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Title: Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

Abstract

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

Authors:
; ORCiD logo; ORCiD logo; ; ; ; ; ; ; ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1580675
Grant/Contract Number:  
AC02-05Ch11231
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 117 Journal Issue: 2; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English

Citation Formats

Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, and Javey, Ali. Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C. United States: N. p., 2019. Web. doi:10.1073/pnas.1915786117.
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Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, & Javey, Ali. Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C. United States. doi:10.1073/pnas.1915786117.
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Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, and Javey, Ali. Tue . "Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C". United States. doi:10.1073/pnas.1915786117.
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@article{osti_1580675,
title = {Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C},
author = {Hettick, Mark and Li, Hao and Lien, Der-Hsien and Yeh, Matthew and Yang, Tzu-Yi and Amani, Matin and Gupta, Niharika and Chrzan, Daryl C. and Chueh, Yu-Lun and Javey, Ali},
abstractNote = {III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.},
doi = {10.1073/pnas.1915786117},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 2,
volume = 117,
place = {United States},
year = {2019},
month = {12}
}
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DOI: 10.1073/pnas.1915786117
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