Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal
Abstract
Abstract Low‐dimensional magnetism has been boosted by the recent discovery of the ferromagnetism in layered two‐dimensional (2D) semiconductors. Although the macroscopic magnetic moments of 2D ferromagnets are weak, the anomalous Hall effect (AHE) can serve as a versatile electric probe to their magnetic properties. Here, the nonvolatile electric‐field manipulation of the AHE in an ultrathin metallic ferromagnet with perpendicular magnetic anisotropy at room temperature is reported, which is achieved by the electrostatic modulation of the longitudinal resistivity via a ferroelectric substrate without varying magnetization. Therefore, this work demonstrates an electric‐field‐controlled room‐temperature memory device based on the zero‐magnetic‐field anomalous Hall resistance of an ultrathin ferromagnet. More importantly, the experimental results disentangle magnetization and anomalous Hall resistance. As a result, the study reveals a linear decrease of anomalous Hall conductivity with normal conductivity, which is distinct from previous scaling relations. Accordingly, this work manifests a universe avenue to harnessing the AHE in low‐dimensional magnetic materials.
- Authors:
-
[1]
- School of Materials Science and Engineering Beihang University Beijing 100191 China
- Department of Materials Science and Engineering Harbin Institute of Technology Shenzhen 518055 China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1579451
- Grant/Contract Number:
- DE‐AC02‐05CH11231
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Name: Advanced Electronic Materials Journal Volume: 6 Journal Issue: 2; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Feng, Zexin, Yan, Han, Wang, Xiaoning, Guo, Huixin, Qin, Peixin, Zhou, Xiaorong, Chen, Zuhuang, Wang, Hui, Jiao, Zhengying, Leng, Zhaoguogang, Hu, Zexiang, Zhang, Xin, Wu, Haojiang, Chen, Hongyu, Wang, Jingmin, Zhang, Tianli, Jiang, Chengbao, and Liu, Zhiqi. Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal. United States: N. p., 2019.
Web. doi:10.1002/aelm.201901084.
Feng, Zexin, Yan, Han, Wang, Xiaoning, Guo, Huixin, Qin, Peixin, Zhou, Xiaorong, Chen, Zuhuang, Wang, Hui, Jiao, Zhengying, Leng, Zhaoguogang, Hu, Zexiang, Zhang, Xin, Wu, Haojiang, Chen, Hongyu, Wang, Jingmin, Zhang, Tianli, Jiang, Chengbao, & Liu, Zhiqi. Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal. United States. https://doi.org/10.1002/aelm.201901084
Feng, Zexin, Yan, Han, Wang, Xiaoning, Guo, Huixin, Qin, Peixin, Zhou, Xiaorong, Chen, Zuhuang, Wang, Hui, Jiao, Zhengying, Leng, Zhaoguogang, Hu, Zexiang, Zhang, Xin, Wu, Haojiang, Chen, Hongyu, Wang, Jingmin, Zhang, Tianli, Jiang, Chengbao, and Liu, Zhiqi. Mon .
"Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal". United States. https://doi.org/10.1002/aelm.201901084.
@article{osti_1579451,
title = {Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal},
author = {Feng, Zexin and Yan, Han and Wang, Xiaoning and Guo, Huixin and Qin, Peixin and Zhou, Xiaorong and Chen, Zuhuang and Wang, Hui and Jiao, Zhengying and Leng, Zhaoguogang and Hu, Zexiang and Zhang, Xin and Wu, Haojiang and Chen, Hongyu and Wang, Jingmin and Zhang, Tianli and Jiang, Chengbao and Liu, Zhiqi},
abstractNote = {Abstract Low‐dimensional magnetism has been boosted by the recent discovery of the ferromagnetism in layered two‐dimensional (2D) semiconductors. Although the macroscopic magnetic moments of 2D ferromagnets are weak, the anomalous Hall effect (AHE) can serve as a versatile electric probe to their magnetic properties. Here, the nonvolatile electric‐field manipulation of the AHE in an ultrathin metallic ferromagnet with perpendicular magnetic anisotropy at room temperature is reported, which is achieved by the electrostatic modulation of the longitudinal resistivity via a ferroelectric substrate without varying magnetization. Therefore, this work demonstrates an electric‐field‐controlled room‐temperature memory device based on the zero‐magnetic‐field anomalous Hall resistance of an ultrathin ferromagnet. More importantly, the experimental results disentangle magnetization and anomalous Hall resistance. As a result, the study reveals a linear decrease of anomalous Hall conductivity with normal conductivity, which is distinct from previous scaling relations. Accordingly, this work manifests a universe avenue to harnessing the AHE in low‐dimensional magnetic materials.},
doi = {10.1002/aelm.201901084},
journal = {Advanced Electronic Materials},
number = 2,
volume = 6,
place = {United States},
year = {Mon Dec 16 00:00:00 EST 2019},
month = {Mon Dec 16 00:00:00 EST 2019}
}
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