skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-throughput fabrication and semi-automated characterization of oxide thin film transistors

Abstract

High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatiallyresolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semiautomated characterization using sputtered oxide TFTs as a case study. Here, we show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstratemore » that high throughput methods can accelerate the investigation of TFTs and other electronic devices.« less

Authors:
 [1];  [1];  [2];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States). Materials Science Center
  2. Fudan Univ., Shanghai (China)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; Science and Technology Commission of Shanghai Municipality; National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1579643
Report Number(s):
NREL/JA-5K00-74967
Journal ID: ISSN 1674-1056
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Chinese Physics. B
Additional Journal Information:
Journal Volume: 29; Journal Issue: 1; Journal ID: ISSN 1674-1056
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; combinatorial sputtering; IZO TFT; channel gradient; oxygen content

Citation Formats

Han, Yanbing, Bauers, Sage, Zhang, Qun, and Zakutayev, Andriy. High-throughput fabrication and semi-automated characterization of oxide thin film transistors. United States: N. p., 2019. Web. doi:10.1088/1674-1056/ab5d05.
Han, Yanbing, Bauers, Sage, Zhang, Qun, & Zakutayev, Andriy. High-throughput fabrication and semi-automated characterization of oxide thin film transistors. United States. doi:https://doi.org/10.1088/1674-1056/ab5d05
Han, Yanbing, Bauers, Sage, Zhang, Qun, and Zakutayev, Andriy. Fri . "High-throughput fabrication and semi-automated characterization of oxide thin film transistors". United States. doi:https://doi.org/10.1088/1674-1056/ab5d05. https://www.osti.gov/servlets/purl/1579643.
@article{osti_1579643,
title = {High-throughput fabrication and semi-automated characterization of oxide thin film transistors},
author = {Han, Yanbing and Bauers, Sage and Zhang, Qun and Zakutayev, Andriy},
abstractNote = {High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatiallyresolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semiautomated characterization using sputtered oxide TFTs as a case study. Here, we show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.},
doi = {10.1088/1674-1056/ab5d05},
journal = {Chinese Physics. B},
number = 1,
volume = 29,
place = {United States},
year = {2019},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Device Isolation in Hybrid Field-Effect Transistors by Semiconductor Micropatterning Using Picosecond Lasers
journal, October 2014


High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach
journal, August 2009

  • Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko
  • Applied Physics Letters, Vol. 95, Issue 7
  • DOI: 10.1063/1.3206948

COMBIgor: Data-Analysis Package for Combinatorial Materials Science
journal, May 2019

  • Talley, Kevin R.; Bauers, Sage R.; Melamed, Celeste L.
  • ACS Combinatorial Science, Vol. 21, Issue 7
  • DOI: 10.1021/acscombsci.9b00077

Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor
journal, March 2011

  • Lee, Sang Yeol; Kim, Do Hyung; Chong, Eugene
  • Applied Physics Letters, Vol. 98, Issue 12
  • DOI: 10.1063/1.3570641

Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors
journal, June 2009

  • Kim, Gun Hee; Du Ahn, Byung; Shin, Hyun Soo
  • Applied Physics Letters, Vol. 94, Issue 23
  • DOI: 10.1063/1.3151827

Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies
journal, March 2017

  • Green, M. L.; Choi, C. L.; Hattrick-Simpers, J. R.
  • Applied Physics Reviews, Vol. 4, Issue 1
  • DOI: 10.1063/1.4977487

The 2019 materials by design roadmap
journal, October 2018

  • Alberi, Kirstin; Nardelli, Marco Buongiorno; Zakutayev, Andriy
  • Journal of Physics D: Applied Physics, Vol. 52, Issue 1
  • DOI: 10.1088/1361-6463/aad926

Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach
journal, August 2012

  • Oh, Seungha; Seob Yang, Bong; Jang Kim, Yoon
  • Applied Physics Letters, Vol. 101, Issue 9
  • DOI: 10.1063/1.4748884

Optoelectronic Properties of Strontium and Barium Copper Sulfides Prepared by Combinatorial Sputtering
journal, September 2017


Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stamps
journal, February 2003

  • Zaumseil, Jana; Someya, Takao; Bao, Zhenan
  • Applied Physics Letters, Vol. 82, Issue 5, p. 793-795
  • DOI: 10.1063/1.1541941

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
journal, May 2012


Accelerated development of CuSbS 2 thin film photovoltaic device prototypes : Accelerated development of CuSbS
journal, February 2016

  • Welch, Adam W.; Baranowski, Lauryn L.; Zawadzki, Pawel
  • Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 7
  • DOI: 10.1002/pip.2735

Combinatorial Reactive Sputtering of In 2 S 3 as an Alternative Contact Layer for Thin Film Solar Cells
journal, May 2016

  • Siol, Sebastian; Dhakal, Tara P.; Gudavalli, Ganesh S.
  • ACS Applied Materials & Interfaces, Vol. 8, Issue 22
  • DOI: 10.1021/acsami.6b02213

Combinatorial study of NaF addition in CIGSe films for high efficiency solar cells: Combinatorial study of NaF addition in CIGSe films
journal, December 2013

  • Eid, Jessica; Liang, Haifan; Gereige, Issam
  • Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 3
  • DOI: 10.1002/pip.2419

Combinatorial study of zinc tin oxide thin-film transistors
journal, January 2008

  • McDowell, M. G.; Sanderson, R. J.; Hill, I. G.
  • Applied Physics Letters, Vol. 92, Issue 1
  • DOI: 10.1063/1.2828862

An Approach to Simultaneously Test Multiple Devices for High-Throughput Production of Thin-Film Electronics
journal, March 2016


Combinatorial Nitrogen Gradients in Sputtered Thin Films
journal, May 2018


Effects of Metal Electrode on the Electrical Performance of Amorphous In–Ga–Zn–O Thin Film Transistor
journal, January 2012

  • Yim, Jung-Ryoul; Jung, Sung-Yup; Yeon, Han-Wool
  • Japanese Journal of Applied Physics, Vol. 51, Issue 1R
  • DOI: 10.7567/JJAP.51.011401