Quantum critical point and ferromagnetic semiconducting behavior in -type
Abstract
We highlight a method based on itinerant magnetism for finding ferromagnetic semiconductors that can be gate tuned to study quantum critical points. We demonstrate that p-type FeAs2 is an example. The complex nonparabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.
- Authors:
-
- Univ. of Missouri, Columbia, MO (United States)
- Univ. of Missouri, Columbia, MO (United States); Henan Univ., Kaifeng (China)
- Publication Date:
- Research Org.:
- Univ. of Missouri, Columbia, MO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1591988
- Grant/Contract Number:
- SC0019114
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 101; Journal Issue: 2; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, and Singh, David J. Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2. United States: N. p., 2020.
Web. doi:10.1103/PhysRevB.101.020404.
Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, & Singh, David J. Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2. United States. https://doi.org/10.1103/PhysRevB.101.020404
Lei, Bing-Hua, Fu, Yuhao, Feng, Zhenzhen, and Singh, David J. Tue .
"Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2". United States. https://doi.org/10.1103/PhysRevB.101.020404. https://www.osti.gov/servlets/purl/1591988.
@article{osti_1591988,
title = {Quantum critical point and ferromagnetic semiconducting behavior in p -type FeAs2},
author = {Lei, Bing-Hua and Fu, Yuhao and Feng, Zhenzhen and Singh, David J.},
abstractNote = {We highlight a method based on itinerant magnetism for finding ferromagnetic semiconductors that can be gate tuned to study quantum critical points. We demonstrate that p-type FeAs2 is an example. The complex nonparabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.},
doi = {10.1103/PhysRevB.101.020404},
journal = {Physical Review B},
number = 2,
volume = 101,
place = {United States},
year = {2020},
month = {1}
}
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