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Title: Tuning of the intrinsic magnetic damping parameter in epitaxial CoNi(001) films : Role of the band-filling effect

Journal Article · · Physical Review B
 [1];  [2];  [3];  [2];  [2];  [3];  [1];  [1];  [1]
  1. Tongji Univ., Shanghai (China)
  2. Fudan Univ., Shanghai (China)
  3. Univ. of California, Irvine, CA (United States)

The band-filling effect, which is due to tuning the electron occupation number near the Fermi level, on the intrinsic magnetic damping parameter is demonstrated by employing high-quality epitaxial Co1–xNix alloy films, in which the Fermi level and the density of states can be continuously tuned by varying the Ni concentration x. The intrinsic magnetic damping parameter, measured by the time-resolved magneto-optical Kerr effect, changes weakly at small x and increases sharply for x > 0.80. The experimental results are well reproduced by the density functional theory calculation. More interestingly, the magnetic damping parameter and the density of states near the Fermi level share similar variation trends, demonstrating their correlation. In this work, the band-filling effect in 3d magnetic transition metal alloys provides a way to tune the magnetic damping parameter as a key element in the controlg of energy loss and speed of spintronic devices.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Irvine, CA (United States)
Sponsoring Organization:
National Key R & D Program of China; National Natural Science Foundation of China (NSFC); Shanghai Committee of Science and Technology; Fundamental Research Funds for the Central Universities; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
FG02-05ER46237; 2015CB921501; 2017YFA0305300; 2017YFA0303202; 51501131; 51671147; 11874283; 11674246; 11774259; 17ZR1443700; 17142202300
OSTI ID:
1577650
Alternate ID(s):
OSTI ID: 1530636
Journal Information:
Physical Review B, Vol. 100, Issue 2; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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