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Title: Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1580610
Grant/Contract Number:  
FEOO11300
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Diamond and Related Materials
Additional Journal Information:
Journal Name: Diamond and Related Materials Journal Volume: 101 Journal Issue: C; Journal ID: ISSN 0925-9635
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Graves, A. R., Chaudhari, S., and Stinespring, C. D. Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing. Netherlands: N. p., 2020. Web. doi:10.1016/j.diamond.2019.107568.
Graves, A. R., Chaudhari, S., & Stinespring, C. D. Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing. Netherlands. doi:10.1016/j.diamond.2019.107568.
Graves, A. R., Chaudhari, S., and Stinespring, C. D. Wed . "Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing". Netherlands. doi:10.1016/j.diamond.2019.107568.
@article{osti_1580610,
title = {Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing},
author = {Graves, A. R. and Chaudhari, S. and Stinespring, C. D.},
abstractNote = {},
doi = {10.1016/j.diamond.2019.107568},
journal = {Diamond and Related Materials},
number = C,
volume = 101,
place = {Netherlands},
year = {2020},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 28, 2020
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