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Title: Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Abstract

In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of Al xGa 1-xAs, Al xIn 1-xP, and Al xGa yIn 1-x-yP using an AlCl 3 precursor. We study the growth of the Al xGa 1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl 3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al xGa 1-xAs, and for the first time by HVPE, Al xIn 1-xP and Al xGa yIn 1-x-yP. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [2];  [2];  [2]; ORCiD logo [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Kyma Technologies, Raleigh, NC (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1580495
Report Number(s):
NREL/JA-5900-75176
Journal ID: ISSN 2574-0962
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Energy Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 12; Journal ID: ISSN 2574-0962
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; solar energy; photovoltaics; III-V semiconductors; hydride vapor phase epitaxy; AlGaAs; AlInP; AlGaInP

Citation Formats

Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., and Ptak, Aaron J. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy. United States: N. p., 2019. Web. doi:10.1021/acsaem.9b02080.
Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., & Ptak, Aaron J. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy. United States. doi:10.1021/acsaem.9b02080.
Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., and Ptak, Aaron J. Thu . "Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy". United States. doi:10.1021/acsaem.9b02080.
@article{osti_1580495,
title = {Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy},
author = {Schulte, Kevin L. and Metaferia, Wondwosen and Simon, John D. and Guiling, David and Udwary, Kevin and Dodson, Gregg and Leach, Jacob H. and Ptak, Aaron J.},
abstractNote = {In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.},
doi = {10.1021/acsaem.9b02080},
journal = {ACS Applied Energy Materials},
number = 12,
volume = 2,
place = {United States},
year = {2019},
month = {12}
}

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This content will become publicly available on December 12, 2020
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