Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Schulte, Kevin L.; Metaferia, Wondwosen; Simon, John D.; Guiling, David; Udwary, Kevin; Dodson, Gregg; Leach, Jacob H.; Ptak, Aaron J.

doi:10.1021/acsaem.9b02080

Title: Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Abstract

In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of Al_xGa_1-xAs, Al_xIn_1-xP, and Al_xGa_yIn_1-x-yP using an AlCl₃ precursor. We study the growth of the Al_xGa_1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl₃. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al_xGa_1-xAs, and for the first time by HVPE, Al_xIn_1-xP and Al_xGa_yIn_1-x-yP. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

Authors:

^[1];

^[1]; Simon, John D. ^[1]; Guiling, David ^[1]; Udwary, Kevin ^[2]; Dodson, Gregg ^[2]; Leach, Jacob H. ^[2];

^[1]

National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Kyma Technologies, Raleigh, NC (United States)

Publication Date:: 2019-12-12

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1580495

Report Number(s):: NREL/JA-5900-75176
Journal ID: ISSN 2574-0962; TRN: US2102320

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Energy Materials

Additional Journal Information:: Journal Volume: 2; Journal Issue: 12; Journal ID: ISSN 2574-0962

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; solar energy; photovoltaics; III-V semiconductors; hydride vapor phase epitaxy; AlGaAs; AlInP; AlGaInP

Citation Formats


                    Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., and Ptak, Aaron J. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy.  United States: N. p., 2019. 
Web.  doi:10.1021/acsaem.9b02080.

Copy to clipboard


                    Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., & Ptak, Aaron J. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy.  United States.  https://doi.org/10.1021/acsaem.9b02080

Copy to clipboard


                    Schulte, Kevin L., Metaferia, Wondwosen, Simon, John D., Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H., and Ptak, Aaron J. Thu .  
"Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy".  United States.  https://doi.org/10.1021/acsaem.9b02080.  https://www.osti.gov/servlets/purl/1580495.

Copy to clipboard


                    
@article{osti_1580495,

  title        = {Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy},

  author       = {Schulte, Kevin L. and Metaferia, Wondwosen and Simon, John D. and Guiling, David and Udwary, Kevin and Dodson, Gregg and Leach, Jacob H. and Ptak, Aaron J.},

  abstractNote = {In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.},

  doi          = {10.1021/acsaem.9b02080},

  journal      = {ACS Applied Energy Materials},

  number       = 12,

  volume       = 2,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1021/acsaem.9b02080

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
journal, December 2018

Simon, John; Schulte, Kevin; Horowitz, Kelsey
Crystals, Vol. 9, Issue 1
DOI: 10.3390/cryst9010003

VPE Growth of III/V Semiconductors
journal, August 1978

Stringfellow, G. B.
Annual Review of Materials Science, Vol. 8, Issue 1
DOI: 10.1146/annurev.ms.08.080178.000445

A 27.3% efficient Ga_0.5In_0.5P/GaAs tandem solar cell
journal, February 1990

Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.
Applied Physics Letters, Vol. 56, Issue 7, p. 623-625
DOI: 10.1063/1.102717

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell
journal, March 2018

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil
IEEE Journal of Photovoltaics, Vol. 8, Issue 2
DOI: 10.1109/JPHOTOV.2017.2778567

Recent advances in visible LED'S
journal, September 1975

Bhargava, R. N.
IEEE Transactions on Electron Devices, Vol. 22, Issue 9
DOI: 10.1109/T-ED.1975.18205

Multijunction Ga _0.5 In _0.5 P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy
journal, June 2018

Schulte, Kevin L.; Simon, John; Ptak, Aaron J.
Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 11
DOI: 10.1002/pip.3027

Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
journal, July 2019

Metaferia, Wondwosen; Schulte, Kevin L.; Simon, John
Nature Communications, Vol. 10, Issue 1
DOI: 10.1038/s41467-019-11341-3

Vapor-phase-epitaxial growth of n-AlAs/p-GaAs solar cells
journal, July 1977

Johnston, W. D.
Journal of Crystal Growth, Vol. 39, Issue 1
DOI: 10.1016/0022-0248(77)90159-2

Vapor Growth and Properties of AlAs
journal, January 1971

Ettenberg, M.; Sigai, A. G.; Dreeben, A.
Journal of The Electrochemical Society, Vol. 118, Issue 8
DOI: 10.1149/1.2408321

Properties of Vapor-Deposited Aluminum Arsenide
journal, January 1972

Sigai, A. G.; Abrahams, M. S.; Blanc, J.
Journal of The Electrochemical Society, Vol. 119, Issue 7
DOI: 10.1149/1.2404375

Conditions for VPE growth of AlxGa1−xAs alloys in inorganic transport systems
journal, November 1981

Bachem, K. -H.; Heyen, M.
Journal of Crystal Growth, Vol. 55, Issue 2
DOI: 10.1016/0022-0248(81)90031-2

Halogen VPE of AlGaAs for optoelectronic device applications
journal, April 1987

Deschler, M.; Cüppers, M.; Brauers, A.
Journal of Crystal Growth, Vol. 82, Issue 4
DOI: 10.1016/S0022-0248(87)80007-6

VPE Growth of n ‐ AlAs on GaAs for Heterojunction Devices
journal, October 1976

Johnston, W. D.; Callahan, W. M.
Journal of The Electrochemical Society, Vol. 123, Issue 10
DOI: 10.1149/1.2132631

Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth
journal, December 2003

Kumagai, Y.; Yamane, T.; Miyaji, T.
physica status solidi (c), Vol. 0, Issue 7
DOI: 10.1002/pssc.200303360

Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method
journal, June 1987

Hasegawa, Fumio; Yamamoto, Tadashi; Katayama, Koji
Journal of The Electrochemical Society, Vol. 134, Issue 6
DOI: 10.1149/1.2100706

Chloride VPE of Al _x Ga _{1- x} As by the Hydrogen Reduction Method Using a Metal Al Source
journal, February 1988

Hasegawa, Fumio; Katayama, Koji; Kobayashi, Ryuji
Japanese Journal of Applied Physics, Vol. 27, Issue Part 2, No. 2
DOI: 10.1143/JJAP.27.L254

Vapor Phase Epitaxy of AlGaAs by Direct Reaction between AlCl ₃ , GaCl ₃ and AsH ₃ /H ₂
journal, January 1989

Yamaguchi, Hiromu; Kobayashi, Ryuji; Jin, Yoshito
Japanese Journal of Applied Physics, Vol. 28, Issue Part 2, No. 1
DOI: 10.1143/JJAP.28.L4

Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3
journal, September 1991

Kobayashi, Ryuji; Jin, Yoshito; Hasegawa, Fumio
Journal of Crystal Growth, Vol. 113, Issue 3-4
DOI: 10.1016/0022-0248(91)90084-I

Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor
journal, October 2014

Baker, Troy; Mayo, Ashley; Veisi, Zeinab
Journal of Crystal Growth, Vol. 403
DOI: 10.1016/j.jcrysgro.2014.06.018

HVPE of Al Ga1−N layers on planar and trench patterned sapphire
journal, August 2012

Hagedorn, S.; Richter, E.; Zeimer, U.
Journal of Crystal Growth, Vol. 353, Issue 1
DOI: 10.1016/j.jcrysgro.2012.05.028

Organometallic vapor phase epitaxial growth of AlGaInP
journal, February 1985

Yuan, J. S.; Hsu, C. C.; Cohen, R. M.
Journal of Applied Physics, Vol. 57, Issue 4
DOI: 10.1063/1.334491

OMVPE growth of AlxGa1−xAs
journal, October 1981

Stringfellow, G. B.
Journal of Crystal Growth, Vol. 55, Issue 1
DOI: 10.1016/0022-0248(81)90269-4

Deviation of the AlGaAs lattice constant from Vegard's law
journal, May 2001

Zhou, D.; Usher, B. F.
Journal of Physics D: Applied Physics, Vol. 34, Issue 10
DOI: 10.1088/0022-3727/34/10/304

General transfer-matrix method for optical multilayer systems with coherent, partially coherent, and incoherent interference
journal, January 2002

Katsidis, Charalambos C.; Siapkas, Dimitrios I.
Applied Optics, Vol. 41, Issue 19
DOI: 10.1364/AO.41.003978

Optical properties of ${Al}_{x}$ ${Ga}_{1 - x}$ As alloys
journal, December 1988

Adachi, Sadao
Physical Review B, Vol. 38, Issue 17
DOI: 10.1103/PhysRevB.38.12345

High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides
journal, January 2018

Schulte, Kevin L.; Braun, Anna; Simon, John
Applied Physics Letters, Vol. 112, Issue 4
DOI: 10.1063/1.5013136

High brightness AlGaInP light-emitting diodes
journal, January 2002

Streubel, K.; Linder, N.; Wirth, R.
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2
DOI: 10.1109/2944.999187

Similar Records in DOE PAGES and OSTI.GOV collections:

Control of CuPt Ordering in GaInP Grown by Hydride Vapor Phase Epitaxy

Conference Schulte, Kevin L. ; Diercks, David R. ; Roberts, Dennice M. ; ...

We investigate the degree of ordering present in GaInP layers grown by dynamic hydride vapor phase epitaxy (D-HVPE) as a function of various growth conditions. We assess order parameter from both transmission electron and x-ray diffraction and compare these trends to the order parameter estimated by the photoluminescence-determined band gap in the GaInP layers. The degree of ordering increases with deposition temperature and the ratio of gas-phase group V to group III precursors in the reactor. We also investigate the effect of growth rate, demonstrating the capability of HVPE to suppress order through rapid growth rates. Such ordering dependences aremore »« less
https://doi.org/10.1109/PVSC45281.2020.9300918
Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

Journal Article Schulte, Kevin L. ; Diercks, David R. ; Roberts, Dennice M. ; ... - Journal of Applied Physics

We report a systematic study of CuPt-type ordering in hydride vapor phase epitaxy (HVPE)-grown Ga_0.5In_0.5P. Selected-area electron diffraction reveals ordering in samples grown on (001) GaAs substrates offcut toward (1more »« less
https://doi.org/10.1063/5.0010680

Full Text Available
Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

Journal Article Zheng, Qiye ; Kim, Honggyu ; Zhang, Runyu ; ... - Journal of Applied Physics

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to bemore »« less
https://doi.org/10.1063/1.4937273
Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

Journal Article Schulte, Kevin L. ; Diercks, David R. ; Guthrey, Harvey L. ; ... - Applied Physics Letters

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga_1-xIn_xP compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga_0.71In_0.29As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10⁶ cm^-2, a level that enables high-performance minority carrier devicesmore »« less
https://doi.org/10.1063/5.0061350
Dynamic Hydride Vapor Phase Epitaxy of III-V Materials for Photovoltaics Applications: Preprint

Conference Metaferia, Wondwosen ; McClure, Elisabeth L. ; Schulte, Kevin L. ; ...

We demonstrate the uniqueness of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) to deposit III-V materials for high efficiency and potentially low-cost photovoltaics applications. Unlike traditional HVPE, D-HVPE allows for the deposition of relatively complex heterostructures and devices at high growth rates. We recently achieved record growth rates > 500 µm/h for GaAs and >200 µm/h for GaInP in our D-HVPE, and have not yet reached a growth rate limit for either material. We grew single junction GaAs solar cells at growth rates up to 309 µm/h without significant degradation of solar cell performance. We also demonstrate growth of Al-containing III-Vmore »« less
Full Text Available

Similar Records

Title: Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Abstract

Citation Formats

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy journal, December 2018

VPE Growth of III/V Semiconductors journal, August 1978

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell journal, February 1990

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell journal, March 2018

Recent advances in visible LED'S journal, September 1975

Multijunction Ga 0.5 In 0.5 P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy journal, June 2018

Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy journal, July 2019

Vapor-phase-epitaxial growth of n-AlAs/p-GaAs solar cells journal, July 1977

Vapor Growth and Properties of AlAs journal, January 1971

Properties of Vapor-Deposited Aluminum Arsenide journal, January 1972

Conditions for VPE growth of AlxGa1−xAs alloys in inorganic transport systems journal, November 1981

Halogen VPE of AlGaAs for optoelectronic device applications journal, April 1987

VPE Growth of n ‐ AlAs on GaAs for Heterojunction Devices journal, October 1976

Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth journal, December 2003

Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method journal, June 1987

Chloride VPE of Al x Ga 1- x As by the Hydrogen Reduction Method Using a Metal Al Source journal, February 1988

Vapor Phase Epitaxy of AlGaAs by Direct Reaction between AlCl 3 , GaCl 3 and AsH 3 /H 2 journal, January 1989

Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3 journal, September 1991

Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor journal, October 2014

HVPE of Al Ga1−N layers on planar and trench patterned sapphire journal, August 2012

Organometallic vapor phase epitaxial growth of AlGaInP journal, February 1985

OMVPE growth of AlxGa1−xAs journal, October 1981

Deviation of the AlGaAs lattice constant from Vegard's law journal, May 2001

General transfer-matrix method for optical multilayer systems with coherent, partially coherent, and incoherent interference journal, January 2002

Optical properties of Al x Ga 1 − x As alloys journal, December 1988

High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides journal, January 2018

High brightness AlGaInP light-emitting diodes journal, January 2002

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
journal, December 2018

VPE Growth of III/V Semiconductors
journal, August 1978

A 27.3% efficient Ga_0.5In_0.5P/GaAs tandem solar cell
journal, February 1990

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell
journal, March 2018

Recent advances in visible LED'S
journal, September 1975

Multijunction Ga _0.5 In _0.5 P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy
journal, June 2018

Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
journal, July 2019

Vapor-phase-epitaxial growth of n-AlAs/p-GaAs solar cells
journal, July 1977

Vapor Growth and Properties of AlAs
journal, January 1971

Properties of Vapor-Deposited Aluminum Arsenide
journal, January 1972

Conditions for VPE growth of AlxGa1−xAs alloys in inorganic transport systems
journal, November 1981

Halogen VPE of AlGaAs for optoelectronic device applications
journal, April 1987

VPE Growth of n ‐ AlAs on GaAs for Heterojunction Devices
journal, October 1976

Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth
journal, December 2003

Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method
journal, June 1987

Chloride VPE of Al _x Ga _{1- x} As by the Hydrogen Reduction Method Using a Metal Al Source
journal, February 1988

Vapor Phase Epitaxy of AlGaAs by Direct Reaction between AlCl ₃ , GaCl ₃ and AsH ₃ /H ₂
journal, January 1989

Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3
journal, September 1991

Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor
journal, October 2014

HVPE of Al Ga1−N layers on planar and trench patterned sapphire
journal, August 2012

Organometallic vapor phase epitaxial growth of AlGaInP
journal, February 1985

OMVPE growth of AlxGa1−xAs
journal, October 1981

Deviation of the AlGaAs lattice constant from Vegard's law
journal, May 2001

General transfer-matrix method for optical multilayer systems with coherent, partially coherent, and incoherent interference
journal, January 2002

Optical properties of ${Al}_{x}$ ${Ga}_{1 - x}$ As alloys
journal, December 1988

High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides
journal, January 2018

High brightness AlGaInP light-emitting diodes
journal, January 2002