Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy
Abstract
In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.
- Authors:
-
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Kyma Technologies, Raleigh, NC (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1580495
- Report Number(s):
- NREL/JA-5900-75176
Journal ID: ISSN 2574-0962
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Energy Materials
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 12; Journal ID: ISSN 2574-0962
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; solar energy; photovoltaics; III-V semiconductors; hydride vapor phase epitaxy; AlGaAs; AlInP; AlGaInP
Citation Formats
Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., and Ptak, Aaron J. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy. United States: N. p., 2019.
Web. doi:10.1021/acsaem.9b02080.
Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., & Ptak, Aaron J. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy. United States. doi:10.1021/acsaem.9b02080.
Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., and Ptak, Aaron J. Thu .
"Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy". United States. doi:10.1021/acsaem.9b02080. https://www.osti.gov/servlets/purl/1580495.
@article{osti_1580495,
title = {Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy},
author = {Schulte, Kevin L. and Metaferia, Wondwosen and Simon, John D. and Guiling, David and Udwary, Kevin and Dodson, Gregg and Leach, Jacob H. and Ptak, Aaron J.},
abstractNote = {In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.},
doi = {10.1021/acsaem.9b02080},
journal = {ACS Applied Energy Materials},
number = 12,
volume = 2,
place = {United States},
year = {2019},
month = {12}
}
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Cited by: 2 works
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