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Title: Magnetoelastoresistance in WTe 2: Exploring electronic structure and extremely large magnetoresistance under strain

Abstract

Strain describes the deformation of a material as a result of applied stress. It has been widely employed to probe transport properties of materials, ranging from semiconductors to correlated materials. In order to understand, and eventually control, transport behavior under strain, it is vital to quantify the effects of strain on the electronic bandstructure, carrier density, and mobility. In this work, we demonstrate that much information can be obtained by exploring magnetoelastoresistance (MER), which refers to magnetic field-driven changes of the elastoresistance. We use this powerful approach to study the combined effect of strain and magnetic fields on the semimetallic transition metal dichalcogenide W T e 2 . We discover that WTe 2shows a large and temperature-nonmonotonic elastoresistance, driven by uniaxial stress, that can be tuned by magnetic field. Using first-principle and analytical low-energy model calculations, we offer a semiquantitative understanding of our experimental observations. We show that in W T e 2 , the strain-induced change of the carrier density dominates the observed elastoresistance. In addition, the change of the mobilities can be directly accessed by using MER. Our analysis also reveals the importance of a heavy-hole band near the Fermi level on the elastoresistance at intermediate temperatures. Systematic understanding of strain effects in single crystals of correlated materials is important for future applications, such as strain tuning of bulk phases and fabrication of devices controlled by strain.

Authors:
 [1];  [2];  [1];  [1]; ORCiD logo [1]
  1. Ames Lab., and Iowa State Univ., Ames, IA (United States)
  2. Ames Lab., Ames, IA (United States)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation
OSTI Identifier:
1579932
Alternate Identifier(s):
OSTI ID: 1576801
Report Number(s):
IS-J-10079
Journal ID: ISSN 0027-8424
Grant/Contract Number:  
GBMF4411; AC02-07CH11358
Resource Type:
Accepted Manuscript
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Volume: 116; Journal Issue: 51; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; strain; transition metal dichalcogenides; WTe2; magnetoelastoresistance

Citation Formats

Jo, Na Hyun, Wang, Lin-Lin, Orth, Peter P., Bud’ko, Sergey L., and Canfield, Paul C. Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain. United States: N. p., 2019. Web. doi:10.1073/pnas.1910695116.
Jo, Na Hyun, Wang, Lin-Lin, Orth, Peter P., Bud’ko, Sergey L., & Canfield, Paul C. Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain. United States. doi:10.1073/pnas.1910695116.
Jo, Na Hyun, Wang, Lin-Lin, Orth, Peter P., Bud’ko, Sergey L., and Canfield, Paul C. Mon . "Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain". United States. doi:10.1073/pnas.1910695116.
@article{osti_1579932,
title = {Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain},
author = {Jo, Na Hyun and Wang, Lin-Lin and Orth, Peter P. and Bud’ko, Sergey L. and Canfield, Paul C.},
abstractNote = {Strain describes the deformation of a material as a result of applied stress. It has been widely employed to probe transport properties of materials, ranging from semiconductors to correlated materials. In order to understand, and eventually control, transport behavior under strain, it is vital to quantify the effects of strain on the electronic bandstructure, carrier density, and mobility. In this work, we demonstrate that much information can be obtained by exploring magnetoelastoresistance (MER), which refers to magnetic field-driven changes of the elastoresistance. We use this powerful approach to study the combined effect of strain and magnetic fields on the semimetallic transition metal dichalcogenideWTe2. We discover that WTe2shows a large and temperature-nonmonotonic elastoresistance, driven by uniaxial stress, that can be tuned by magnetic field. Using first-principle and analytical low-energy model calculations, we offer a semiquantitative understanding of our experimental observations. We show that inWTe2, the strain-induced change of the carrier density dominates the observed elastoresistance. In addition, the change of the mobilities can be directly accessed by using MER. Our analysis also reveals the importance of a heavy-hole band near the Fermi level on the elastoresistance at intermediate temperatures. Systematic understanding of strain effects in single crystals of correlated materials is important for future applications, such as strain tuning of bulk phases and fabrication of devices controlled by strain.},
doi = {10.1073/pnas.1910695116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 51,
volume = 116,
place = {United States},
year = {2019},
month = {12}
}

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