Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

Hettick, Mark; Li, Hao; Lien, Der-Hsien; Yeh, Matthew; Yang, Tzu-Yi; Amani, Matin; Gupta, Niharika; Chrzan, Daryl C.; Chueh, Yu-Lun; Javey, Ali

doi:10.1073/pnas.1915786117

Title: Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

Journal Article · 31 December 2019 · Proceedings of the National Academy of Sciences of the United States of America

DOI: https://doi.org/10.1073/pnas.1915786117 · OSTI ID:1580675

Hettick, Mark ^[1];

^[1];

^[1]; Yeh, Matthew ^[1]; Yang, Tzu-Yi ^[2]; Amani, Matin ^[1]; Gupta, Niharika ^[1]; Chrzan, Daryl C. ^[3]; Chueh, Yu-Lun ^[2];

^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Tsing Hua Univ., Hsinchu (Taiwan)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE

Grant/Contract Number:: AC02-05CH11231; AC02-05Ch11231

OSTI ID:: 1580675

Alternate ID(s):: OSTI ID: 1599836

Journal Information:: Proceedings of the National Academy of Sciences of the United States of America, Vol. 117, Issue 2; ISSN 0027-8424

Publisher:: National Academy of SciencesCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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Title: Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

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