Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2

doi:10.1103/PhysRevB.101.020404

Title: Quantum critical point and ferromagnetic semiconducting behavior in $p$ -type ${FeAs}_{2}$

Abstract

We highlight a method based on itinerant magnetism for finding ferromagnetic semiconductors that can be gate tuned to study quantum critical points. We demonstrate that p-type FeAs₂ is an example. The complex nonparabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.

Authors:

^[1]; Fu, Yuhao ^[1]; Feng, Zhenzhen ^[2];

^[1]

Univ. of Missouri, Columbia, MO (United States)
Univ. of Missouri, Columbia, MO (United States); Henan Univ., Kaifeng (China)

Publication Date:: 2020-01-14

Research Org.:: Univ. of Missouri, Columbia, MO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1591988

Grant/Contract Number:: SC0019114

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 101; Journal Issue: 2; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, and Singh, David J. Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2.  United States: N. p., 2020. 
        Web.  doi:10.1103/PhysRevB.101.020404.

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                    Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, & Singh, David J. Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2.  United States.  doi:10.1103/PhysRevB.101.020404.

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                    Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, and Singh, David J. Tue .  
        "Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2".  United States.  doi:10.1103/PhysRevB.101.020404.  https://www.osti.gov/servlets/purl/1591988.

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@article{osti_1591988,

  title        = {Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2},

  author       = {Lei, Bing-Hua and Fu, Yuhao and Feng, Zhenzhen and Singh, David J.},

  abstractNote = {We highlight a method based on itinerant magnetism for finding ferromagnetic semiconductors that can be gate tuned to study quantum critical points. We demonstrate that p-type FeAs2 is an example. The complex nonparabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.},

  doi          = {10.1103/PhysRevB.101.020404},

  journal      = {Physical Review B},

  number       = 2,

  volume       = 101,

  place        = {United States},

  year         = {2020},

  month        = {1}

}

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DOI: 10.1103/PhysRevB.101.020404

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Title: Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs 2

Abstract

Citation Formats

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Transport and thermodynamic evidence for a marginal Fermi-liquid state in ZrZn 2 journal, January 2012

75 As NQR studies on FeAs 2 journal, October 2015

MATERIALS SCIENCE: Seeking Room-Temperature Ferromagnetic Semiconductors journal, June 2006

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Title: Quantum critical point and ferromagnetic semiconducting behavior in $p$ -type ${FeAs}_{2}$

Quantum critical phenomena
journal, August 1976

Experimental Identification of Critical Condition for Drastically Enhancing Thermoelectric Power Factor of Two-Dimensional Layered Materials
journal, November 2018

Generalized Gradient Approximation Made Simple
journal, October 1996

Ferromagnetism in the Hubbard models with degenerate single-electron ground states
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journal, April 2014

Growth of Fe and FeAs[sub 2] Films on GaAs by Organo-Metal Chemical Vapor Deposition Using Pentacarbonyl Iron and Arsine
journal, January 1984

Enhanced power factor and reduced Lorenz number in the Wiedemann–Franz law due to pudding mold type band structures
journal, April 2017

Evidence for Strong Itinerant Spin Fluctuations in the Normal State of ${CeFeAsO}_{0.89} F_{0.11}$ Iron-Oxypnictide Superconductors
journal, December 2008

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journal, April 2018

Perspective: n-type oxide thermoelectrics via visual search strategies
journal, February 2016

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journal, January 2015

Unconventional Pairing Originating from the Disconnected Fermi Surfaces of Superconducting ${LaFeAsO}_{1 - x} F_{x}$
journal, August 2008

Structural effects on the calculated semiconductor gap of CrSi 2
journal, January 1991

Density Functional Study of ${LaFeAsO}_{1 - x} F_{x}$ : A Low Carrier Density Superconductor Near Itinerant Magnetism
journal, June 2008

Preparation and properties of FeAs2 and FeSb2
journal, July 1972

Compounds with the Marcasite Type Crystal Structure. II. On the Crystal Structures of the Binary Pnictides.
journal, January 1968

Metamagnetic behavior of fcc iron
journal, December 1987

Ab initiomolecular dynamics for liquid metals
journal, January 1993

BoltzTraP. A code for calculating band-structure dependent quantities
journal, July 2006

Erratum: Electronic fitness function for screening semiconductors as thermoelectric materials [Phys. Rev. Materials 1 , 065405 (2017)]
journal, December 2017

Magnetic Field-Tuned Quantum Criticality in the Metallic Ruthenate Sr3Ru2O7
journal, October 2001

Band structure and itinerant magnetism in quantum critical ${NbFe}_{2}$
journal, January 2010

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First-principles theory of dilute magnetic semiconductors
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Electronic fitness function for screening semiconductors as thermoelectric materials
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