Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation

Haberkorn, N.; Xu, M.; Meier, W. R.; Suárez, S.; Bud’ko, S. L.; Canfield, P. C.

doi:10.1088/1361-6668/ab5f4b

Title: Enhancement of critical current density in CaKFe₄As₄ single crystals through 3 MeV proton irradiation

Journal Article · 06 January 2020 · Superconductor Science and Technology

DOI: https://doi.org/10.1088/1361-6668/ab5f4b · OSTI ID:1581771

^[1]; Xu, M. ^[2]; Meier, W. R. ^[2]; Suárez, S. ^[3]; Bud’ko, S. L. ^[2];

^[2]

Ames Lab., Ames, IA (United States); Comision Nacional de Energia Atomica (CNEA), Rio Negro (Argentina). Centro Atomico Bariloche (CAB)
Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)
Comision Nacional de Energia Atomica (CNEA), Rio Negro (Argentina). Centro Atomico Bariloche (CAB)

We study the influence of random point disorder on the vortex dynamics and critical current densities J _c of CaKFe₄As₄ single crystals by performing magnetization measurements. Different samples were irradiated with a proton (p) beam at constant energy of 3 MeV to fluencies from 2 × 10¹⁵ p cm^-2 to 4 × 10¹⁶ p cm^-2. The results show the addition of extrinsic random point disorder enhances the J _c values at low and intermediate temperatures over the entire range of magnetic fields applied. The optimum pinning enhancement is achieved with a proton fluence of 3 × 10¹⁶ p cm^-2, increasing J _c at 5 K by factors ≈5 and 14 at self-field and μ ₀ H = 3 T, respectively. We analyze the vortex dynamics using the collective creep theory. The enhancement in J _c matches with a systematic reduction in the flux creep relaxation rates as a consequence of a gradual increase in the collective pinning energy U ₀. The substantial increment in J _c produced by random point disorder, reaching values of 9 MA cm^-2 at 5 K and self-field, makes CaKFe₄As₄ a promising material for applications based on current carrying capacity at high magnetic fields.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-07CH11358

OSTI ID:: 1581771

Report Number(s):: IS-J--10109

Journal Information:: Superconductor Science and Technology, Journal Name: Superconductor Science and Technology Journal Issue: 2 Vol. 33; ISSN 0953-2048

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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