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Title: Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future

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ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office
OSTI Identifier:
1580775
Alternate Identifier(s):
OSTI ID: 1580779
Grant/Contract Number:  
EE0007096; DMS 1839077
Resource Type:
Published Article
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Name: ECS Journal of Solid State Science and Technology Journal Volume: 9 Journal Issue: 1; Journal ID: ISSN 2162-8777
Publisher:
The Electrochemical Society
Country of Publication:
Country unknown/Code not available
Language:
English

Citation Formats

Weisbuch, Claude. Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future. Country unknown/Code not available: N. p., 2020. Web. doi:10.1149/2.0392001JSS.
Weisbuch, Claude. Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future. Country unknown/Code not available. doi:10.1149/2.0392001JSS.
Weisbuch, Claude. Wed . "Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future". Country unknown/Code not available. doi:10.1149/2.0392001JSS.
@article{osti_1580775,
title = {Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future},
author = {Weisbuch, Claude},
abstractNote = {},
doi = {10.1149/2.0392001JSS},
journal = {ECS Journal of Solid State Science and Technology},
number = 1,
volume = 9,
place = {Country unknown/Code not available},
year = {2020},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1149/2.0392001JSS

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Works referenced in this record:

Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes
journal, January 2011

  • Chang, Liann-Be; Lai, Mu-Jen; Lin, Ray-Ming
  • Applied Physics Express, Vol. 4, Issue 1
  • DOI: 10.1143/APEX.4.012106

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
journal, September 2008

  • McGroddy, K.; David, A.; Matioli, E.
  • Applied Physics Letters, Vol. 93, Issue 10
  • DOI: 10.1063/1.2978068

Degradation of II‐VI based blue‐green light emitters
journal, December 1993

  • Guha, S.; DePuydt, J. M.; Haase, M. A.
  • Applied Physics Letters, Vol. 63, Issue 23
  • DOI: 10.1063/1.110218

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
journal, August 2016

  • David, Aurelien; Hurni, Christophe A.; Young, Nathan G.
  • Applied Physics Letters, Vol. 109, Issue 8
  • DOI: 10.1063/1.4961491

Spontaneous emission extraction and Purcell enhancement from thin-film 2-D photonic crystals
journal, January 1999

  • Boroditsky, M.; Vrijen, R.; Krauss, T. F.
  • Journal of Lightwave Technology, Vol. 17, Issue 11
  • DOI: 10.1109/50.803000

Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
journal, December 2009


Toward ultrahigh-efficiency aluminum oxide microcavity light-emitting diodes: guided mode extraction by photonic crystals
journal, January 2002

  • Rattier, M.; Benisty, H.; Stanley, R. P.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2
  • DOI: 10.1109/2944.999176

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
journal, September 2014

  • Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.
  • Journal of Applied Physics, Vol. 116, Issue 11
  • DOI: 10.1063/1.4896103

Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells
journal, February 2015

  • Kisin, Mikhail V.; El-Ghoroury, Hussein S.
  • Journal of Computational Electronics, Vol. 14, Issue 2
  • DOI: 10.1007/s10825-015-0673-5

Recent results and latest views on microcavity LEDs
conference, June 2004

  • Weisbuch, Claude; David, Aurelien; Fujii, Tetsuo
  • Integrated Optoelectronic Devices 2004
  • DOI: 10.1117/12.537630

Surface-Roughened Light-Emitting Diodes: An Accurate Model
journal, May 2013


Novel photoemission approach to hot-electron transport in semiconductors
journal, April 1990


Impact of planar microcavity effects on light extraction-Part II: selected exact simulations and role of photon recycling
journal, January 1998

  • Benisty, H.; De Neve, H.; Weisbuch, C.
  • IEEE Journal of Quantum Electronics, Vol. 34, Issue 9
  • DOI: 10.1109/3.709579

Subhistories of the light emitting diode
journal, July 1976


Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
journal, February 2009

  • Vampola, Kenneth J.; Iza, Michael; Keller, Stacia
  • Applied Physics Letters, Vol. 94, Issue 6
  • DOI: 10.1063/1.3081059

On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs
journal, February 2017

  • Kivisaari, Pyry; Sadi, Toufik; Li, Jingrui
  • Advanced Electronic Materials, Vol. 3, Issue 6
  • DOI: 10.1002/aelm.201600494

Tailoring high-temperature radiation and the resurrection of the incandescent source
journal, January 2016


The Theory of Electronic Semi-Conductors
journal, October 1931

  • Wilson, A. H.
  • Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 133, Issue 822
  • DOI: 10.1098/rspa.1931.0162

Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop
journal, July 2017


Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends
journal, January 1998

  • Benisty, H.; De Neve, H.; Weisbuch, C.
  • IEEE Journal of Quantum Electronics, Vol. 34, Issue 9
  • DOI: 10.1109/3.709578

Prospects for 100% wall-plug efficient III-nitride LEDs
journal, January 2018

  • Kuritzky, Leah Y.; Weisbuch, Claude; Speck, James S.
  • Optics Express, Vol. 26, Issue 13
  • DOI: 10.1364/OE.26.016600

Solid-state single photon sources: light collection strategies
journal, February 2002

  • Barnes, W. L.; Björk, G.; Gérard, J. M.
  • The European Physical Journal D - Atomic, Molecular and Optical Physics, Vol. 18, Issue 2
  • DOI: 10.1140/epjd/e20020024

Oleg Vladimirovich Losev: Pioneer of semiconductor electronics (celebrating one hundred years since his birth)
journal, January 2004


Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes
journal, August 2018

  • Myers, Daniel J.; Gelžinytė, Kristina; Ho, Wan Ying
  • Journal of Applied Physics, Vol. 124, Issue 5
  • DOI: 10.1063/1.5030208

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
journal, March 2017


Lateral charge carrier diffusion in InGaN quantum wells
journal, January 2012

  • Danhof, J.; Solowan, H. -M.; Schwarz, U. T.
  • physica status solidi (b), Vol. 249, Issue 3
  • DOI: 10.1002/pssb.201100476

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
journal, February 2009

  • Schubert, Martin F.; Xu, Jiuru; Dai, Qi
  • Applied Physics Letters, Vol. 94, Issue 8
  • DOI: 10.1063/1.3089691

Role of defects in the thermal droop of InGaN-based light emitting diodes
journal, March 2016

  • De Santi, C.; Meneghini, M.; La Grassa, M.
  • Journal of Applied Physics, Vol. 119, Issue 9
  • DOI: 10.1063/1.4942438

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
journal, December 2007

  • Gardner, N. F.; Müller, G. O.; Shen, Y. C.
  • Applied Physics Letters, Vol. 91, Issue 24
  • DOI: 10.1063/1.2807272

A modern perspective on the history of semiconductor nitride blue light sources
journal, September 2015


On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes
journal, December 2013


High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals
journal, January 2010

  • Matioli, Elison; Rangel, Elizabeth; Iza, Micheal
  • Applied Physics Letters, Vol. 96, Issue 3
  • DOI: 10.1063/1.3293442

Universal mechanism for Anderson and weak localization
journal, August 2012

  • Filoche, M.; Mayboroda, S.
  • Proceedings of the National Academy of Sciences, Vol. 109, Issue 37
  • DOI: 10.1073/pnas.1120432109

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
journal, August 2010

  • Rangel, Elizabeth; Matioli, Elison; Chen, Hung-Tse
  • Applied Physics Letters, Vol. 97, Issue 6
  • DOI: 10.1063/1.3480421

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits
journal, May 2016

  • Li, Chi-Kang; Wu, Chen-Kuo; Hsu, Chung-Cheng
  • AIP Advances, Vol. 6, Issue 5
  • DOI: 10.1063/1.4950771

Simulation of light-emitting diodes for new physics understanding and device design
conference, February 2012

  • Bulashevich, K. A.; Khokhlev, O. V.; Evstratov, I. Yu.
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.912305

LED-based white light
journal, March 2018


Injection electroluminescence
journal, May 1961


Light Emission Produced by Current Injected into a Green Silicon-Carbide Crystal
journal, January 1953

  • Lehovec, K.; Accardo, C. A.; Jamgochian, E.
  • Physical Review, Vol. 89, Issue 1
  • DOI: 10.1103/PhysRev.89.20

Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap
journal, March 2019


Spontaneous polarization and piezoelectric constants of III-V nitrides
journal, October 1997

  • Bernardini, Fabio; Fiorentini, Vincenzo; Vanderbilt, David
  • Physical Review B, Vol. 56, Issue 16, p. R10024-R10027
  • DOI: 10.1103/PhysRevB.56.R10024

Über die Kantenemission und andere Emissionen des GaN
journal, March 1959

  • Grimmeiss, H. G.; Koelmans, H.
  • Zeitschrift für Naturforschung A, Vol. 14, Issue 3
  • DOI: 10.1515/zna-1959-0309

Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs
journal, August 2010


Comparisons and contrasts between light emitting diodes and high field electroluminescent devices
journal, July 1981


Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
journal, August 1971


Non-local transport in numerical simulation of GaN LED
journal, April 2015


Materials for Powder-Based AC-Electroluminescence
journal, February 2010

  • Bredol, Michael; Schulze Dieckhoff, Hubert
  • Materials, Vol. 3, Issue 2
  • DOI: 10.3390/ma3021353

Electroluminescent displays: history and lessons learned
journal, August 2003


InGaN light-emitting diodes: Efficiency-limiting processes at high injection
journal, September 2013

  • Avrutin, Vitaliy; Hafiz, Shopan din Ahmad; Zhang, Fan
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
  • DOI: 10.1116/1.4810789

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
journal, February 2009

  • Wierer, Jonathan J.; David, Aurelien; Megens, Mischa M.
  • Nature Photonics, Vol. 3, Issue 3
  • DOI: 10.1038/nphoton.2009.21

Efficiency droop in light-emitting diodes: Challenges and countermeasures: Efficiency droop in light-emitting diodes: Challenges and countermeasures
journal, January 2013

  • Cho, Jaehee; Schubert, E. Fred; Kim, Jong Kyu
  • Laser & Photonics Reviews, Vol. 7, Issue 3
  • DOI: 10.1002/lpor.201200025

Evidence of Refrigerating Action by Means of Photon Emission in Semiconductor Diodes
journal, January 1964


More light: A short historical sketch of Carl Auer von Welsbach
journal, March 1970

  • Gutmann, Viktor
  • Journal of Chemical Education, Vol. 47, Issue 3
  • DOI: 10.1021/ed047p209

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
journal, December 2012

  • Kioupakis, Emmanouil; Yan, Qimin; Van de Walle, Chris G.
  • Applied Physics Letters, Vol. 101, Issue 23
  • DOI: 10.1063/1.4769374

Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
journal, December 2013


Thermally enhanced blue light-emitting diode
journal, September 2015

  • Xue, Jin; Zhao, Yuji; Oh, Sang-Ho
  • Applied Physics Letters, Vol. 107, Issue 12
  • DOI: 10.1063/1.4931365

Alloy effects in Ga1−xInxN/GaN heterostructures
journal, June 2004

  • Nguyen, Duc-Phuong; Regnault, N.; Ferreira, R.
  • Solid State Communications, Vol. 130, Issue 11
  • DOI: 10.1016/j.ssc.2004.03.048

LEDs challenge the incandescents
journal, September 1992

  • Craford, M. G.
  • IEEE Circuits and Devices Magazine, Vol. 8, Issue 5
  • DOI: 10.1109/101.158509

Carrier localization mechanisms in In x Ga 1 x N/GaN quantum wells
journal, March 2011


Light-Emitting Diodes and Semiconductor Materials for Displays
journal, September 1973

  • Nuese, C. J.; Kressel, H.; Ladany, I.
  • Journal of Vacuum Science and Technology, Vol. 10, Issue 5
  • DOI: 10.1116/1.1318433

Current status and future prospects of ZnSe-based light-emitting devices
journal, June 2000


Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode
journal, May 2010

  • Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji
  • Applied Physics Letters, Vol. 96, Issue 21
  • DOI: 10.1063/1.3442918

Research on crystal rectifiers during World War II and the invention of the transistor
journal, January 1994


Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations
journal, September 2017

  • Jones, Christina M.; Teng, Chu-Hsiang; Yan, Qimin
  • Applied Physics Letters, Vol. 111, Issue 11
  • DOI: 10.1063/1.5002104

The role of extended defects on the performance of optoelectronic devices in nitride semiconductors
journal, November 2012


Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling
journal, January 2012

  • Zakheim, D. A.; Pavluchenko, A. S.; Bauman, D. A.
  • physica status solidi (a), Vol. 209, Issue 3
  • DOI: 10.1002/pssa.201100317

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010


Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
journal, April 2017


Localization landscape theory of disorder in semiconductors. I. Theory and modeling
journal, April 2017


Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
journal, January 2015


High-brightness polarized light-emitting diodes
journal, August 2012

  • Matioli, Elison; Brinkley, Stuart; Kelchner, Kathryn M.
  • Light: Science & Applications, Vol. 1, Issue 8
  • DOI: 10.1038/lsa.2012.22

Electroluminescence and Related Topics
journal, January 1955


Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
journal, January 2015

  • Hurni, Christophe A.; David, Aurelien; Cich, Michael J.
  • Applied Physics Letters, Vol. 106, Issue 3
  • DOI: 10.1063/1.4905873

Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection
journal, April 2011

  • Matioli, Elison; Weisbuch, Claude
  • Journal of Applied Physics, Vol. 109, Issue 7
  • DOI: 10.1063/1.3549730

Deep-Ultraviolet Light-Emitting Diodes
journal, January 2010


Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs
journal, February 2012


Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop
journal, August 2013

  • Akyol, Fatih; Krishnamoorthy, Sriram; Rajan, Siddharth
  • Applied Physics Letters, Vol. 103, Issue 8
  • DOI: 10.1063/1.4819737

Irreversible Thermodynamic Bound for the Efficiency of Light-Emitting Diodes
journal, July 2017


Plasmonics for extreme light concentration and manipulation
journal, February 2010

  • Schuller, Jon A.; Barnard, Edward S.; Cai, Wenshan
  • Nature Materials, Vol. 9, Issue 3
  • DOI: 10.1038/nmat2630

Impact of Compositional Nonuniformity in ( In , Ga ) N -Based Light-Emitting Diodes
journal, July 2019


Comment on “Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation” [Appl. Phys. Lett. 83 , 380 (2003)]
journal, March 2004

  • Trupke, Thorsten; Würfel, Peter; Green, Martin A.
  • Applied Physics Letters, Vol. 84, Issue 11
  • DOI: 10.1063/1.1667269

Percolation transport study in nitride based LED by considering the random alloy fluctuation
journal, March 2015

  • Wu, Chen-Kuo; Li, Chi-Kang; Wu, Yuh-Renn
  • Journal of Computational Electronics, Vol. 14, Issue 2
  • DOI: 10.1007/s10825-015-0688-y

The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes
journal, November 2013

  • Vaxenburg, Roman; Rodina, Anna; Lifshitz, Efrat
  • Applied Physics Letters, Vol. 103, Issue 22
  • DOI: 10.1063/1.4833915

Historical perspective on the physics of artificial lighting
journal, March 2018


Efficiency Drop in Green InGaN / GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations
journal, January 2016


Efficient InGaN-based yellow-light-emitting diodes
journal, January 2019

  • Jiang, Fengyi; Zhang, Jianli; Xu, Longquan
  • Photonics Research, Vol. 7, Issue 2
  • DOI: 10.1364/PRJ.7.000144

InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
journal, December 2002

  • Yamada, Motokazu; Mitani, Tomotsugu; Narukawa, Yukio
  • Japanese Journal of Applied Physics, Vol. 41, Issue Part 2, No. 12B
  • DOI: 10.1143/JJAP.41.L1431

How to deal with the loss in plasmonics and metamaterials
journal, January 2015


The life and times of the LED — a 100-year history
journal, April 2007


Non equilibrium Green’s function quantum transport for green multi-quantum well nitride light emitting diodes
journal, January 2018


Multiscale approaches for the simulation of InGaN/GaN LEDs
journal, March 2015


Zwei Bemerkungen �ber den Unterschied von Lumineszenz- und Temperaturstrahlung
journal, November 1929

  • Pringsheim, Peter
  • Zeitschrift f�r Physik, Vol. 57, Issue 11-12
  • DOI: 10.1007/BF01340652

Seven Centuries of Energy Services: The Price and Use of Light in the United Kingdom (1300-2000)
journal, January 2006


The role of threading dislocations in the physical properties of GaN and its alloys
journal, December 1999


History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes
journal, May 2008

  • Dupuis, Russell D.; Krames, Michael R.
  • Journal of Lightwave Technology, Vol. 26, Issue 9, p. 1154-1171
  • DOI: 10.1109/JLT.2008.923628

Blue light emitting diode internal and injection efficiency
journal, September 2012

  • Titkov, Ilya E.; Sannikov, Denis A.; Park, Young-Min
  • AIP Advances, Vol. 2, Issue 3
  • DOI: 10.1063/1.4739409

Band structure of indium phosphide from near-band-gap photoemission
journal, October 1991


Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes
journal, May 2014


Electroluminescent measurement of the internal quantum efficiency of light emitting diodes
journal, May 2009

  • Getty, Amorette; Matioli, Elison; Iza, Michael
  • Applied Physics Letters, Vol. 94, Issue 18
  • DOI: 10.1063/1.3129866

The efficiency challenge of nitride light-emitting diodes for lighting: The efficiency challenge of nitride LEDs for lighting
journal, March 2015

  • Weisbuch, Claude; Piccardo, Marco; Martinelli, Lucio
  • physica status solidi (a), Vol. 212, Issue 5
  • DOI: 10.1002/pssa.201431868

Photonic crystal light-emitting sources
journal, October 2012


Laser cooling in solids: advances and prospects
journal, August 2016

  • Seletskiy, Denis V.; Epstein, Richard; Sheik-Bahae, Mansoor
  • Reports on Progress in Physics, Vol. 79, Issue 9
  • DOI: 10.1088/0034-4885/79/9/096401

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
journal, December 2017

  • Haller, C.; Carlin, J. -F.; Jacopin, G.
  • Applied Physics Letters, Vol. 111, Issue 26
  • DOI: 10.1063/1.5007616

Exciton localization and the Stokes’ shift in InGaN epilayers
journal, January 1999

  • Martin, R. W.; Middleton, P. G.; O’Donnell, K. P.
  • Applied Physics Letters, Vol. 74, Issue 2
  • DOI: 10.1063/1.123275

Wide bandgap semiconductors and their application to light emitting devices
journal, February 1996


Injected Light Emission of Silicon Carbide Crystals
journal, August 1951


Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes
journal, April 2018

  • Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji
  • Applied Physics Letters, Vol. 112, Issue 14
  • DOI: 10.1063/1.5021475

Auger recombination in InGaN measured by photoluminescence
journal, October 2007

  • Shen, Y. C.; Mueller, G. O.; Watanabe, S.
  • Applied Physics Letters, Vol. 91, Issue 14
  • DOI: 10.1063/1.2785135

High wall-plug efficiency blue III-nitride LEDs designed for low current density operation
journal, January 2017

  • Kuritzky, Leah Y.; Espenlaub, Andrew C.; Yonkee, Benjamin P.
  • Optics Express, Vol. 25, Issue 24
  • DOI: 10.1364/OE.25.030696

High internal and external quantum efficiency InGaN/GaN solar cells
journal, January 2011

  • Matioli, Elison; Neufeld, Carl; Iza, Michael
  • Applied Physics Letters, Vol. 98, Issue 2
  • DOI: 10.1063/1.3540501

Origin of Luminescence from InGaN Diodes
journal, January 1999


Observation of laser-induced fluorescent cooling of a solid
journal, October 1995

  • Epstein, Richard I.; Buchwald, Melvin I.; Edwards, Bradley C.
  • Nature, Vol. 377, Issue 6549
  • DOI: 10.1038/377500a0

High dislocation densities in high efficiency GaN‐based light‐emitting diodes
journal, March 1995

  • Lester, S. D.; Ponce, F. A.; Craford, M. G.
  • Applied Physics Letters, Vol. 66, Issue 10
  • DOI: 10.1063/1.113252

Compensation between radiative and Auger recombinations in III-nitrides: The scaling law of separated-wavefunction recombinations
journal, November 2019

  • David, Aurelien; Young, Nathan G.; Lund, Cory
  • Applied Physics Letters, Vol. 115, Issue 19
  • DOI: 10.1063/1.5123743

CII. Luminous carborundum detector and detection effect and oscillations with crystals
journal, November 1928

  • Lossev, O. V.
  • The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 6, Issue 39
  • DOI: 10.1080/14786441108564683

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
journal, November 1969

  • Maruska, H. P.; Tietjen, J. J.
  • Applied Physics Letters, Vol. 15, Issue 10
  • DOI: 10.1063/1.1652845

Optimization of Light-Diffracting Photonic-Crystals for High Extraction Efficiency LEDs
journal, June 2007

  • David, Aurlien; Benisty, Henri; Weisbuch, Claude
  • Journal of Display Technology, Vol. 3, Issue 2
  • DOI: 10.1109/JDT.2007.896736

External radiative quantum efficiency of 96% from a GaAs / GaInP heterostructure
journal, January 1997

  • Gauck, H.; Gfroerer, T. H.; Renn, M. J.
  • Applied Physics A: Materials Science & Processing, Vol. 64, Issue 2
  • DOI: 10.1007/s003390050455

Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency
journal, February 2012


Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation
journal, July 2003

  • Lin, S. Y.; Moreno, J.; Fleming, J. G.
  • Applied Physics Letters, Vol. 83, Issue 2, p. 380-382
  • DOI: 10.1063/1.1592614

Droop in III-nitrides: Comparison of bulk and injection contributions
journal, November 2010

  • David, Aurélien; Gardner, Nathan F.
  • Applied Physics Letters, Vol. 97, Issue 19
  • DOI: 10.1063/1.3515851

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
journal, August 2013

  • Bertazzi, Francesco; Zhou, Xiangyu; Goano, Michele
  • Applied Physics Letters, Vol. 103, Issue 8
  • DOI: 10.1063/1.4819129

L'émission infrarouge du germanium
journal, January 1956