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Title: Modeling dislocation-related leakage currents in GaN p-n diodes

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106, USA
  2. Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1580624
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 24; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Robertson, C. A., Qwah, K. S., Wu, Y. -R., and Speck, J. S. Modeling dislocation-related leakage currents in GaN p-n diodes. United States: N. p., 2019. Web. doi:10.1063/1.5123394.
Robertson, C. A., Qwah, K. S., Wu, Y. -R., & Speck, J. S. Modeling dislocation-related leakage currents in GaN p-n diodes. United States. doi:10.1063/1.5123394.
Robertson, C. A., Qwah, K. S., Wu, Y. -R., and Speck, J. S. Sat . "Modeling dislocation-related leakage currents in GaN p-n diodes". United States. doi:10.1063/1.5123394.
@article{osti_1580624,
title = {Modeling dislocation-related leakage currents in GaN p-n diodes},
author = {Robertson, C. A. and Qwah, K. S. and Wu, Y. -R. and Speck, J. S.},
abstractNote = {},
doi = {10.1063/1.5123394},
journal = {Journal of Applied Physics},
number = 24,
volume = 126,
place = {United States},
year = {2019},
month = {12}
}

Journal Article:
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This content will become publicly available on December 30, 2020
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