High-throughput fabrication and semi-automated characterization of oxide thin film transistors

doi:10.1088/1674-1056/ab5d05

This content will become publicly available on November 29, 2020

Title: High-throughput fabrication and semi-automated characterization of oxide thin film transistors

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Abstract

High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatiallyresolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semiautomated characterization using sputtered oxide TFTs as a case study. Here, we show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstratemore »« less

Authors:

Han, Yanbing ^[1]; Bauers, Sage ^[1]; Zhang, Qun ^[2]; Zakutayev, Andriy ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States). Materials Science Center
Fudan Univ., Shanghai (China)

Publication Date:: 2019-11-29

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Laboratory Directed Research and Development (LDRD) Program; Science and Technology Commission of Shanghai Municipality; National Natural Science Foundation of China (NNSFC)

OSTI Identifier:: 1579643

Report Number(s):: NREL/JA-5K00-74967
Journal ID: ISSN 1674-1056

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Chinese Physics. B

Additional Journal Information:: Journal Name: Chinese Physics. B; Journal ID: ISSN 1674-1056

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; combinatorial sputtering; IZO TFT; channel gradient; oxygen content

Citation Formats


                    Han, Yanbing, Bauers, Sage, Zhang, Qun, and Zakutayev, Andriy. High-throughput fabrication and semi-automated characterization of oxide thin film transistors.  United States: N. p., 2019. 
        Web.  doi:10.1088/1674-1056/ab5d05.

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                    Han, Yanbing, Bauers, Sage, Zhang, Qun, & Zakutayev, Andriy. High-throughput fabrication and semi-automated characterization of oxide thin film transistors.  United States.  doi:10.1088/1674-1056/ab5d05.

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                    Han, Yanbing, Bauers, Sage, Zhang, Qun, and Zakutayev, Andriy. Fri .  
        "High-throughput fabrication and semi-automated characterization of oxide thin film transistors".  United States.  doi:10.1088/1674-1056/ab5d05.

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@article{osti_1579643,

  title        = {High-throughput fabrication and semi-automated characterization of oxide thin film transistors},

  author       = {Han, Yanbing and Bauers, Sage and Zhang, Qun and Zakutayev, Andriy},

  abstractNote = {High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatiallyresolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semiautomated characterization using sputtered oxide TFTs as a case study. Here, we show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.},

  doi          = {10.1088/1674-1056/ab5d05},

  journal      = {Chinese Physics. B},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {11}

}

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