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Title: Defects in C d 3 A s 2 epilayers via molecular beam epitaxy and strategies for reducing them

Abstract

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of the topological semimetal Cd 3As 2, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to constraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched Zn xCd 1-xTe buffer layers, miscut substrates, and broadband illumination to study how dislocations, twins, and point defects influence the electron mobility of Cd 3As 2. In conclusion, a combination of defect suppression approaches produces Cd 3As 2 epilayers with electron mobilities upwards of 15000 cm 2/Vs at room temperature.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3];  [3];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States); Jeonbuk National Univ., Jeonju (Republic of Korea)
  3. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1580029
Report Number(s):
NREL/JA-5K00-74891
Journal ID: ISSN 2475-9953; PRMHAR
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 12; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; defects; molecular beam epitaxy; scanning electron microscopy; x-ray diffraction; II-VI semiconductors; multilayer thin films

Citation Formats

Rice, Anthony D., Park, Kwangwook, Hughes, Eamonn T., Mukherjee, Kunal, and Alberi, Kirstin M. Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.121201.
Rice, Anthony D., Park, Kwangwook, Hughes, Eamonn T., Mukherjee, Kunal, & Alberi, Kirstin M. Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them. United States. doi:10.1103/PhysRevMaterials.3.121201.
Rice, Anthony D., Park, Kwangwook, Hughes, Eamonn T., Mukherjee, Kunal, and Alberi, Kirstin M. Mon . "Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them". United States. doi:10.1103/PhysRevMaterials.3.121201.
@article{osti_1580029,
title = {Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them},
author = {Rice, Anthony D. and Park, Kwangwook and Hughes, Eamonn T. and Mukherjee, Kunal and Alberi, Kirstin M.},
abstractNote = {Molecular beam epitaxy offers an exciting avenue for investigating the behavior of the topological semimetal Cd3As2, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to constraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched ZnxCd1-xTe buffer layers, miscut substrates, and broadband illumination to study how dislocations, twins, and point defects influence the electron mobility of Cd3As2. In conclusion, a combination of defect suppression approaches produces Cd3As2 epilayers with electron mobilities upwards of 15000 cm2/Vs at room temperature.},
doi = {10.1103/PhysRevMaterials.3.121201},
journal = {Physical Review Materials},
number = 12,
volume = 3,
place = {United States},
year = {2019},
month = {12}
}

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Works referenced in this record:

Topological semimetals
journal, October 2016


Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111) B substrates
journal, April 1991

  • Chen, P.; Rajkumar, K. C.; Madhukar, A.
  • Applied Physics Letters, Vol. 58, Issue 16
  • DOI: 10.1063/1.105086

Tailoring Heterovalent Interface Formation with Light
journal, August 2017


Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd 3 As 2 films
journal, July 2019

  • Nakazawa, Y.; Uchida, M.; Nishihaya, S.
  • APL Materials, Vol. 7, Issue 7
  • DOI: 10.1063/1.5098529

Effects of incident UV light on the surface morphology of MBE grown GaAs
journal, March 2015


Suppression of compensating native defect formation during semiconductor processing via excess carriers
journal, June 2016

  • Alberi, K.; Scarpulla, M. A.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep27954

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes
journal, November 2017

  • Alberi, Kirstin; Scarpulla, Michael A.
  • Journal of Physics D: Applied Physics, Vol. 51, Issue 2
  • DOI: 10.1088/1361-6463/aa944c

Transport evidence for Fermi-arc-mediated chirality transfer in the Dirac semimetal Cd3As2
journal, July 2016

  • Moll, Philip J. W.; Nair, Nityan L.; Helm, Toni
  • Nature, Vol. 535, Issue 7611
  • DOI: 10.1038/nature18276

Molecular beam epitaxy of Cd 3 As 2 on a III-V substrate
journal, December 2016

  • Schumann, Timo; Goyal, Manik; Kim, Honggyu
  • APL Materials, Vol. 4, Issue 12
  • DOI: 10.1063/1.4972999

Three-dimensional Dirac semimetal and quantum transport in Cd 3 As 2
journal, September 2013


Quantum Transport Evidence for the Three-Dimensional Dirac Semimetal Phase in Cd 3 As 2
journal, December 2014


SOLID-VAPOR EQUILIBRIA FOR THE COMPOUNDS Cd 3 As 2 AND CdAs 2
journal, February 1960

  • Lyons, V. J.; Silvestri, V. J.
  • The Journal of Physical Chemistry, Vol. 64, Issue 2
  • DOI: 10.1021/j100831a022

Classification of stable three-dimensional Dirac semimetals with nontrivial topology
journal, September 2014

  • Yang, Bohm-Jung; Nagaosa, Naoto
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5898

The origins of twinning in cdTe
journal, May 1983

  • Vere, A. W.; Cole, S.; Williams, D. J.
  • Journal of Electronic Materials, Vol. 12, Issue 3
  • DOI: 10.1007/BF02650863

Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd 3 As 2
journal, February 2018

  • Goyal, Manik; Galletti, Luca; Salmani-Rezaie, Salva
  • APL Materials, Vol. 6, Issue 2
  • DOI: 10.1063/1.5016866

Observation of a three-dimensional topological Dirac semimetal phase in high-mobility Cd3As2
journal, May 2014

  • Neupane, Madhab; Xu, Su-Yang; Sankar, Raman
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms4786

Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs
journal, November 1989

  • York, P. K.; Eden, J. G.; Coleman, J. J.
  • Journal of Applied Physics, Vol. 66, Issue 10
  • DOI: 10.1063/1.344467

Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd 3 As 2
journal, January 2018


Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2
journal, November 2014

  • Liang, Tian; Gibson, Quinn; Ali, Mazhar N.
  • Nature Materials, Vol. 14, Issue 3
  • DOI: 10.1038/nmat4143

An experimentally convenient configuration for electron channeling contrast imaging
journal, May 1999


Surface states of strained thin films of the Dirac semimetal Cd 3 As 2
journal, June 2019


Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3
journal, February 2018


The Crystal and Electronic Structures of Cd 3 As 2 , the Three-Dimensional Electronic Analogue of Graphene
journal, March 2014

  • Ali, Mazhar N.; Gibson, Quinn; Jeon, Sangjun
  • Inorganic Chemistry, Vol. 53, Issue 8
  • DOI: 10.1021/ic403163d

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications
journal, May 2017