Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys
Abstract
InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading dislocations. Here, we apply hybrid density functional theory calculations to investigate the thermodynamic stability, lattice parameters, and bandgaps of wurtzite and zincblende quaternary BInGaN alloys. We discover that the wurtzite phase is more stable and can be lattice matched to GaN for BInGaN compositions containing up to ~30% boron. The lattice match with GaN decreases strain and enables thicker active layers that mitigate Auger recombination and increase the efficiency of the LEDs. The bandgap of the alloy remains tunable throughout the visible spectrum. Our results indicate that BInGaN alloys are promising alternatives to InGaN for high-efficiency, high-power LEDs.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- OSTI Identifier:
- 1577601
- Alternate Identifier(s):
- OSTI ID: 1545963
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 126; Journal Issue: 5; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Greenman, Kevin, Williams, Logan, and Kioupakis, Emmanouil. Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys. United States: N. p., 2019.
Web. doi:10.1063/1.5108731.
Greenman, Kevin, Williams, Logan, & Kioupakis, Emmanouil. Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys. United States. https://doi.org/10.1063/1.5108731
Greenman, Kevin, Williams, Logan, and Kioupakis, Emmanouil. Thu .
"Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys". United States. https://doi.org/10.1063/1.5108731. https://www.osti.gov/servlets/purl/1577601.
@article{osti_1577601,
title = {Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys},
author = {Greenman, Kevin and Williams, Logan and Kioupakis, Emmanouil},
abstractNote = {InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading dislocations. Here, we apply hybrid density functional theory calculations to investigate the thermodynamic stability, lattice parameters, and bandgaps of wurtzite and zincblende quaternary BInGaN alloys. We discover that the wurtzite phase is more stable and can be lattice matched to GaN for BInGaN compositions containing up to ~30% boron. The lattice match with GaN decreases strain and enables thicker active layers that mitigate Auger recombination and increase the efficiency of the LEDs. The bandgap of the alloy remains tunable throughout the visible spectrum. Our results indicate that BInGaN alloys are promising alternatives to InGaN for high-efficiency, high-power LEDs.},
doi = {10.1063/1.5108731},
journal = {Journal of Applied Physics},
number = 5,
volume = 126,
place = {United States},
year = {2019},
month = {8}
}
Web of Science
Figures / Tables:

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