High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules
Abstract
High‐temperature optical analysis of three different InGaN/GaN multiple quantum well (MQW) light‐emitting diode (LED) structures (peak wavelength λ p = 448, 467, and 515 nm) is conducted for possible integration as an optocoupler emitter in high‐density power electronic modules. The commercially available LEDs, primarily used in the display ( λ p = 467 and 515 nm) and lighting ( λ p = 448 nm) applications, are studied and compared to evaluate if they can satisfy the light output requirements in the optocouplers at high temperatures. The temperature‐ and intensity‐dependent electroluminescence (T‐IDEL) measurement technique is used to study the internal quantum efficiency (IQE) of the LEDs. All three LEDs exhibit above 70% IQE at 500 K and stable operation at 800 K without flickering or failure. At 800 K, a promising IQE of above 40% is observed for blue for display (BD) ( λ p = 467 nm) and green for display (GD) ( λ p = 515 nm) samples. The blue for light (BL) ( λ p = 448 nm) sample shows 24% IQE at 800 K.
- Authors:
-
- Univ. of Arkansas, Fayetteville, AR (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D); USDOE
- OSTI Identifier:
- 1778063
- Alternate Identifier(s):
- OSTI ID: 1580636
- Report Number(s):
- SAND-2021-4108J
Journal ID: ISSN 1862-6300; 695349
- Grant/Contract Number:
- AC04-94AL85000; NA0003525; SC0016485
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica Status Solidi. A, Applications and Materials Science
- Additional Journal Information:
- Journal Volume: 217; Journal Issue: 7; Journal ID: ISSN 1862-6300
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; high-density power modules; high-temperature optocouplers; high-temperature optoelectronics; quantum efficiency
Citation Formats
Madhusoodhanan, Syam, Sabbar, Abbas, Atcitty, Stanley, Kaplar, Robert, Mantooth, Alan, Yu, Shui-Qing, and Chen, Zhong. High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules. United States: N. p., 2019.
Web. doi:10.1002/pssa.201900792.
Madhusoodhanan, Syam, Sabbar, Abbas, Atcitty, Stanley, Kaplar, Robert, Mantooth, Alan, Yu, Shui-Qing, & Chen, Zhong. High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules. United States. https://doi.org/10.1002/pssa.201900792
Madhusoodhanan, Syam, Sabbar, Abbas, Atcitty, Stanley, Kaplar, Robert, Mantooth, Alan, Yu, Shui-Qing, and Chen, Zhong. Wed .
"High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules". United States. https://doi.org/10.1002/pssa.201900792. https://www.osti.gov/servlets/purl/1778063.
@article{osti_1778063,
title = {High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules},
author = {Madhusoodhanan, Syam and Sabbar, Abbas and Atcitty, Stanley and Kaplar, Robert and Mantooth, Alan and Yu, Shui-Qing and Chen, Zhong},
abstractNote = {High‐temperature optical analysis of three different InGaN/GaN multiple quantum well (MQW) light‐emitting diode (LED) structures (peak wavelength λ p = 448, 467, and 515 nm) is conducted for possible integration as an optocoupler emitter in high‐density power electronic modules. The commercially available LEDs, primarily used in the display ( λ p = 467 and 515 nm) and lighting ( λ p = 448 nm) applications, are studied and compared to evaluate if they can satisfy the light output requirements in the optocouplers at high temperatures. The temperature‐ and intensity‐dependent electroluminescence (T‐IDEL) measurement technique is used to study the internal quantum efficiency (IQE) of the LEDs. All three LEDs exhibit above 70% IQE at 500 K and stable operation at 800 K without flickering or failure. At 800 K, a promising IQE of above 40% is observed for blue for display (BD) ( λ p = 467 nm) and green for display (GD) ( λ p = 515 nm) samples. The blue for light (BL) ( λ p = 448 nm) sample shows 24% IQE at 800 K.},
doi = {10.1002/pssa.201900792},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 7,
volume = 217,
place = {United States},
year = {Wed Dec 18 00:00:00 EST 2019},
month = {Wed Dec 18 00:00:00 EST 2019}
}
Web of Science
Works referenced in this record:
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
journal, October 2013
- Nakamura, Shuji; Krames, M. R.
- Proceedings of the IEEE, Vol. 101, Issue 10
Advances in silicon carbide science and technology at the micro- and nanoscales
journal, September 2013
- Maboudian, Roya; Carraro, Carlo; Senesky, Debbie G.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
journal, November 2000
- Lin, Yen-Sheng; Ma, Kung-Jeng; Hsu, C.
- Applied Physics Letters, Vol. 77, Issue 19
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
journal, November 2008
- Törmä, P. T.; Svensk, O.; Ali, M.
- Journal of Crystal Growth, Vol. 310, Issue 23
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
journal, September 1998
- Cho, Yong-Hoon; Gainer, G. H.; Fischer, A. J.
- Applied Physics Letters, Vol. 73, Issue 10
Influence of photon recycling on semiconductor luminescence refrigeration
journal, August 2006
- Wang, J. -B.; Johnson, S. R.; Ding, D.
- Journal of Applied Physics, Vol. 100, Issue 4
The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
journal, January 2000
- Benamara, M.; Liliental-Weber, Z.; Mazur, J. H.
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 5, Issue S1
Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications
journal, January 2002
- Koike, M.; Shibata, N.; Kato, H.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2
The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
journal, January 1999
- Benamara, M.; Liliental-Weber, Z.; Mazur, J. H.
- MRS Proceedings, Vol. 595