Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Nagaoka, Akira; Han, Kyu -Bum; Misra, Sudhajit; Wilenski, Thomas; Sparks, Taylor D.; Scarpulla, Michael A.

doi:10.1016/j.jcrysgro.2017.03.002

Title: Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Abstract

We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. As a result, the p-type doping concentration varied from 6 × 10¹⁵ to 8 × 10¹⁶ cm^–3 with increasing As concentration, with an apparent doping limit just below 10¹⁷ cm^–3.

Authors:

Nagaoka, Akira ^[1]; Han, Kyu -Bum ^[1]; Misra, Sudhajit ^[1]; Wilenski, Thomas ^[1]; Sparks, Taylor D. ^[1]; Scarpulla, Michael A. ^[1]

Univ. of Utah, Salt Lake City, UT (United States)

Publication Date:: Thu Mar 02 00:00:00 EST 2017

Research Org.:: Stanford Univ., CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1579803

Alternate Identifier(s):: OSTI ID: 1413381

Grant/Contract Number:: EE0004946

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: Journal Volume: 467; Journal Issue: C; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; A1. Growth interface; A2. Growth from solutions; A2. THM; B2 CdTe

Citation Formats


                    Nagaoka, Akira, Han, Kyu -Bum, Misra, Sudhajit, Wilenski, Thomas, Sparks, Taylor D., and Scarpulla, Michael A. Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method.  United States: N. p., 2017. 
Web.  doi:10.1016/j.jcrysgro.2017.03.002.

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                    Nagaoka, Akira, Han, Kyu -Bum, Misra, Sudhajit, Wilenski, Thomas, Sparks, Taylor D., & Scarpulla, Michael A. Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method.  United States.  https://doi.org/10.1016/j.jcrysgro.2017.03.002

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                    Nagaoka, Akira, Han, Kyu -Bum, Misra, Sudhajit, Wilenski, Thomas, Sparks, Taylor D., and Scarpulla, Michael A. Thu .  
"Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method".  United States.  https://doi.org/10.1016/j.jcrysgro.2017.03.002.  https://www.osti.gov/servlets/purl/1579803.

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@article{osti_1579803,

  title        = {Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method},

  author       = {Nagaoka, Akira and Han, Kyu -Bum and Misra, Sudhajit and Wilenski, Thomas and Sparks, Taylor D. and Scarpulla, Michael A.},

  abstractNote = {We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. As a result, the p-type doping concentration varied from 6 × 1015 to 8 × 1016 cm–3 with increasing As concentration, with an apparent doping limit just below 1017 cm–3.},

  doi          = {10.1016/j.jcrysgro.2017.03.002},

  journal      = {Journal of Crystal Growth},

  number       = C,

  volume       = 467,

  place        = {United States},

  year         = {Thu Mar 02 00:00:00 EST 2017},

  month        = {Thu Mar 02 00:00:00 EST 2017}

}

Copy to clipboard

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Works referencing / citing this record:

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
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Title: Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Abstract

Citation Formats

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