = 3,
volume = 116,
place = {United States},
year = {2020},
month = {1}
}
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DOI: 10.1063/1.5127065
DOI: 10.1063/1.5127065
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