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Title: Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

Abstract

Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI). Stacking fault pyramids at a density of up to 6 x 107 cm-2 were identified in the GaP nucleation layer by varying the diffraction conditions. We show that these defects originate at the GaP/Si interface and propagate on all four {1 1 1} planes. We observed that such stacking fault pyramids interact with the gliding of misfit dislocations during lattice-mismatched growth and enhance the threading dislocation density. The initial pulsing of TEGa and TBP during the nucleation of GaP on Silicon has been found to strongly influence the formation of those pyramidal defects. Changing the number of pulse cycles allowed us to lower their density by two orders of magnitude from 6 x 107 cm-2 to 4 x 105 cm-2.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [1];  [1]
  1. Fraunhofer Inst. for Solar Energy Systems Freiburg (Germany)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1592087
Alternate Identifier(s):
OSTI ID: 1579469
Report Number(s):
NREL/JA-5900-74351
Journal ID: ISSN 0022-0248; TRN: US2102028
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 532; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; defects; nucleation; metalorganic vapor phase epitaxy; flow modulated epitaxy; semiconducting III-V materials

Citation Formats

Feifel, Markus, Ohlmann, Jens, France, Ryan M., Lackner, David, and Dimroth, Frank. Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers. United States: N. p., 2019. Web. https://doi.org/10.1016/j.jcrysgro.2019.125422.
Feifel, Markus, Ohlmann, Jens, France, Ryan M., Lackner, David, & Dimroth, Frank. Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers. United States. https://doi.org/10.1016/j.jcrysgro.2019.125422
Feifel, Markus, Ohlmann, Jens, France, Ryan M., Lackner, David, and Dimroth, Frank. Thu . "Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers". United States. https://doi.org/10.1016/j.jcrysgro.2019.125422. https://www.osti.gov/servlets/purl/1592087.
@article{osti_1592087,
title = {Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers},
author = {Feifel, Markus and Ohlmann, Jens and France, Ryan M. and Lackner, David and Dimroth, Frank},
abstractNote = {Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI). Stacking fault pyramids at a density of up to 6 x 107 cm-2 were identified in the GaP nucleation layer by varying the diffraction conditions. We show that these defects originate at the GaP/Si interface and propagate on all four {1 1 1} planes. We observed that such stacking fault pyramids interact with the gliding of misfit dislocations during lattice-mismatched growth and enhance the threading dislocation density. The initial pulsing of TEGa and TBP during the nucleation of GaP on Silicon has been found to strongly influence the formation of those pyramidal defects. Changing the number of pulse cycles allowed us to lower their density by two orders of magnitude from 6 x 107 cm-2 to 4 x 105 cm-2.},
doi = {10.1016/j.jcrysgro.2019.125422},
journal = {Journal of Crystal Growth},
number = C,
volume = 532,
place = {United States},
year = {2019},
month = {12}
}

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