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Title: Radiative Efficiency and Charge-Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures

Abstract

CdTe-based photovoltaics is a rapidly developing energy technology with one of the lowest levelized costs of electricity. But nonradiative Shockley-Read-Hall (SRH) recombination limits the efficiency of CdTe solar cells. Partial mitigation of bulk and grain-boundary SRH recombination was achieved by alloying CdTe with Se, and CdSe xTe 1-x absorbers are used in high-efficiency solar cells. Recently, interface recombination was significantly reduced with alumina passivation, but other properties of Al 2O 3/CdSe xTe 1-x/Al 2O 3 heterostructures have not yet been investigated. Herein, further progress in understanding and developing polycrystalline heterostructures with x = 0.2 is reported. It is shown that external photoluminescence quantum yield is increased to 0.2%, quasi-Fermi-level splitting to 950 mV, minority carrier lifetimes to 750 ns, and mobility to 100 cm 2 Vs -1. Such polycrystalline CdSe xTe 1-x electronic characteristics match or exceed CdTe single-crystal properties. The resulting charge-carrier diffusion length of ≈14 $$\mu$$m is several times greater than the absorber thickness in test structures and in typical CdTe solar cells. Herein, with passivation and absorbers, polycrystalline CdSeTe solar cell open-circuit voltage is increased from the current 76% of the Shockley-Queisser limit to 82%, or close to 1 V is reported.

Authors:
ORCiD logo [1];  [1];  [2];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Vilnius Univ., Vilnius (Lithuania). Inst. of Photonics and Nanotechnology
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1579640
Alternate Identifier(s):
OSTI ID: 1577408
Report Number(s):
NREL/JA-5900-75637
Journal ID: ISSN 1862-6254
Grant/Contract Number:  
AC36-08GO28308; EE0008552
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Name: Physica Status Solidi rrl; Journal ID: ISSN 1862-6254
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; charge-carrier transport; luminescence; passivation; thin film solar cells

Citation Formats

Kuciauskas, Darius, Moseley, John, Scajev, Patrik, and Albin, David S. Radiative Efficiency and Charge-Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures. United States: N. p., 2019. Web. doi:10.1002/pssr.201900606.
Kuciauskas, Darius, Moseley, John, Scajev, Patrik, & Albin, David S. Radiative Efficiency and Charge-Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures. United States. doi:10.1002/pssr.201900606.
Kuciauskas, Darius, Moseley, John, Scajev, Patrik, and Albin, David S. Wed . "Radiative Efficiency and Charge-Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures". United States. doi:10.1002/pssr.201900606.
@article{osti_1579640,
title = {Radiative Efficiency and Charge-Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures},
author = {Kuciauskas, Darius and Moseley, John and Scajev, Patrik and Albin, David S.},
abstractNote = {CdTe-based photovoltaics is a rapidly developing energy technology with one of the lowest levelized costs of electricity. But nonradiative Shockley-Read-Hall (SRH) recombination limits the efficiency of CdTe solar cells. Partial mitigation of bulk and grain-boundary SRH recombination was achieved by alloying CdTe with Se, and CdSexTe1-x absorbers are used in high-efficiency solar cells. Recently, interface recombination was significantly reduced with alumina passivation, but other properties of Al2O3/CdSexTe1-x/Al2O3 heterostructures have not yet been investigated. Herein, further progress in understanding and developing polycrystalline heterostructures with x = 0.2 is reported. It is shown that external photoluminescence quantum yield is increased to 0.2%, quasi-Fermi-level splitting to 950 mV, minority carrier lifetimes to 750 ns, and mobility to 100 cm2 Vs-1. Such polycrystalline CdSexTe1-x electronic characteristics match or exceed CdTe single-crystal properties. The resulting charge-carrier diffusion length of ≈14 $\mu$m is several times greater than the absorber thickness in test structures and in typical CdTe solar cells. Herein, with passivation and absorbers, polycrystalline CdSeTe solar cell open-circuit voltage is increased from the current 76% of the Shockley-Queisser limit to 82%, or close to 1 V is reported.},
doi = {10.1002/pssr.201900606},
journal = {Physica Status Solidi rrl},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {11}
}

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