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Title: Gate field effects on the topological insulator BiSbTeSe 2 interface

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [3]; ORCiD logo [4]; ORCiD logo [5]
  1. Department of Physics, University of Florida, Gainesville, Florida 32611, USA, Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
  2. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA
  3. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA, Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA
  4. Department of Physics, University of Florida, Gainesville, Florida 32611, USA
  5. Department of Physics, University of Florida, Gainesville, Florida 32611, USA, Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA, Center for Molecular Magnetic Quantum Materials, University of Florida, Gainesville, Florida 32611, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1593175
Grant/Contract Number:  
FG02-02ER45995
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 116 Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., and Cheng, Hai-Ping. Gate field effects on the topological insulator BiSbTeSe 2 interface. United States: N. p., 2020. Web. doi:10.1063/1.5127065.
Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., & Cheng, Hai-Ping. Gate field effects on the topological insulator BiSbTeSe 2 interface. United States. doi:10.1063/1.5127065.
Liu, Shuanglong, Xu, Yang, Wang, Yun-Peng, Chen, Yong P., Fry, James N., and Cheng, Hai-Ping. Tue . "Gate field effects on the topological insulator BiSbTeSe 2 interface". United States. doi:10.1063/1.5127065.
@article{osti_1593175,
title = {Gate field effects on the topological insulator BiSbTeSe 2 interface},
author = {Liu, Shuanglong and Xu, Yang and Wang, Yun-Peng and Chen, Yong P. and Fry, James N. and Cheng, Hai-Ping},
abstractNote = {},
doi = {10.1063/1.5127065},
journal = {Applied Physics Letters},
number = 3,
volume = 116,
place = {United States},
year = {2020},
month = {1}
}

Journal Article:
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This content will become publicly available on January 22, 2021
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