Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

Feifel, Markus; Ohlmann, Jens; France, Ryan M.; Lackner, David; Dimroth, Frank

doi:10.1016/j.jcrysgro.2019.125422

Title: Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

Journal Article · 12 December 2019 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2019.125422 · OSTI ID:1592087

^[1];

^[2]; Lackner, David ^[1]; Dimroth, Frank ^[1]

Fraunhofer Inst. for Solar Energy Systems Freiburg (Germany)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI). Stacking fault pyramids at a density of up to 6 x 10⁷ cm^-2 were identified in the GaP nucleation layer by varying the diffraction conditions. We show that these defects originate at the GaP/Si interface and propagate on all four {1 1 1} planes. We observed that such stacking fault pyramids interact with the gliding of misfit dislocations during lattice-mismatched growth and enhance the threading dislocation density. The initial pulsing of TEGa and TBP during the nucleation of GaP on Silicon has been found to strongly influence the formation of those pyramidal defects. Changing the number of pulse cycles allowed us to lower their density by two orders of magnitude from 6 x 10⁷ cm^-2 to 4 x 10⁵ cm^-2.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1592087

Alternate ID(s):: OSTI ID: 1579469

Report Number(s):: NREL/JA-5900-74351; TRN: US2102028

Journal Information:: Journal of Crystal Growth, Vol. 532, Issue C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Title: Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

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