Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells
Abstract
Here, we apply first-principles calculations to study the effects of extreme quantum confinement on the electronic, excitonic, and radiative properties of atomically thin (1–4 atomic monolayers) GaN quantum wells embedded in AlN. We determine the quasiparticle bandgaps, exciton energies and wave functions, radiative lifetimes, and Mott critical densities as a function of well and barrier thickness. Our results show that quantum confinement in GaN monolayers increases the bandgap up to 5.44 eV and the exciton binding energy up to 215 meV, indicating the thermal stability of excitons at room temperature. Exciton radiative lifetimes range from 1 to 3 ns at room temperature, while the Mott critical density for exciton dissociation is approximately 1013 cm-2. The luminescence is transverse-electric polarized, which facilitates light extraction from c-plane heterostructures. We also introduce a simple approximate model for calculating the exciton radiative lifetime based on the free-carrier bimolecular radiative recombination coefficient and the exciton radius, which agrees well with our results obtained with the Bethe–Salpeter equation predictions. In conclusion, our results demonstrate that atomically thin GaN quantum wells exhibit stable excitons at room temperature for potential applications in efficient light emitters in the deep ultraviolet as well as room-temperature excitonic devices.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1577609
- Alternate Identifier(s):
- OSTI ID: 1566172
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 13; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE
Citation Formats
Bayerl, Dylan, and Kioupakis, Emmanouil. Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells. United States: N. p., 2019.
Web. doi:10.1063/1.5111546.
Bayerl, Dylan, & Kioupakis, Emmanouil. Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells. United States. https://doi.org/10.1063/1.5111546
Bayerl, Dylan, and Kioupakis, Emmanouil. Tue .
"Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells". United States. https://doi.org/10.1063/1.5111546. https://www.osti.gov/servlets/purl/1577609.
@article{osti_1577609,
title = {Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells},
author = {Bayerl, Dylan and Kioupakis, Emmanouil},
abstractNote = {Here, we apply first-principles calculations to study the effects of extreme quantum confinement on the electronic, excitonic, and radiative properties of atomically thin (1–4 atomic monolayers) GaN quantum wells embedded in AlN. We determine the quasiparticle bandgaps, exciton energies and wave functions, radiative lifetimes, and Mott critical densities as a function of well and barrier thickness. Our results show that quantum confinement in GaN monolayers increases the bandgap up to 5.44 eV and the exciton binding energy up to 215 meV, indicating the thermal stability of excitons at room temperature. Exciton radiative lifetimes range from 1 to 3 ns at room temperature, while the Mott critical density for exciton dissociation is approximately 1013 cm-2. The luminescence is transverse-electric polarized, which facilitates light extraction from c-plane heterostructures. We also introduce a simple approximate model for calculating the exciton radiative lifetime based on the free-carrier bimolecular radiative recombination coefficient and the exciton radius, which agrees well with our results obtained with the Bethe–Salpeter equation predictions. In conclusion, our results demonstrate that atomically thin GaN quantum wells exhibit stable excitons at room temperature for potential applications in efficient light emitters in the deep ultraviolet as well as room-temperature excitonic devices.},
doi = {10.1063/1.5111546},
journal = {Applied Physics Letters},
number = 13,
volume = 115,
place = {United States},
year = {Tue Sep 24 00:00:00 EDT 2019},
month = {Tue Sep 24 00:00:00 EDT 2019}
}
Web of Science
Works referenced in this record:
Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
journal, August 2017
- Islam, S. M.; Protasenko, Vladimir; Lee, Kevin
- Applied Physics Letters, Vol. 111, Issue 9
Tunable electronic properties of two-dimensional nitrides for light harvesting heterostructures
journal, January 2017
- Prete, Maria Stella; Mosca Conte, Adriano; Gori, Paola
- Applied Physics Letters, Vol. 110, Issue 1
High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure
journal, July 2016
- Rong, Xin; Wang, Xinqiang; Ivanov, Sergey V.
- Advanced Materials, Vol. 28, Issue 36
Exciton Radiative Lifetimes in Two-Dimensional Transition Metal Dichalcogenides
journal, March 2015
- Palummo, Maurizia; Bernardi, Marco; Grossman, Jeffrey C.
- Nano Letters, Vol. 15, Issue 5
Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes
journal, February 2017
- Liu, Cheng; Ooi, Yu Kee; Islam, S. M.
- Applied Physics Letters, Vol. 110, Issue 7
Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
journal, December 2011
- Taniyasu, Yoshitaka; Kasu, Makoto
- Applied Physics Letters, Vol. 99, Issue 25
Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency
journal, October 2011
- Kamiya, Katsumasa; Ebihara, Yasuhiro; Shiraishi, Kenji
- Applied Physics Letters, Vol. 99, Issue 15
Predicting and Designing Optical Properties of Inorganic Materials
journal, July 2015
- Rondinelli, James M.; Kioupakis, Emmanouil
- Annual Review of Materials Research, Vol. 45, Issue 1
BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures
journal, June 2012
- Deslippe, Jack; Samsonidze, Georgy; Strubbe, David A.
- Computer Physics Communications, Vol. 183, Issue 6
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009
- Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
- Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
wannier90: A tool for obtaining maximally-localised Wannier functions
journal, May 2008
- Mostofi, Arash A.; Yates, Jonathan R.; Lee, Young-Su
- Computer Physics Communications, Vol. 178, Issue 9
Self‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters
journal, August 2019
- Kobayashi, Hirotsugu; Ichikawa, Shuhei; Funato, Mitsuru
- Advanced Optical Materials, Vol. 7, Issue 21
Tin dioxide from first principles: Quasiparticle electronic states and optical properties
journal, January 2011
- Schleife, A.; Varley, J. B.; Fuchs, F.
- Physical Review B, Vol. 83, Issue 3
Manifestation of unconventional biexciton states in quantum dots
journal, December 2014
- Hönig, Gerald; Callsen, Gordon; Schliwa, Andrei
- Nature Communications, Vol. 5, Issue 1
Room-Temperature Bound Exciton with Long Lifetime in Monolayer GaN
journal, September 2018
- Peng, Bo; Zhang, Hao; Shao, Hezhu
- ACS Photonics, Vol. 5, Issue 10
234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes
journal, January 2018
- Liu, Cheng; Ooi, Yu Kee; Islam, S. M.
- Applied Physics Letters, Vol. 112, Issue 1
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
journal, December 2013
- Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel
- New Journal of Physics, Vol. 15, Issue 12
Electronic and Optical Properties of Two-Dimensional GaN from First-Principles
journal, November 2017
- Sanders, Nocona; Bayerl, Dylan; Shi, Guangsha
- Nano Letters, Vol. 17, Issue 12
Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
journal, January 2014
- Verma, Jai; Islam, S. M.; Protasenko, Vladimir
- Applied Physics Letters, Vol. 104, Issue 2
Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence
journal, January 2016
- Sarwar, A. T. M. Golam; May, Brelon J.; Chisholm, Matthew F.
- Nanoscale, Vol. 8, Issue 15
Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures
journal, December 2016
- Bayerl, Dylan; Islam, Sm; Jones, Christina M.
- Applied Physics Letters, Vol. 109, Issue 24
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
journal, November 1997
- Muth, J. F.; Lee, J. H.; Shmagin, I. K.
- Applied Physics Letters, Vol. 71, Issue 18
Analytic solution of a two-dimensional hydrogen atom. I. Nonrelativistic theory
journal, February 1991
- Yang, X. L.; Guo, S. H.; Chan, F. T.
- Physical Review A, Vol. 43, Issue 3
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
journal, January 2017
- Islam, S. M.; Lee, Kevin; Verma, Jai
- Applied Physics Letters, Vol. 110, Issue 4
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
journal, May 2019
- Pandey, A.; Liu, X.; Deng, Z.
- Physical Review Materials, Vol. 3, Issue 5
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
journal, January 2013
- Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir
- Applied Physics Letters, Vol. 102, Issue 4
Highly radiative nature of ultra-thin c-plane Al-rich AlGaN/AlN quantum wells for deep ultraviolet emitters
journal, March 2019
- Haughn, C. R.; Rupper, G.; Wunderer, T.
- Applied Physics Letters, Vol. 114, Issue 10
Exciton binding energy in quantum wells
journal, August 1982
- Bastard, G.; Mendez, E. E.; Chang, L. L.
- Physical Review B, Vol. 26, Issue 4
First-principles calculations of indirect Auger recombination in nitride semiconductors
journal, July 2015
- Kioupakis, Emmanouil; Steiauf, Daniel; Rinke, Patrick
- Physical Review B, Vol. 92, Issue 3
Recombination of correlated electron-hole pairs in two-dimensional semiconductors
journal, September 1993
- Hangleiter, Andreas
- Physical Review B, Vol. 48, Issue 12
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
journal, November 1998
- Davydov, V. Yu.; Kitaev, Yu. E.; Goncharuk, I. N.
- Physical Review B, Vol. 58, Issue 19
First-principles calculations of the near-edge optical properties of β-Ga2O3
journal, November 2016
- Mengle, Kelsey A.; Shi, Guangsha; Bayerl, Dylan
- Applied Physics Letters, Vol. 109, Issue 21
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
journal, April 2011
- Zhang, Jing; Zhao, Hongping; Tansu, Nelson
- Applied Physics Letters, Vol. 98, Issue 17
Deep-UV nitride-on-silicon microdisk lasers
journal, February 2016
- Sellés, J.; Brimont, C.; Cassabois, G.
- Scientific Reports, Vol. 6, Issue 1
Room temperature excitonic recombination in GaInN/GaN quantum wells
journal, November 2013
- Langer, Torsten; Chernikov, Alexey; Kalincev, Dimitri
- Applied Physics Letters, Vol. 103, Issue 20
MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures
text, January 2016
- Islam, Sm; Lee, Kevin; Verma, Jai
- arXiv
Works referencing / citing this record:
Monolayer GaN excitonic deep ultraviolet light emitting diodes
journal, January 2020
- Wu, Y.; Liu, X.; Wang, P.
- Applied Physics Letters, Vol. 116, Issue 1