Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film
Abstract
Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.
- Authors:
-
[1];
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
- Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1603948
- Alternate Identifier(s):
- OSTI ID: 1577878
- Grant/Contract Number:
- AC02-06CH11357; AC02‐ 06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 32; Journal Issue: 4; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; complex oxide; domain walls; ferroelectric; freestanding; single crystal
Citation Formats
Bakaul, Saidur R., Kim, Jaegyu, Hong, Seungbum, Cherukara, Mathew J., Zhou, Tao, Stan, Liliana, Serrao, Claudy R., Salahuddin, Sayeef, Petford‐Long, Amanda K., Fong, Dillon D., and Holt, Martin V. Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film. United States: N. p., 2019.
Web. doi:10.1002/adma.201907036.
Bakaul, Saidur R., Kim, Jaegyu, Hong, Seungbum, Cherukara, Mathew J., Zhou, Tao, Stan, Liliana, Serrao, Claudy R., Salahuddin, Sayeef, Petford‐Long, Amanda K., Fong, Dillon D., & Holt, Martin V. Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film. United States. https://doi.org/10.1002/adma.201907036
Bakaul, Saidur R., Kim, Jaegyu, Hong, Seungbum, Cherukara, Mathew J., Zhou, Tao, Stan, Liliana, Serrao, Claudy R., Salahuddin, Sayeef, Petford‐Long, Amanda K., Fong, Dillon D., and Holt, Martin V. Mon .
"Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film". United States. https://doi.org/10.1002/adma.201907036. https://www.osti.gov/servlets/purl/1603948.
@article{osti_1603948,
title = {Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film},
author = {Bakaul, Saidur R. and Kim, Jaegyu and Hong, Seungbum and Cherukara, Mathew J. and Zhou, Tao and Stan, Liliana and Serrao, Claudy R. and Salahuddin, Sayeef and Petford‐Long, Amanda K. and Fong, Dillon D. and Holt, Martin V.},
abstractNote = {Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.},
doi = {10.1002/adma.201907036},
journal = {Advanced Materials},
number = 4,
volume = 32,
place = {United States},
year = {Mon Dec 09 00:00:00 EST 2019},
month = {Mon Dec 09 00:00:00 EST 2019}
}
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