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Title: Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface

Abstract

The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, E F, is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [2];  [4]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation (GBMF); National Science Foundation (NSF); Funai Foundation for Information Technology
OSTI Identifier:
1581087
Grant/Contract Number:  
[AC02-05CH11231; GBMF4859; 1740213]
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
[ Journal Volume: 10; Journal Issue: 1]; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mori, Ryo, Marshall, Patrick B., Ahadi, Kaveh, Denlinger, Jonathan D., Stemmer, Susanne, and Lanzara, Alessandra. Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface. United States: N. p., 2019. Web. doi:10.1038/s41467-019-13046-z.
Mori, Ryo, Marshall, Patrick B., Ahadi, Kaveh, Denlinger, Jonathan D., Stemmer, Susanne, & Lanzara, Alessandra. Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface. United States. doi:10.1038/s41467-019-13046-z.
Mori, Ryo, Marshall, Patrick B., Ahadi, Kaveh, Denlinger, Jonathan D., Stemmer, Susanne, and Lanzara, Alessandra. Wed . "Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface". United States. doi:10.1038/s41467-019-13046-z. https://www.osti.gov/servlets/purl/1581087.
@article{osti_1581087,
title = {Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface},
author = {Mori, Ryo and Marshall, Patrick B. and Ahadi, Kaveh and Denlinger, Jonathan D. and Stemmer, Susanne and Lanzara, Alessandra},
abstractNote = {The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, EF, is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases.},
doi = {10.1038/s41467-019-13046-z},
journal = {Nature Communications},
number = [1],
volume = [10],
place = {United States},
year = {2019},
month = {12}
}

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