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Title: Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers

Abstract

This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.

Authors:
ORCiD logo [1];  [1]
  1. First Solar, Inc., Perrysburg, OH (United States)
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1592014
Alternate Identifier(s):
OSTI ID: 1503064
Grant/Contract Number:  
EE0007536; EE0006344
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 216; Journal Issue: 15; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; Cu doping; CdTe; Solar Cells; Absorbers; defect chemistry; kinetic simulations; thin‐film photovoltaics

Citation Formats

Sankin, Igor, and Krasikov, Dmitry. Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers. United States: N. p., 2019. Web. doi:10.1002/pssa.201800887.
Sankin, Igor, & Krasikov, Dmitry. Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers. United States. doi:10.1002/pssa.201800887.
Sankin, Igor, and Krasikov, Dmitry. Tue . "Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers". United States. doi:10.1002/pssa.201800887.
@article{osti_1592014,
title = {Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers},
author = {Sankin, Igor and Krasikov, Dmitry},
abstractNote = {This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.},
doi = {10.1002/pssa.201800887},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 15,
volume = 216,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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This content will become publicly available on March 26, 2020
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