Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

doi:10.1063/1.5125784

Title: Electrical characterization of RuO _x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

Authors:

Allen, Noah ^[1]; Ciarkowski, Timothy ^[2];

^[2]; Chakraborty, Amrita ^[1];

^[3]

Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA
Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA, Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA

Publication Date:: 2020-01-01

Sponsoring Org.:: USDOE

OSTI Identifier:: 1581676

Grant/Contract Number:: AR0000446

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: AIP Advances

Additional Journal Information:: Journal Name: AIP Advances Journal Volume: 10 Journal Issue: 1; Journal ID: ISSN 2158-3226

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Allen, Noah, Ciarkowski, Timothy, Carlson, Eric, Chakraborty, Amrita, and Guido, Louis. Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air.  United States: N. p., 2020. 
        Web.  doi:10.1063/1.5125784.

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                    Allen, Noah, Ciarkowski, Timothy, Carlson, Eric, Chakraborty, Amrita, & Guido, Louis. Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air.  United States.  doi:10.1063/1.5125784.

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                    Allen, Noah, Ciarkowski, Timothy, Carlson, Eric, Chakraborty, Amrita, and Guido, Louis. Wed .  
        "Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air".  United States.  doi:10.1063/1.5125784.

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@article{osti_1581676,

  title        = {Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air},

  author       = {Allen, Noah and Ciarkowski, Timothy and Carlson, Eric and Chakraborty, Amrita and Guido, Louis},

  abstractNote = {},

  doi          = {10.1063/1.5125784},

  journal      = {AIP Advances},

  number       = 1,

  volume       = 10,

  place        = {United States},

  year         = {2020},

  month        = {1}

}

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DOI: 10.1063/1.5125784

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Works referenced in this record:

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Extraction of Schottky diode parameters from forward current‐voltage characteristics
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Title: Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

Citation Formats

GaN MSM Ultraviolet Photodetectors with Transparent and Thermally Stable RuO[sub 2] and IrO[sub 2] Schottky Contacts journal, January 2004

Thermally grown ruthenium oxide thin films journal, January 2004

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors journal, July 1974

Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts journal, December 1999

A modified forward I ‐ V plot for Schottky diodes with high series resistance journal, July 1979

Deep centers in a free-standing GaN layer journal, April 2001

Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I - V - T Technique journal, March 2002

Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics journal, April 2006

Evidence for the double distribution of barrier heights in Schottky diodes from I - V - T measurements journal, August 1996

Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n -type GaN journal, August 2003

Conducting Transition Metal Oxides: Possibilities for RuO[sub 2] in VLSI Metallization journal, January 1988

Reactive sputtering of RuO2 films journal, June 1989

RuO 2 /GaN Schottky contact formation with superior forward and reverse characteristics journal, June 2000

Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights journal, July 2019

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon journal, September 2005

Properties and applications of RuO/sub 2//GaN and related Schottky contacts conference, January 2001

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers journal, June 1986

Radiation induced defects in MOVPE grown n-GaN journal, February 2000

Spatially-resolved spectroscopic measurements of E c − 0.57 eV traps in AlGaN/GaN high electron mobility transistors journal, May 2013

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy journal, January 2004

Analysis of deep levels in n ‐type GaN by transient capacitance methods journal, July 1994

Extraction of Schottky diode parameters from forward current‐voltage characteristics journal, July 1986

Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN journal, August 2006

Thermal stability of RuO2/Ru bilayer thin film in oxygen atmosphere journal, January 2000

The barrier height and interface effect of Au-n-GaN Schottky diode journal, June 1995

DLTS study of n-type GaN grown by MOCVD on GaN substrates journal, October 2006

Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN journal, April 2013

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p -GaN journal, May 2000

Low-resistant and high-transparent Ru/Ni ohmic contact on p -type GaN journal, April 2002

Spatial correlation of the E C -0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride journal, June 2018

Barrier inhomogeneities at Schottky contacts journal, February 1991

Title: Electrical characterization of RuO _x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

GaN MSM Ultraviolet Photodetectors with Transparent and Thermally Stable RuO[sub 2] and IrO[sub 2] Schottky Contacts
journal, January 2004

Thermally grown ruthenium oxide thin films
journal, January 2004

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
journal, July 1974

Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts
journal, December 1999

A modified forward I ‐ V plot for Schottky diodes with high series resistance
journal, July 1979

Deep centers in a free-standing GaN layer
journal, April 2001

Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I - V - T Technique
journal, March 2002

Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics
journal, April 2006

Evidence for the double distribution of barrier heights in Schottky diodes from I - V - T measurements
journal, August 1996

Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n -type GaN
journal, August 2003

Conducting Transition Metal Oxides: Possibilities for RuO[sub 2] in VLSI Metallization
journal, January 1988

Reactive sputtering of RuO2 films
journal, June 1989

RuO 2 /GaN Schottky contact formation with superior forward and reverse characteristics
journal, June 2000

Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights
journal, July 2019

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
journal, September 2005

Properties and applications of RuO/sub 2//GaN and related Schottky contacts
conference, January 2001

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
journal, June 1986

Radiation induced defects in MOVPE grown n-GaN
journal, February 2000

Spatially-resolved spectroscopic measurements of E _c − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
journal, May 2013

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
journal, January 2004

Analysis of deep levels in n ‐type GaN by transient capacitance methods
journal, July 1994

Extraction of Schottky diode parameters from forward current‐voltage characteristics
journal, July 1986

Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN
journal, August 2006

Thermal stability of RuO2/Ru bilayer thin film in oxygen atmosphere
journal, January 2000

The barrier height and interface effect of Au-n-GaN Schottky diode
journal, June 1995

DLTS study of n-type GaN grown by MOCVD on GaN substrates
journal, October 2006

Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN
journal, April 2013

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p -GaN
journal, May 2000

Low-resistant and high-transparent Ru/Ni ohmic contact on p -type GaN
journal, April 2002

Spatial correlation of the E _C -0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride
journal, June 2018

Barrier inhomogeneities at Schottky contacts
journal, February 1991