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Title: Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [3];  [4];  [2];  [1]
  1. Center for High-Technology MaterialsThe University of New Mexico Albuquerque NM 87106 USA
  2. Semiconductor Material and Device SciencesSandia National Laboratories Albuquerque NM 87123 USA
  3. Material, Physical, and Chemical SciencesSandia National Laboratories Albuquerque NM 87123 USA
  4. Advanced Materials ScienceSandia National Laboratories Albuquerque NM 87123 USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1580285
Grant/Contract Number:  
16/CJ000/10/04
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Name: Physica Status Solidi. A, Applications and Materials Science; Journal ID: ISSN 1862-6300
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Aragon, Andrew, Monavarian, Morteza, Stricklin, Isaac, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Armstrong, Andrew M., and Feezell, Daniel. Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes. Germany: N. p., 2019. Web. doi:10.1002/pssa.201900757.
Aragon, Andrew, Monavarian, Morteza, Stricklin, Isaac, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Armstrong, Andrew M., & Feezell, Daniel. Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes. Germany. doi:10.1002/pssa.201900757.
Aragon, Andrew, Monavarian, Morteza, Stricklin, Isaac, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Armstrong, Andrew M., and Feezell, Daniel. Mon . "Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes". Germany. doi:10.1002/pssa.201900757.
@article{osti_1580285,
title = {Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes},
author = {Aragon, Andrew and Monavarian, Morteza and Stricklin, Isaac and Pickrell, Greg and Crawford, Mary and Allerman, Andrew and Armstrong, Andrew M. and Feezell, Daniel},
abstractNote = {},
doi = {10.1002/pssa.201900757},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 22, 2020
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Works referenced in this record:

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