From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy
Abstract
The current approaches used to fabricate hexagonal boron nitrides (h-BN) from boron trioxide and urea always results in contamination of the h-BN product with carbon/oxygen. Thus, discovering a facile way of mass producing high-purity h-BN remains a challenge. A simple yet highly efficient thermal treatment approach to large-scale fabrication of nanoporous h-BN with high yield, high purity, and high crystallinity is described using NaNH2 and NaBH4 as the oxygen- and carbon-free precursors. The unique properties of inorganic metal salts, i.e., high melting point and strong electrostatic interaction with carbon substrates, render this strategy suitable for the production of homogeneous h-BN/mesoporous carbon and h-BN/carbon nanotube heterostructures of high crystallinity, high h-BN dispersity, and with a strong interfacial effect. These unique features make them promising candidates for supercapacitor applications, resulting a significantly enhanced specific capacitance. This study provides new insight into the fabrication of high-purity h-BN and h-BN-based heterostructures thus expanding their application in the field of energy storage and transformation.
- Authors:
-
- Zhejiang Univ., Hangzhou (China). Key Lab. of Biomass Chemical Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States). JIAM Microscopy Center
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of California, Riverside, CA (United States)
- Zhejiang Univ., Hangzhou (China). Key Lab. of Biomass Chemical Engineering
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Zhejiang Provincial Natural Science Foundation
- OSTI Identifier:
- 1767507
- Alternate Identifier(s):
- OSTI ID: 1577908; OSTI ID: 1810024
- Grant/Contract Number:
- AC05-00OR22725; 21436007; 21706228; LR17B060002; AC05‐00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 50; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; catalysis (heterogeneous); solar (fuels); energy storage (including batteries and capacitors); hydrogen and fuel cells; solar electrodes; mechanical behavior; charge transport; materials and chemistry by design; synthesis (novel materials); boron nitride; heterostructures; mesoporous carbon; supercapacitors
Citation Formats
Chen, Hao, Yang, Zhenzhen, Guo, Wei, Dunlap, John R., Liang, Jiyuan, Sun, Yifan, Jie, Kecheng, Wang, Song, Fu, Jie, and Dai, Sheng. From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy. United States: N. p., 2019.
Web. doi:10.1002/adfm.201906284.
Chen, Hao, Yang, Zhenzhen, Guo, Wei, Dunlap, John R., Liang, Jiyuan, Sun, Yifan, Jie, Kecheng, Wang, Song, Fu, Jie, & Dai, Sheng. From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy. United States. https://doi.org/10.1002/adfm.201906284
Chen, Hao, Yang, Zhenzhen, Guo, Wei, Dunlap, John R., Liang, Jiyuan, Sun, Yifan, Jie, Kecheng, Wang, Song, Fu, Jie, and Dai, Sheng. Fri .
"From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy". United States. https://doi.org/10.1002/adfm.201906284. https://www.osti.gov/servlets/purl/1767507.
@article{osti_1767507,
title = {From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy},
author = {Chen, Hao and Yang, Zhenzhen and Guo, Wei and Dunlap, John R. and Liang, Jiyuan and Sun, Yifan and Jie, Kecheng and Wang, Song and Fu, Jie and Dai, Sheng},
abstractNote = {The current approaches used to fabricate hexagonal boron nitrides (h-BN) from boron trioxide and urea always results in contamination of the h-BN product with carbon/oxygen. Thus, discovering a facile way of mass producing high-purity h-BN remains a challenge. A simple yet highly efficient thermal treatment approach to large-scale fabrication of nanoporous h-BN with high yield, high purity, and high crystallinity is described using NaNH2 and NaBH4 as the oxygen- and carbon-free precursors. The unique properties of inorganic metal salts, i.e., high melting point and strong electrostatic interaction with carbon substrates, render this strategy suitable for the production of homogeneous h-BN/mesoporous carbon and h-BN/carbon nanotube heterostructures of high crystallinity, high h-BN dispersity, and with a strong interfacial effect. These unique features make them promising candidates for supercapacitor applications, resulting a significantly enhanced specific capacitance. This study provides new insight into the fabrication of high-purity h-BN and h-BN-based heterostructures thus expanding their application in the field of energy storage and transformation.},
doi = {10.1002/adfm.201906284},
journal = {Advanced Functional Materials},
number = 50,
volume = 29,
place = {United States},
year = {Fri Sep 27 00:00:00 EDT 2019},
month = {Fri Sep 27 00:00:00 EDT 2019}
}
Web of Science
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