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Title: Modeling dislocation-related leakage currents in GaN p-n diodes

ORCiD logo [1];  [1]; ORCiD logo [2];  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106, USA
  2. Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan
Publication Date:
Sponsoring Org.:
OSTI Identifier:
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 24; Journal ID: ISSN 0021-8979
American Institute of Physics
Country of Publication:
United States

Citation Formats

Robertson, C. A., Qwah, K. S., Wu, Y. -R., and Speck, J. S. Modeling dislocation-related leakage currents in GaN p-n diodes. United States: N. p., 2019. Web. doi:10.1063/1.5123394.
Robertson, C. A., Qwah, K. S., Wu, Y. -R., & Speck, J. S. Modeling dislocation-related leakage currents in GaN p-n diodes. United States.
Robertson, C. A., Qwah, K. S., Wu, Y. -R., and Speck, J. S. Sat . "Modeling dislocation-related leakage currents in GaN p-n diodes". United States.
title = {Modeling dislocation-related leakage currents in GaN p-n diodes},
author = {Robertson, C. A. and Qwah, K. S. and Wu, Y. -R. and Speck, J. S.},
abstractNote = {},
doi = {10.1063/1.5123394},
journal = {Journal of Applied Physics},
number = 24,
volume = 126,
place = {United States},
year = {2019},
month = {12}

Works referenced in this record:

Temperature quenching of photoluminescence intensities in undoped and doped GaN
journal, October 1999

  • Leroux, M.; Grandjean, N.; Beaumont, B.
  • Journal of Applied Physics, Vol. 86, Issue 7
  • DOI: 10.1063/1.371242

Molecular beam epitaxy for high-performance Ga-face GaN electron devices
journal, June 2013

384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
journal, April 2012

  • Haeger, Daniel A.; Young, Erin C.; Chung, Roy B.
  • Applied Physics Letters, Vol. 100, Issue 16
  • DOI: 10.1063/1.4704560

Modeling of Threading Dislocation Reduction in Growing GaN Layers
journal, May 2000

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
journal, January 2018

  • Romanczyk, Brian; Wienecke, Steven; Guidry, Matthew
  • IEEE Transactions on Electron Devices, Vol. 65, Issue 1
  • DOI: 10.1109/TED.2017.2770087

High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

  • Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 10
  • DOI: 10.1109/TED.2013.2266664

Determination of carrier diffusion length in GaN
journal, January 2015

  • Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza
  • Journal of Applied Physics, Vol. 117, Issue 1
  • DOI: 10.1063/1.4905506

Intrinsic electronic structure of threading dislocations in GaN
journal, January 2002

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
journal, December 2015

  • Qi, Meng; Nomoto, Kazuki; Zhu, Mingda
  • Applied Physics Letters, Vol. 107, Issue 23
  • DOI: 10.1063/1.4936891

High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate
journal, July 2007

  • Sato, Hitoshi; Tyagi, Anurag; Zhong, Hong
  • physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 4, p. 162-164
  • DOI: 10.1002/pssr.200701098

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy
journal, October 2005

  • Fang, Z. -Q.; Look, D. C.; Kim, D. H.
  • Applied Physics Letters, Vol. 87, Issue 18
  • DOI: 10.1063/1.2126145

The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices
journal, February 2000

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

Strain Induced Deep Electronic States around Threading Dislocations in GaN
journal, November 2004

Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%
journal, April 2004

  • Waltereit, P.; Sato, H.; Poblenz, C.
  • Applied Physics Letters, Vol. 84, Issue 15
  • DOI: 10.1063/1.1705721

High-breakdown-voltage pn-junction diodes on GaN substrates
journal, January 2007

Free-carrier and phonon properties of n - and p -type hexagonal GaN films measured by infrared ellipsometry
journal, September 2000

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
journal, May 2014

  • Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.
  • Journal of Applied Physics, Vol. 115, Issue 19
  • DOI: 10.1063/1.4874735

Electron Holography Studies of the Charge on Dislocations in GaN
journal, December 2002

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current
journal, June 2019

  • Usami, Shigeyoshi; Mayama, Norihito; Toda, Kazuya
  • Applied Physics Letters, Vol. 114, Issue 23
  • DOI: 10.1063/1.5097767

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
journal, November 2010

  • Hurni, Christophe A.; Bierwagen, Oliver; Lang, Jordan R.
  • Applied Physics Letters, Vol. 97, Issue 22
  • DOI: 10.1063/1.3521388

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
journal, September 2015

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN
journal, June 2015

  • Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.
  • Applied Physics Letters, Vol. 106, Issue 22
  • DOI: 10.1063/1.4922216

AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm
journal, December 2009

  • Tyagi, Anurag; Farrell, Robert M.; Kelchner, Kathryn M.
  • Applied Physics Express, Vol. 3, Issue 1
  • DOI: 10.1143/APEX.3.011002

The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors
journal, July 1949

Dislocation Scattering in GaN
journal, February 1999

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
journal, December 2011

  • Hatakeyama, Yoshitomo; Nomoto, Kazuki; Kaneda, Naoki
  • IEEE Electron Device Letters, Vol. 32, Issue 12
  • DOI: 10.1109/LED.2011.2167125

Dislocation core structures in Si-doped GaN
journal, December 2015

  • Rhode, S. L.; Horton, M. K.; Fu, W. Y.
  • Applied Physics Letters, Vol. 107, Issue 24
  • DOI: 10.1063/1.4937457

AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates
journal, February 2004

  • Nishida, Toshio; Makimoto, Toshiki; Saito, Hisao
  • Applied Physics Letters, Vol. 84, Issue 6
  • DOI: 10.1063/1.1646454

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
journal, January 2005

  • Kumakura, K.; Makimoto, T.; Kobayashi, N.
  • Applied Physics Letters, Vol. 86, Issue 5
  • DOI: 10.1063/1.1861116

Scattering of electrons at threading dislocations in GaN
journal, April 1998

  • Weimann, Nils G.; Eastman, Lester F.; Doppalapudi, Dharanipal
  • Journal of Applied Physics, Vol. 83, Issue 7
  • DOI: 10.1063/1.366585

Modeling of threading dislocation reduction in growing GaN layers
journal, October 2001

Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior
journal, May 1980

  • Jaeger, R. C.; Gaensslen, F. H.
  • IEEE Transactions on Electron Devices, Vol. 27, Issue 5
  • DOI: 10.1109/T-ED.1980.19956

GaN-Based RF Power Devices and Amplifiers
journal, February 2008

Vertical GaN Power Diodes With a Bilayer Edge Termination
journal, January 2016

  • Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.
  • IEEE Transactions on Electron Devices, Vol. 63, Issue 1, p. 419-425
  • DOI: 10.1109/TED.2015.2502186

Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
journal, December 2005

  • Sharma, R.; Pattison, P. M.; Masui, H.
  • Applied Physics Letters, Vol. 87, Issue 23
  • DOI: 10.1063/1.2139841

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
journal, April 2018

  • Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi
  • Applied Physics Letters, Vol. 112, Issue 18
  • DOI: 10.1063/1.5024704

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
journal, December 2017

  • Collins, K. C.; Armstrong, A. M.; Allerman, A. A.
  • Journal of Applied Physics, Vol. 122, Issue 23
  • DOI: 10.1063/1.5006814

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition
journal, May 2018

  • Lee, SeungGeun; Forman, Charles A.; Lee, Changmin
  • Applied Physics Express, Vol. 11, Issue 6
  • DOI: 10.7567/APEX.11.062703

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
journal, January 2004

  • Poblenz, C.; Waltereit, P.; Rajan, S.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 3
  • DOI: 10.1116/1.1752907