skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on December 13, 2020

Title: Infrared Interlayer Exciton Emission in MoS 2 / WSe 2 Heterostructures

Abstract

Here, we report light emission around 1 eV (1240 nm) from heterostructures of MoS 2 and WSe 2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our results gain access to the interlayer physics of the intrinsically incommensurate MoS 2/WSe 2 heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.

Authors:
 [1];  [2];  [1];  [3];  [4];  [5];  [6];  [6];  [3];  [7]; ORCiD logo [4];  [4]
  1. Stanford Univ., CA (United States). Dept. of Applied Physics
  2. Stanford Univ., CA (United States). Dept. of Electrical Engineering
  3. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany). Dept. Physik
  4. Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
  6. National Inst. for Materials Science (NIMS), Tsukuba (Japan)
  7. Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Chemical Sciences, Geosciences & Biosciences Division; National Science Foundation (NSF)
OSTI Identifier:
1583131
Grant/Contract Number:  
AC02-76-SF00515; GBMF4545; DMR-1708457; ECCS-1542152; JPMJCR15F3; PGSD3-502559-2017
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 123; Journal Issue: 24; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Karni, Ouri, Barré, Elyse, Lau, Sze Cheung, Gillen, Roland, Ma, Eric Yue, Kim, Bumho, Watanabe, Kenji, Taniguchi, Takashi, Maultzsch, Janina, Barmak, Katayun, Page, Ralph H., and Heinz, Tony F. Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.123.247402.
Karni, Ouri, Barré, Elyse, Lau, Sze Cheung, Gillen, Roland, Ma, Eric Yue, Kim, Bumho, Watanabe, Kenji, Taniguchi, Takashi, Maultzsch, Janina, Barmak, Katayun, Page, Ralph H., & Heinz, Tony F. Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures. United States. doi:10.1103/PhysRevLett.123.247402.
Karni, Ouri, Barré, Elyse, Lau, Sze Cheung, Gillen, Roland, Ma, Eric Yue, Kim, Bumho, Watanabe, Kenji, Taniguchi, Takashi, Maultzsch, Janina, Barmak, Katayun, Page, Ralph H., and Heinz, Tony F. Fri . "Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures". United States. doi:10.1103/PhysRevLett.123.247402.
@article{osti_1583131,
title = {Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures},
author = {Karni, Ouri and Barré, Elyse and Lau, Sze Cheung and Gillen, Roland and Ma, Eric Yue and Kim, Bumho and Watanabe, Kenji and Taniguchi, Takashi and Maultzsch, Janina and Barmak, Katayun and Page, Ralph H. and Heinz, Tony F.},
abstractNote = {Here, we report light emission around 1 eV (1240 nm) from heterostructures of MoS2 and WSe2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our results gain access to the interlayer physics of the intrinsically incommensurate MoS2/WSe2 heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.},
doi = {10.1103/PhysRevLett.123.247402},
journal = {Physical Review Letters},
number = 24,
volume = 123,
place = {United States},
year = {2019},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 13, 2020
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Absorption of light by excitons and trions in monolayers of metal dichalcogenide Mo S 2 : Experiments and theory
journal, May 2014


Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2
journal, August 2014


Ultrafast dynamics in van der Waals heterostructures
journal, November 2018


Topological Exciton Bands in Moiré Heterojunctions
journal, April 2017


Moiré excitons: From programmable quantum emitter arrays to spin-orbit–coupled artificial lattices
journal, November 2017


Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers
journal, January 2017


Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS 2 –WSe 2 Heterobilayers
journal, February 2018


Observation of moiré excitons in WSe2/WS2 heterostructure superlattices
journal, February 2019


Evidence for moiré excitons in van der Waals heterostructures
journal, February 2019


Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers
journal, February 2019


Interlayer valley excitons in heterobilayers of transition metal dichalcogenides
journal, August 2018


Directional interlayer spin-valley transfer in two-dimensional heterostructures
journal, December 2016

  • Schaibley, John R.; Rivera, Pasqual; Yu, Hongyi
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms13747

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
journal, February 2015

  • Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7242

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure
journal, February 2016


Observation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures
journal, July 2017


Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures
journal, December 2018


Double Indirect Interlayer Exciton in a MoSe 2 /WSe 2 van der Waals Heterostructure
journal, April 2018

  • Hanbicki, Aubrey T.; Chuang, Hsun-Jen; Rosenberger, Matthew R.
  • ACS Nano, Vol. 12, Issue 5
  • DOI: 10.1021/acsnano.8b01369

Interlayer excitons in MoSe 2 / WSe 2 heterostructures from first principles
journal, April 2018


Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

  • Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.
  • Nature Nanotechnology, Vol. 9, Issue 9
  • DOI: 10.1038/nnano.2014.150

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
journal, July 2014

  • Furchi, Marco M.; Pospischil, Andreas; Libisch, Florian
  • Nano Letters, Vol. 14, Issue 8
  • DOI: 10.1021/nl501962c

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe 2 /MoS 2 Heterojunction p–n Diodes
journal, September 2014

  • Cheng, Rui; Li, Dehui; Zhou, Hailong
  • Nano Letters, Vol. 14, Issue 10
  • DOI: 10.1021/nl502075n

Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
journal, August 2016


Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
journal, April 2014

  • Fang, H.; Battaglia, C.; Carraro, C.
  • Proceedings of the National Academy of Sciences, Vol. 111, Issue 17
  • DOI: 10.1073/pnas.1405435111

Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures
journal, April 2018


QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Optimized norm-conserving Vanderbilt pseudopotentials
journal, August 2013


Unfolding spinor wave functions and expectation values of general operators: Introducing the unfolding-density operator
journal, January 2015


Analysis of the Heyd-Scuseria-Ernzerhof density functional parameter space
journal, May 2012

  • Moussa, Jonathan E.; Schultz, Peter A.; Chelikowsky, James R.
  • The Journal of Chemical Physics, Vol. 136, Issue 20
  • DOI: 10.1063/1.4722993

Band Alignment in WSe 2 –Graphene Heterostructures
journal, February 2015


Boron Nitride–Graphene Nanocapacitor and the Origins of Anomalous Size-Dependent Increase of Capacitance
journal, March 2014

  • Shi, Gang; Hanlumyuang, Yuranan; Liu, Zheng
  • Nano Letters, Vol. 14, Issue 4
  • DOI: 10.1021/nl4037824

Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy
journal, January 2017


Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
journal, September 2012

  • Kim, Ki Kang; Hsu, Allen; Jia, Xiaoting
  • ACS Nano, Vol. 6, Issue 10
  • DOI: 10.1021/nn301675f

Charged excitons in monolayer WSe 2 : Experiment and theory
journal, August 2017


Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
journal, July 2015

  • Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8666

Interlayer Excitons and Band Alignment in MoS 2 /hBN/WSe 2 van der Waals Heterostructures
journal, January 2017


Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures
journal, February 2017

  • Wilson, Neil R.; Nguyen, Paul V.; Seyler, Kyle
  • Science Advances, Vol. 3, Issue 2
  • DOI: 10.1126/sciadv.1601832

Tunable MoS 2 bandgap in MoS 2 -graphene heterostructures
journal, July 2014

  • Ebnonnasir, Abbas; Narayanan, Badri; Kodambaka, Suneel
  • Applied Physics Letters, Vol. 105, Issue 3
  • DOI: 10.1063/1.4891430

Tuning the electronic structure of monolayer graphene/ Mo S 2 van der Waals heterostructures via interlayer twist
journal, November 2015


Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014


Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon
journal, January 2015

  • Yoo, Woo Sik; Kang, Kitaek; Murai, Gota
  • ECS Journal of Solid State Science and Technology, Vol. 4, Issue 12
  • DOI: 10.1149/2.0251512jss

Exciton radiative lifetime in transition metal dichalcogenide monolayers
journal, May 2016


Anomalous Light Cones and Valley Optical Selection Rules of Interlayer Excitons in Twisted Heterobilayers
journal, October 2015


Emerging photoluminescence from the dark-exciton phonon replica in monolayer WSe2
journal, June 2019


Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure
journal, June 2017


Photoinduced doping in heterostructures of graphene and boron nitride
journal, April 2014