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Title: Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

Abstract

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

Authors:
; ORCiD logo; ORCiD logo; ; ; ; ; ; ; ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1580675
Grant/Contract Number:  
AC02-05Ch11231
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 117 Journal Issue: 2; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English

Citation Formats

Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, and Javey, Ali. Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C. United States: N. p., 2019. Web. doi:10.1073/pnas.1915786117.
Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, & Javey, Ali. Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C. United States. doi:10.1073/pnas.1915786117.
Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, and Javey, Ali. Tue . "Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C". United States. doi:10.1073/pnas.1915786117.
@article{osti_1580675,
title = {Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C},
author = {Hettick, Mark and Li, Hao and Lien, Der-Hsien and Yeh, Matthew and Yang, Tzu-Yi and Amani, Matin and Gupta, Niharika and Chrzan, Daryl C. and Chueh, Yu-Lun and Javey, Ali},
abstractNote = {III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.},
doi = {10.1073/pnas.1915786117},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 2,
volume = 117,
place = {United States},
year = {2019},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1915786117

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Works referenced in this record:

Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events
journal, May 2004

  • Dick, Kimberly A.; Deppert, Knut; Larsson, Magnus W.
  • Nature Materials, Vol. 3, Issue 6, p. 380-384
  • DOI: 10.1038/nmat1133

Materials and Mechanics for Stretchable Electronics
journal, March 2010


Optical Properties of Rotationally Twinned InP Nanowire Heterostructures
journal, March 2008

  • Bao, Jiming; Bell, David C.; Capasso, Federico
  • Nano Letters, Vol. 8, Issue 3
  • DOI: 10.1021/nl072921e

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires
journal, January 1998


Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere
journal, April 1989

  • Hofmann, D.; M�ller, G.; Streckfu�, N.
  • Applied Physics A Solids and Surfaces, Vol. 48, Issue 4
  • DOI: 10.1007/BF00618891

Transfer printing by kinetic control of adhesion to an elastomeric stamp
journal, December 2005

  • Meitl, Matthew A.; Zhu, Zheng-Tao; Kumar, Vipan
  • Nature Materials, Vol. 5, Issue 1, p. 33-38
  • DOI: 10.1038/nmat1532

Vapor-liquid-solid mechanism of single crystal growth
journal, March 1964

  • Wagner, R. S.; Ellis, W. C.
  • Applied Physics Letters, Vol. 4, Issue 5, p. 89-90
  • DOI: 10.1063/1.1753975

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio
journal, January 1980

  • Walukiewicz, W.; Lagowski, J.; Jastrzebski, L.
  • Journal of Applied Physics, Vol. 51, Issue 5
  • DOI: 10.1063/1.327925

Large-area and bright pulsed electroluminescence in monolayer semiconductors
journal, March 2018


A PH 3 cracking furnace for molecular beam epitaxy
journal, January 1983

  • Chow, Robert; Chai, Young G.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 1, Issue 1
  • DOI: 10.1116/1.572309

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
journal, January 2001

  • Duan, Xiangfeng; Huang, Yu; Cui, Yi
  • Nature, Vol. 409, Issue 6816, p. 66-69
  • DOI: 10.1038/35051047

Direct growth of single-crystalline III–V semiconductors on amorphous substrates
journal, January 2016

  • Chen, Kevin; Kapadia, Rehan; Harker, Audrey
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10502

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
journal, November 2004

  • Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro
  • Nature, Vol. 432, Issue 7016, p. 488-492
  • DOI: 10.1038/nature03090

Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth
journal, June 2010

  • Shu-Lu Chen, ; Griffin, Peter B.; Plummer, James D.
  • IEEE Electron Device Letters, Vol. 31, Issue 6
  • DOI: 10.1109/LED.2010.2045875

Deterministic Nucleation of InP on Metal Foils with the Thin-Film Vapor–Liquid–Solid Growth Mode
journal, January 2014

  • Kapadia, Rehan; Yu, Zhibin; Hettick, Mark
  • Chemistry of Materials, Vol. 26, Issue 3
  • DOI: 10.1021/cm403403v

Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication
journal, August 2012

  • Carlson, Andrew; Bowen, Audrey M.; Huang, Yonggang
  • Advanced Materials, Vol. 24, Issue 39, p. 5284-5318
  • DOI: 10.1002/adma.201201386

Thermodynamic analysis of the In-P, Ga-As, In-As And Al-Sb Systems
journal, December 1996


Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
journal, April 2011

  • Kim, Myung-Gil; Kanatzidis, Mercouri G.; Facchetti, Antonio
  • Nature Materials, Vol. 10, Issue 5, p. 382-388
  • DOI: 10.1038/nmat3011

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
journal, November 2010

  • Ko, Hyunhyub; Takei, Kuniharu; Kapadia, Rehan
  • Nature, Vol. 468, Issue 7321
  • DOI: 10.1038/nature09541

A direct thin-film path towards low-cost large-area III-V photovoltaics
journal, July 2013

  • Kapadia, Rehan; Yu, Zhibin; Wang, Hsin-Hua H.
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02275

Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
journal, December 1995


III–V nanowire arrays: growth and light interaction
journal, December 2013