Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air
- Authors:
-
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA
- Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA, Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1581676
- Grant/Contract Number:
- AR0000446
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Name: AIP Advances Journal Volume: 10 Journal Issue: 1; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Allen, Noah, Ciarkowski, Timothy, Carlson, Eric, Chakraborty, Amrita, and Guido, Louis. Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air. United States: N. p., 2020.
Web. doi:10.1063/1.5125784.
Allen, Noah, Ciarkowski, Timothy, Carlson, Eric, Chakraborty, Amrita, & Guido, Louis. Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air. United States. doi:10.1063/1.5125784.
Allen, Noah, Ciarkowski, Timothy, Carlson, Eric, Chakraborty, Amrita, and Guido, Louis. Wed .
"Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air". United States. doi:10.1063/1.5125784.
@article{osti_1581676,
title = {Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air},
author = {Allen, Noah and Ciarkowski, Timothy and Carlson, Eric and Chakraborty, Amrita and Guido, Louis},
abstractNote = {},
doi = {10.1063/1.5125784},
journal = {AIP Advances},
number = 1,
volume = 10,
place = {United States},
year = {2020},
month = {1}
}
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DOI: 10.1063/1.5125784
DOI: 10.1063/1.5125784
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Works referenced in this record:
GaN MSM Ultraviolet Photodetectors with Transparent and Thermally Stable RuO[sub 2] and IrO[sub 2] Schottky Contacts
journal, January 2004
- Kim, Jong Kyu; Lee, Jong-Lam
- Journal of The Electrochemical Society, Vol. 151, Issue 3
Thermally grown ruthenium oxide thin films
journal, January 2004
- Jelenkovic, Emil V.; Tong, K. Y.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 5
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
journal, July 1974
- Lang, D. V.
- Journal of Applied Physics, Vol. 45, Issue 7
Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts
journal, December 1999
- Auret, F. D.; Goodman, S. A.; Myburg, G.
- Physica B: Condensed Matter, Vol. 273-274
A modified forward I ‐ V plot for Schottky diodes with high series resistance
journal, July 1979
- Norde, H.
- Journal of Applied Physics, Vol. 50, Issue 7
Deep centers in a free-standing GaN layer
journal, April 2001
- Fang, Z. -Q.; Look, D. C.; Visconti, P.
- Applied Physics Letters, Vol. 78, Issue 15
Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I - V - T Technique
journal, March 2002
- Yu-Long, Jiang; Guo-Ping, Ru; Fang, Lu
- Chinese Physics Letters, Vol. 19, Issue 4
Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics
journal, April 2006
- Nakamura, W.; Tokuda, Y.; Ueda, H.
- Physica B: Condensed Matter, Vol. 376-377
Evidence for the double distribution of barrier heights in Schottky diodes from I - V - T measurements
journal, August 1996
- Chand, Subhash; Kumar, Jitendra
- Semiconductor Science and Technology, Vol. 11, Issue 8
Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n -type GaN
journal, August 2003
- Cho, H. K.; Kim, C. S.; Hong, C. -H.
- Journal of Applied Physics, Vol. 94, Issue 3
Conducting Transition Metal Oxides: Possibilities for RuO[sub 2] in VLSI Metallization
journal, January 1988
- Krusin-Elbaum, L.
- Journal of The Electrochemical Society, Vol. 135, Issue 10
Reactive sputtering of RuO2 films
journal, June 1989
- Kolawa, E.; So, F. C. T.; Flick, W.
- Thin Solid Films, Vol. 173, Issue 2
RuO 2 /GaN Schottky contact formation with superior forward and reverse characteristics
journal, June 2000
- Suk-Hun Lee,
- IEEE Electron Device Letters, Vol. 21, Issue 6
Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights
journal, July 2019
- Allen, Noah; Ciarkowski, Timothy; Carlson, Eric
- Semiconductor Science and Technology, Vol. 34, Issue 9
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
journal, September 2005
- Armstrong, A.; Arehart, A. R.; Green, D.
- Journal of Applied Physics, Vol. 98, Issue 5
Properties and applications of RuO/sub 2//GaN and related Schottky contacts
conference, January 2001
- Sung-Ho Hahm,
- 6th International Conference on Solid-State and IC Technology, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)
On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
journal, June 1986
- Song, Y. P.; Van Meirhaeghe, R. L.; Laflère, W. H.
- Solid-State Electronics, Vol. 29, Issue 6
Radiation induced defects in MOVPE grown n-GaN
journal, February 2000
- Goodman, S. A.; Auret, F. D.; Koschnick, F. K.
- Materials Science and Engineering: B, Vol. 71, Issue 1-3
Spatially-resolved spectroscopic measurements of E c − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
journal, May 2013
- Cardwell, D. W.; Sasikumar, A.; Arehart, A. R.
- Applied Physics Letters, Vol. 102, Issue 19
Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
journal, January 2004
- Miller, E. J.; Yu, E. T.; Waltereit, P.
- Applied Physics Letters, Vol. 84, Issue 4
Analysis of deep levels in n ‐type GaN by transient capacitance methods
journal, July 1994
- Hacke, P.; Detchprohm, T.; Hiramatsu, K.
- Journal of Applied Physics, Vol. 76, Issue 1
Extraction of Schottky diode parameters from forward current‐voltage characteristics
journal, July 1986
- Cheung, S. K.; Cheung, N. W.
- Applied Physics Letters, Vol. 49, Issue 2
Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN
journal, August 2006
- Ramesh, C. K.; Reddy, V. Rajagopal; Rao, K. S. R. Koteswara
- Journal of Materials Science: Materials in Electronics, Vol. 17, Issue 12
Thermal stability of RuO2/Ru bilayer thin film in oxygen atmosphere
journal, January 2000
- Oh, Sang Ho; Park, Chan Gyung; Park, Chanro Park
- Thin Solid Films, Vol. 359, Issue 1
The barrier height and interface effect of Au-n-GaN Schottky diode
journal, June 1995
- Khan, M. R. H.; Detchprohm, T.; Hacke, P.
- Journal of Physics D: Applied Physics, Vol. 28, Issue 6
DLTS study of n-type GaN grown by MOCVD on GaN substrates
journal, October 2006
- Tokuda, Y.; Matsuoka, Y.; Ueda, H.
- Superlattices and Microstructures, Vol. 40, Issue 4-6
Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN
journal, April 2013
- Lei, Yong; Lu, Hai; Cao, Dongsheng
- Solid-State Electronics, Vol. 82
Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p -GaN
journal, May 2000
- Jang, Ja-Soon; Park, Seong-Ju; Seong, Tae-Yeon
- Applied Physics Letters, Vol. 76, Issue 20
Low-resistant and high-transparent Ru/Ni ohmic contact on p -type GaN
journal, April 2002
- Jang, Ho Won; Urbanek, W.; Yoo, M. C.
- Applied Physics Letters, Vol. 80, Issue 16
Spatial correlation of the E C -0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride
journal, June 2018
- Galiano, K.; Deitz, J. I.; Carnevale, S. D.
- Journal of Applied Physics, Vol. 123, Issue 22
Barrier inhomogeneities at Schottky contacts
journal, February 1991
- Werner, Jürgen H.; Güttler, Herbert H.
- Journal of Applied Physics, Vol. 69, Issue 3