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Title: Enhancement of critical current density in CaKFe 4As 4 single crystals through 3 MeV proton irradiation

Abstract

We study the influence of random point disorder on the vortex dynamics and critical current densities J c of CaKFe 4As 4 single crystals by performing magnetization measurements. Different samples were irradiated with a proton (p) beam at constant energy of 3 MeV to fluencies from 2 × 10 15 p cm -2 to 4 × 10 16 p cm -2. The results show the addition of extrinsic random point disorder enhances the J c values at low and intermediate temperatures over the entire range of magnetic fields applied. The optimum pinning enhancement is achieved with a proton fluence of 3 × 10 16 p cm -2, increasing J c at 5 K by factors ≈5 and 14 at self-field and μ 0 H = 3 T, respectively. We analyze the vortex dynamics using the collective creep theory. The enhancement in J c matches with a systematic reduction in the flux creep relaxation rates as a consequence of a gradual increase in the collective pinning energy U 0. The substantial increment in J c produced by random point disorder, reaching values of 9 MA cm -2 at 5 K and self-field, makes CaKFe 4As 4 a promising material for applicationsmore » based on current carrying capacity at high magnetic fields.« less

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [2]; ORCiD logo [2]
  1. Ames Lab., Ames, IA (United States); Comision Nacional de Energia Atomica (CNEA), Rio Negro (Argentina). Centro Atomico Bariloche (CAB)
  2. Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)
  3. Comision Nacional de Energia Atomica (CNEA), Rio Negro (Argentina). Centro Atomico Bariloche (CAB)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1581771
Report Number(s):
IS-J-10109
Journal ID: ISSN 0953-2048
Grant/Contract Number:  
AC02-07CH11358
Resource Type:
Accepted Manuscript
Journal Name:
Superconductor Science and Technology
Additional Journal Information:
Journal Volume: 33; Journal Issue: 2; Journal ID: ISSN 0953-2048
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Haberkorn, N., Xu, M., Meier, W. R., Suárez, S., Bud’ko, S. L., and Canfield, P. C. Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation. United States: N. p., 2020. Web. doi:10.1088/1361-6668/ab5f4b.
Haberkorn, N., Xu, M., Meier, W. R., Suárez, S., Bud’ko, S. L., & Canfield, P. C. Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation. United States. doi:10.1088/1361-6668/ab5f4b.
Haberkorn, N., Xu, M., Meier, W. R., Suárez, S., Bud’ko, S. L., and Canfield, P. C. Tue . "Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation". United States. doi:10.1088/1361-6668/ab5f4b.
@article{osti_1581771,
title = {Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation},
author = {Haberkorn, N. and Xu, M. and Meier, W. R. and Suárez, S. and Bud’ko, S. L. and Canfield, P. C.},
abstractNote = {We study the influence of random point disorder on the vortex dynamics and critical current densities J c of CaKFe4As4 single crystals by performing magnetization measurements. Different samples were irradiated with a proton (p) beam at constant energy of 3 MeV to fluencies from 2 × 1015 p cm-2 to 4 × 1016 p cm-2. The results show the addition of extrinsic random point disorder enhances the J c values at low and intermediate temperatures over the entire range of magnetic fields applied. The optimum pinning enhancement is achieved with a proton fluence of 3 × 1016 p cm-2, increasing J c at 5 K by factors ≈5 and 14 at self-field and μ 0 H = 3 T, respectively. We analyze the vortex dynamics using the collective creep theory. The enhancement in J c matches with a systematic reduction in the flux creep relaxation rates as a consequence of a gradual increase in the collective pinning energy U 0. The substantial increment in J c produced by random point disorder, reaching values of 9 MA cm-2 at 5 K and self-field, makes CaKFe4As4 a promising material for applications based on current carrying capacity at high magnetic fields.},
doi = {10.1088/1361-6668/ab5f4b},
journal = {Superconductor Science and Technology},
number = 2,
volume = 33,
place = {United States},
year = {2020},
month = {1}
}

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