Composition-induced type I and direct bandgap transition metal dichalcogenides alloy vertical heterojunctions
Abstract
Using alloying and/or twisting between layers to achieve the type I direct bandgaps vertical heterojunction in transition metal dichalcogenide family of MX 2 (M = {Mo, W}, X = {S, Se}).
- Authors:
-
[3]
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, USA
- Department of Physics and Engineering Physics, Tulane University, New Orleans, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, USA, Department of Mechanical Engineering and Applied Mechanics
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1577385
- Grant/Contract Number:
- SC0012575
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Nanoscale
- Additional Journal Information:
- Journal Name: Nanoscale Journal Volume: 12 Journal Issue: 1; Journal ID: ISSN 2040-3364
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Zhou, Songsong, Ning, Jinliang, Sun, Jianwei, and Srolovitz, David J. Composition-induced type I and direct bandgap transition metal dichalcogenides alloy vertical heterojunctions. United Kingdom: N. p., 2020.
Web. doi:10.1039/C9NR08345F.
Zhou, Songsong, Ning, Jinliang, Sun, Jianwei, & Srolovitz, David J. Composition-induced type I and direct bandgap transition metal dichalcogenides alloy vertical heterojunctions. United Kingdom. doi:10.1039/C9NR08345F.
Zhou, Songsong, Ning, Jinliang, Sun, Jianwei, and Srolovitz, David J. Wed .
"Composition-induced type I and direct bandgap transition metal dichalcogenides alloy vertical heterojunctions". United Kingdom. doi:10.1039/C9NR08345F.
@article{osti_1577385,
title = {Composition-induced type I and direct bandgap transition metal dichalcogenides alloy vertical heterojunctions},
author = {Zhou, Songsong and Ning, Jinliang and Sun, Jianwei and Srolovitz, David J.},
abstractNote = {Using alloying and/or twisting between layers to achieve the type I direct bandgaps vertical heterojunction in transition metal dichalcogenide family of MX 2 (M = {Mo, W}, X = {S, Se}).},
doi = {10.1039/C9NR08345F},
journal = {Nanoscale},
number = 1,
volume = 12,
place = {United Kingdom},
year = {2020},
month = {1}
}
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DOI: 10.1039/C9NR08345F
DOI: 10.1039/C9NR08345F
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