Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy
Abstract
Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 1015 cm–3, 8.4 × 1016 cm–3, and 8.4 × 1017 cm–3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ~8 × 1015 cm–3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm–3 and 8.4 × 1016 cm–3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.
- Authors:
-
- Texas State Univ., San Marcos, TX (United States)
- Publication Date:
- Research Org.:
- Texas State Univ., San Marcos, TX (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1580431
- Grant/Contract Number:
- EE0007541; AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Electronic Materials
- Additional Journal Information:
- Journal Volume: 46; Journal Issue: 9; Journal ID: ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; CdTe; heterostructures; photoluminescence; lifetime
Citation Formats
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., and Holtz, M. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy. United States: N. p., 2017.
Web. doi:10.1007/s11664-017-5646-y.
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., & Holtz, M. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy. United States. https://doi.org/10.1007/s11664-017-5646-y
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., and Holtz, M. Wed .
"Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy". United States. https://doi.org/10.1007/s11664-017-5646-y. https://www.osti.gov/servlets/purl/1580431.
@article{osti_1580431,
title = {Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy},
author = {Sohal, Sandeep and Edirisooriya, M. and Ogedengbe, O. S. and Petersen, J. E. and Swartz, C. H. and LeBlanc, E. G. and Myers, T. H. and Li, J. V. and Holtz, M.},
abstractNote = {Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 1015 cm–3, 8.4 × 1016 cm–3, and 8.4 × 1017 cm–3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ~8 × 1015 cm–3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm–3 and 8.4 × 1016 cm–3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.},
doi = {10.1007/s11664-017-5646-y},
journal = {Journal of Electronic Materials},
number = 9,
volume = 46,
place = {United States},
year = {Wed Jun 21 00:00:00 EDT 2017},
month = {Wed Jun 21 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
Investigations of the structural, optical properties and electronic structure of CdTe 1− x Se x films fabricated by RF magnetron sputtering
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