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Title: The hunt for the third acceptor in CuInSe 2 and Cu(In,Ga)Se 2 absorber layers

Abstract

We show the model for intrinsic defects in Cu(In,Ga)Se 2 semiconductor layers is still under debate for the full range between CuInSe 2 and CuGaSe 2. It is commonly agreed by theory and experiment, that there are at least one shallow donor and two shallow acceptors. Spatially resolved photoluminescence on CuGaSe 2 previously revealed a third acceptor. In this study we show with the same method that the photoluminescence peak at 0.94 eV in CuInSe 2, previously attributed to a third acceptor, is a phonon replica. However another pronounced peak at 0.9 eV is detected on polycrystalline CuInSe 2 samples grown with high copper and selenium excess. Intensity and temperature dependent photoluminescence measurements reveal that this peak originates from a DA-transition from a shallow donor (<8 meV) into a shallow acceptor A3 (135 [Formula: see text] 10) meV. The DA3 transition has three distinct phonon replicas with 28 meV spectral spacing and a Huang Rhys factor of 0.75. Complementary admittance measurements are dominated by one main step with an activation energy of 125 meV which corresponds well with the found A3 defect. The same defect is also observed in Cu(In,Ga)Se 2 samples with low gallium content. For [Ga]/([Ga] + [In])-ratiosmore » of up to 0.15 both methods show a concordant increase of the activation energy with increasing gallium content shifting the defect deeper into the bandgap. The indium vacancy ν In is discussed as a possible origin of the third acceptor level in CuInSe 2 and ν III in Cu(In,Ga)Se 2.« less

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [2]; ORCiD logo [2]
  1. Univ. of Luxembourg, Esch-sur-Alzette, (Luxembourg); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Univ. of Luxembourg, Esch-sur-Alzette, (Luxembourg)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1582339
Grant/Contract Number:  
[AC02-05CH11231]
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physics. Condensed Matter
Additional Journal Information:
[ Journal Volume: 31; Journal Issue: 42]; Journal ID: ISSN 0953-8984
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; photoluminescence; defects; CIGS; admittance; CuInSe2; Cu-rich

Citation Formats

Babbe, Finn, Elanzeery, Hossam, Wolter, Max H., Santhosh, Korra, and Siebentritt, Susanne. The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers. United States: N. p., 2019. Web. doi:10.1088/1361-648x/ab2e24.
Babbe, Finn, Elanzeery, Hossam, Wolter, Max H., Santhosh, Korra, & Siebentritt, Susanne. The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers. United States. doi:10.1088/1361-648x/ab2e24.
Babbe, Finn, Elanzeery, Hossam, Wolter, Max H., Santhosh, Korra, and Siebentritt, Susanne. Fri . "The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers". United States. doi:10.1088/1361-648x/ab2e24. https://www.osti.gov/servlets/purl/1582339.
@article{osti_1582339,
title = {The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers},
author = {Babbe, Finn and Elanzeery, Hossam and Wolter, Max H. and Santhosh, Korra and Siebentritt, Susanne},
abstractNote = {We show the model for intrinsic defects in Cu(In,Ga)Se2 semiconductor layers is still under debate for the full range between CuInSe2 and CuGaSe2. It is commonly agreed by theory and experiment, that there are at least one shallow donor and two shallow acceptors. Spatially resolved photoluminescence on CuGaSe2 previously revealed a third acceptor. In this study we show with the same method that the photoluminescence peak at 0.94 eV in CuInSe2, previously attributed to a third acceptor, is a phonon replica. However another pronounced peak at 0.9 eV is detected on polycrystalline CuInSe2 samples grown with high copper and selenium excess. Intensity and temperature dependent photoluminescence measurements reveal that this peak originates from a DA-transition from a shallow donor (<8 meV) into a shallow acceptor A3 (135 [Formula: see text] 10) meV. The DA3 transition has three distinct phonon replicas with 28 meV spectral spacing and a Huang Rhys factor of 0.75. Complementary admittance measurements are dominated by one main step with an activation energy of 125 meV which corresponds well with the found A3 defect. The same defect is also observed in Cu(In,Ga)Se2 samples with low gallium content. For [Ga]/([Ga] + [In])-ratios of up to 0.15 both methods show a concordant increase of the activation energy with increasing gallium content shifting the defect deeper into the bandgap. The indium vacancy νIn is discussed as a possible origin of the third acceptor level in CuInSe2 and νIII in Cu(In,Ga)Se2.},
doi = {10.1088/1361-648x/ab2e24},
journal = {Journal of Physics. Condensed Matter},
number = [42],
volume = [31],
place = {United States},
year = {2019},
month = {7}
}

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