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Title: High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules

Abstract

High‐temperature optical analysis of three different InGaN/GaN multiple quantum well (MQW) light‐emitting diode (LED) structures (peak wavelength λ p  = 448, 467, and 515 nm) is conducted for possible integration as an optocoupler emitter in high‐density power electronic modules. The commercially available LEDs, primarily used in the display ( λ p  = 467 and 515 nm) and lighting ( λ p  = 448 nm) applications, are studied and compared to evaluate if they can satisfy the light output requirements in the optocouplers at high temperatures. The temperature‐ and intensity‐dependent electroluminescence (T‐IDEL) measurement technique is used to study the internal quantum efficiency (IQE) of the LEDs. All three LEDs exhibit above 70% IQE at 500 K and stable operation at 800 K without flickering or failure. At 800 K, a promising IQE of above 40% is observed for blue for display (BD) ( λ p  = 467 nm) and green for display (GD) ( λ p  = 515 nm) samples. The blue for light (BL) ( λ p  = 448 nm) sample shows 24% IQE at 800 K.

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [1];  [1];  [1]
  1. Univ. of Arkansas, Fayetteville, AR (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D); USDOE
OSTI Identifier:
1778063
Alternate Identifier(s):
OSTI ID: 1580636
Report Number(s):
SAND-2021-4108J
Journal ID: ISSN 1862-6300; 695349
Grant/Contract Number:  
AC04-94AL85000; NA0003525; SC0016485
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 217; Journal Issue: 7; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; high-density power modules; high-temperature optocouplers; high-temperature optoelectronics; quantum efficiency

Citation Formats

Madhusoodhanan, Syam, Sabbar, Abbas, Atcitty, Stanley, Kaplar, Robert, Mantooth, Alan, Yu, Shui-Qing, and Chen, Zhong. High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules. United States: N. p., 2019. Web. doi:10.1002/pssa.201900792.
Madhusoodhanan, Syam, Sabbar, Abbas, Atcitty, Stanley, Kaplar, Robert, Mantooth, Alan, Yu, Shui-Qing, & Chen, Zhong. High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules. United States. https://doi.org/10.1002/pssa.201900792
Madhusoodhanan, Syam, Sabbar, Abbas, Atcitty, Stanley, Kaplar, Robert, Mantooth, Alan, Yu, Shui-Qing, and Chen, Zhong. Wed . "High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules". United States. https://doi.org/10.1002/pssa.201900792. https://www.osti.gov/servlets/purl/1778063.
@article{osti_1778063,
title = {High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules},
author = {Madhusoodhanan, Syam and Sabbar, Abbas and Atcitty, Stanley and Kaplar, Robert and Mantooth, Alan and Yu, Shui-Qing and Chen, Zhong},
abstractNote = {High‐temperature optical analysis of three different InGaN/GaN multiple quantum well (MQW) light‐emitting diode (LED) structures (peak wavelength λ p  = 448, 467, and 515 nm) is conducted for possible integration as an optocoupler emitter in high‐density power electronic modules. The commercially available LEDs, primarily used in the display ( λ p  = 467 and 515 nm) and lighting ( λ p  = 448 nm) applications, are studied and compared to evaluate if they can satisfy the light output requirements in the optocouplers at high temperatures. The temperature‐ and intensity‐dependent electroluminescence (T‐IDEL) measurement technique is used to study the internal quantum efficiency (IQE) of the LEDs. All three LEDs exhibit above 70% IQE at 500 K and stable operation at 800 K without flickering or failure. At 800 K, a promising IQE of above 40% is observed for blue for display (BD) ( λ p  = 467 nm) and green for display (GD) ( λ p  = 515 nm) samples. The blue for light (BL) ( λ p  = 448 nm) sample shows 24% IQE at 800 K.},
doi = {10.1002/pssa.201900792},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 7,
volume = 217,
place = {United States},
year = {Wed Dec 18 00:00:00 EST 2019},
month = {Wed Dec 18 00:00:00 EST 2019}
}

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