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Title: From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy

Abstract

The current approaches used to fabricate hexagonal boron nitrides (h-BN) from boron trioxide and urea always results in contamination of the h-BN product with carbon/oxygen. Thus, discovering a facile way of mass producing high-purity h-BN remains a challenge. A simple yet highly efficient thermal treatment approach to large-scale fabrication of nanoporous h-BN with high yield, high purity, and high crystallinity is described using NaNH2 and NaBH4 as the oxygen- and carbon-free precursors. The unique properties of inorganic metal salts, i.e., high melting point and strong electrostatic interaction with carbon substrates, render this strategy suitable for the production of homogeneous h-BN/mesoporous carbon and h-BN/carbon nanotube heterostructures of high crystallinity, high h-BN dispersity, and with a strong interfacial effect. These unique features make them promising candidates for supercapacitor applications, resulting a significantly enhanced specific capacitance. This study provides new insight into the fabrication of high-purity h-BN and h-BN-based heterostructures thus expanding their application in the field of energy storage and transformation.

Authors:
 [1];  [2];  [3];  [4];  [3];  [5];  [3];  [6];  [7]; ORCiD logo [2]
  1. Zhejiang Univ., Hangzhou (China). Key Lab. of Biomass Chemical Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  3. Univ. of Tennessee, Knoxville, TN (United States)
  4. Univ. of Tennessee, Knoxville, TN (United States). JIAM Microscopy Center
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  6. Univ. of California, Riverside, CA (United States)
  7. Zhejiang Univ., Hangzhou (China). Key Lab. of Biomass Chemical Engineering
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Zhejiang Provincial Natural Science Foundation
OSTI Identifier:
1767507
Alternate Identifier(s):
OSTI ID: 1577908; OSTI ID: 1810024
Grant/Contract Number:  
AC05-00OR22725; 21436007; 21706228; LR17B060002; AC05‐00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 50; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; catalysis (heterogeneous); solar (fuels); energy storage (including batteries and capacitors); hydrogen and fuel cells; solar electrodes; mechanical behavior; charge transport; materials and chemistry by design; synthesis (novel materials); boron nitride; heterostructures; mesoporous carbon; supercapacitors

Citation Formats

Chen, Hao, Yang, Zhenzhen, Guo, Wei, Dunlap, John R., Liang, Jiyuan, Sun, Yifan, Jie, Kecheng, Wang, Song, Fu, Jie, and Dai, Sheng. From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy. United States: N. p., 2019. Web. doi:10.1002/adfm.201906284.
Chen, Hao, Yang, Zhenzhen, Guo, Wei, Dunlap, John R., Liang, Jiyuan, Sun, Yifan, Jie, Kecheng, Wang, Song, Fu, Jie, & Dai, Sheng. From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy. United States. https://doi.org/10.1002/adfm.201906284
Chen, Hao, Yang, Zhenzhen, Guo, Wei, Dunlap, John R., Liang, Jiyuan, Sun, Yifan, Jie, Kecheng, Wang, Song, Fu, Jie, and Dai, Sheng. Fri . "From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy". United States. https://doi.org/10.1002/adfm.201906284. https://www.osti.gov/servlets/purl/1767507.
@article{osti_1767507,
title = {From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy},
author = {Chen, Hao and Yang, Zhenzhen and Guo, Wei and Dunlap, John R. and Liang, Jiyuan and Sun, Yifan and Jie, Kecheng and Wang, Song and Fu, Jie and Dai, Sheng},
abstractNote = {The current approaches used to fabricate hexagonal boron nitrides (h-BN) from boron trioxide and urea always results in contamination of the h-BN product with carbon/oxygen. Thus, discovering a facile way of mass producing high-purity h-BN remains a challenge. A simple yet highly efficient thermal treatment approach to large-scale fabrication of nanoporous h-BN with high yield, high purity, and high crystallinity is described using NaNH2 and NaBH4 as the oxygen- and carbon-free precursors. The unique properties of inorganic metal salts, i.e., high melting point and strong electrostatic interaction with carbon substrates, render this strategy suitable for the production of homogeneous h-BN/mesoporous carbon and h-BN/carbon nanotube heterostructures of high crystallinity, high h-BN dispersity, and with a strong interfacial effect. These unique features make them promising candidates for supercapacitor applications, resulting a significantly enhanced specific capacitance. This study provides new insight into the fabrication of high-purity h-BN and h-BN-based heterostructures thus expanding their application in the field of energy storage and transformation.},
doi = {10.1002/adfm.201906284},
journal = {Advanced Functional Materials},
number = 50,
volume = 29,
place = {United States},
year = {Fri Sep 27 00:00:00 EDT 2019},
month = {Fri Sep 27 00:00:00 EDT 2019}
}

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