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Title: Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs 2

Abstract

We highlight a method based on itinerant magnetism for finding ferromagnetic semiconductors that can be gate tuned to study quantum critical points. We demonstrate that p-type FeAs 2 is an example. The complex nonparabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.

Authors:
ORCiD logo [1];  [1];  [2]; ORCiD logo [1]
  1. Univ. of Missouri, Columbia, MO (United States)
  2. Univ. of Missouri, Columbia, MO (United States); Henan Univ., Kaifeng (China)
Publication Date:
Research Org.:
Univ. of Missouri, Columbia, MO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1591988
Grant/Contract Number:  
SC0019114
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 101; Journal Issue: 2; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, and Singh, David J. Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2. United States: N. p., 2020. Web. doi:10.1103/PhysRevB.101.020404.
Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, & Singh, David J. Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2. United States. doi:10.1103/PhysRevB.101.020404.
Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, and Singh, David J. Tue . "Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2". United States. doi:10.1103/PhysRevB.101.020404.
@article{osti_1591988,
title = {Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2},
author = {Lei, Bing-Hua and Fu, Yuhao and Feng, Zhenzhen and Singh, David J.},
abstractNote = {We highlight a method based on itinerant magnetism for finding ferromagnetic semiconductors that can be gate tuned to study quantum critical points. We demonstrate that p-type FeAs2 is an example. The complex nonparabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.},
doi = {10.1103/PhysRevB.101.020404},
journal = {Physical Review B},
number = 2,
volume = 101,
place = {United States},
year = {2020},
month = {1}
}

Journal Article:
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