Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C
Abstract
III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1580675
- Alternate Identifier(s):
- OSTI ID: 1599836
- Grant/Contract Number:
- AC02-05Ch11231; AC02-05CH11231
- Resource Type:
- Published Article
- Journal Name:
- Proceedings of the National Academy of Sciences of the United States of America
- Additional Journal Information:
- Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 117 Journal Issue: 2; Journal ID: ISSN 0027-8424
- Publisher:
- National Academy of Sciences
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; III-V semiconductors; InP; growth; low temperature; single crystal
Citation Formats
Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, and Javey, Ali. Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C. United States: N. p., 2019.
Web. doi:10.1073/pnas.1915786117.
Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, & Javey, Ali. Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C. United States. https://doi.org/10.1073/pnas.1915786117
Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, and Javey, Ali. Tue .
"Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C". United States. https://doi.org/10.1073/pnas.1915786117.
@article{osti_1580675,
title = {Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C},
author = {Hettick, Mark and Li, Hao and Lien, Der-Hsien and Yeh, Matthew and Yang, Tzu-Yi and Amani, Matin and Gupta, Niharika and Chrzan, Daryl C. and Chueh, Yu-Lun and Javey, Ali},
abstractNote = {III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.},
doi = {10.1073/pnas.1915786117},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 2,
volume = 117,
place = {United States},
year = {2019},
month = {12}
}
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https://doi.org/10.1073/pnas.1915786117
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