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Title: SiO2–SiC Mixtures at High Pressures and Temperatures: Implications for Planetary Bodies Containing SiC

Abstract

We present results from high-pressure and high-temperature experiments on mixtures of SiC and SiO2 to explore the stability of SiC in the presence of oxygen-rich silicates at planetary mantle conditions. We observe no evidence of the ambient pressure predicted oxidation products, CO or SiO, resulting from oxidation reactions between SiC and SiO2 at pressures up to ~40 GPa and temperatures up to ~2500 K. We observe the decomposition of SiC through releasing C, resulting in vacancies in the SiC lattice and consequently the contracted SiC ambient volume V0 observed in the heated regions of sample. The decomposition is further supported by the observations of diamond formation and the expanded SiO2 V0 in the heated regions of samples indicating the incorporation of C into SiO2 stishovite. We provide a new interpretation of SiC decomposition on laboratory timescales, in which kinetics prevent the reaction from reaching equilibrium. We consider how the equilibrium decomposition reaction of SiC will influence the differentiation of a SiC-containing body on planetary timescales and find that the decomposition products may become isolated during early planetary differentiation. The resulting presence of elemental Si and C within a planetary body may have important consequences for the compositions of the mantlesmore » and atmospheres of such planets.« less

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3]
  1. Yale Univ., New Haven, CT (United States); Harvard Univ., Cambridge, MA (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Yale Univ., New Haven, CT (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States); George Washington Univ., Washington, DC (United States)
Sponsoring Org.:
Carnegie/DOE Alliance Center (CDAC); National Aeronautics and Space Administration (NASA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP)
OSTI Identifier:
1567062
Alternate Identifier(s):
OSTI ID: 1559394; OSTI ID: 1581181
Grant/Contract Number:  
AC02-06CH11357; FG02‐94ER14466; NA0003858; AC02‐06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Geophysical Research. Planets
Additional Journal Information:
Journal Volume: 124; Journal Issue: 8; Journal ID: ISSN 2169-9097
Publisher:
American Geophysical Union
Country of Publication:
United States
Language:
English
Subject:
58 GEOSCIENCES; High-pressure SiC; Si-C-O system; exoplanet composition; exoplanet interiors; laser‐heated diamond anvil cell; oxidation of SiC; 36 MATERIALS SCIENCE

Citation Formats

Daviau, Kierstin, Meng, Yue, and Lee, Kanani K. M. SiO2–SiC Mixtures at High Pressures and Temperatures: Implications for Planetary Bodies Containing SiC. United States: N. p., 2019. Web. doi:10.1029/2018JE005856.
Daviau, Kierstin, Meng, Yue, & Lee, Kanani K. M. SiO2–SiC Mixtures at High Pressures and Temperatures: Implications for Planetary Bodies Containing SiC. United States. https://doi.org/10.1029/2018JE005856
Daviau, Kierstin, Meng, Yue, and Lee, Kanani K. M. Fri . "SiO2–SiC Mixtures at High Pressures and Temperatures: Implications for Planetary Bodies Containing SiC". United States. https://doi.org/10.1029/2018JE005856. https://www.osti.gov/servlets/purl/1567062.
@article{osti_1567062,
title = {SiO2–SiC Mixtures at High Pressures and Temperatures: Implications for Planetary Bodies Containing SiC},
author = {Daviau, Kierstin and Meng, Yue and Lee, Kanani K. M.},
abstractNote = {We present results from high-pressure and high-temperature experiments on mixtures of SiC and SiO2 to explore the stability of SiC in the presence of oxygen-rich silicates at planetary mantle conditions. We observe no evidence of the ambient pressure predicted oxidation products, CO or SiO, resulting from oxidation reactions between SiC and SiO2 at pressures up to ~40 GPa and temperatures up to ~2500 K. We observe the decomposition of SiC through releasing C, resulting in vacancies in the SiC lattice and consequently the contracted SiC ambient volume V0 observed in the heated regions of sample. The decomposition is further supported by the observations of diamond formation and the expanded SiO2 V0 in the heated regions of samples indicating the incorporation of C into SiO2 stishovite. We provide a new interpretation of SiC decomposition on laboratory timescales, in which kinetics prevent the reaction from reaching equilibrium. We consider how the equilibrium decomposition reaction of SiC will influence the differentiation of a SiC-containing body on planetary timescales and find that the decomposition products may become isolated during early planetary differentiation. The resulting presence of elemental Si and C within a planetary body may have important consequences for the compositions of the mantles and atmospheres of such planets.},
doi = {10.1029/2018JE005856},
journal = {Journal of Geophysical Research. Planets},
number = 8,
volume = 124,
place = {United States},
year = {Fri Aug 09 00:00:00 EDT 2019},
month = {Fri Aug 09 00:00:00 EDT 2019}
}

Journal Article:
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Cited by: 1 work
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Figures / Tables:

Figure-1 Figure-1: Diffraction patterns for before, during and after heating each mixture, as well as upon pressure quench when available. Starting, preheat XRD patterns consist of SiC and Ne. After heating to moderate temperatures (~1600-1700 K) we observe the appearance of stishovite peaks corresponding to the crystallization of the amorphous SiO2more » in the sample mixtures. At higher temperatures, we observe the emergence of C diamond, corresponding to the decomposition of the SiC. The rhenium gasket diffraction peaks are labeled with an asterisk * when visible. For all sample compositions we do not observe a reaction between SiC and SiO2 and we do not observe the formation of any additional phases or SiC oxidation products. Experiments depicted here are (A) Layered sample Le_0317, (B) 1:1 sample Lu_0317, (C) 10:1 sample Y02_0317, and (D) 50:1 sample Ch_0317. For Le_0317 the tungsten carbide seat holding one of the diamond anvils prevented in situ observations of low d-spacing, although the low d-spacing peaks are found in the pressure quenched pattern when the gasket was removed from the LHDAC. Ch_0317 does not have a pressure quenched pattern as the diamond anvils failed at high P-T preventing sample recovery.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.