Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers

Journal Article · 26 March 2019 · Physica Status Solidi. A, Applications and Materials Science

DOI: https://doi.org/10.1002/pssa.201800887 · OSTI ID:1592014

Sankin, Igor  ^[1]; Krasikov, Dmitry ^[1]

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1. First Solar, Inc., Perrysburg, OH (United States)

This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.

• Research Organization: Arizona State Univ., Tempe, AZ (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• Grant/Contract Number: EE0007536; EE0006344
• OSTI ID: 1592014
• Alternate ID(s): OSTI ID: 1503064
• Journal Information: Physica Status Solidi. A, Applications and Materials Science, Vol. 216, Issue 15; ISSN 1862-6300
• Publisher: WileyCopyright Statement
• Country of Publication: United States
• Language: English