Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2

Lei, Bing-Hua; Fu, Yuhao; Feng, Zhenzhen; Singh, David J.

doi:10.1103/PhysRevB.101.020404

Title: Quantum critical point and ferromagnetic semiconducting behavior in $p$ -type ${FeAs}_{2}$

Journal Article · 14 January 2020 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.101.020404 · OSTI ID:1591988

^[1]; Fu, Yuhao ^[1]; Feng, Zhenzhen ^[2];

^[1]

Univ. of Missouri, Columbia, MO (United States)
Univ. of Missouri, Columbia, MO (United States); Henan Univ., Kaifeng (China)

We highlight a method based on itinerant magnetism for finding ferromagnetic semiconductors that can be gate tuned to study quantum critical points. We demonstrate that p-type FeAs₂ is an example. The complex nonparabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.

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Research Organization:: Univ. of Missouri, Columbia, MO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019114

OSTI ID:: 1591988

Journal Information:: Physical Review B, Vol. 101, Issue 2; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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