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Title: Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi

Abstract

Magnetic topological semimetals, the latest member of topological quantum materials are attracting extensive attention as they may lead to topologically-driven spintronics. Currently, magnetotransport investigations on these materials are focused on the anomalous Hall effect. Here,we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arising from localized Ce 4 f electronsandexhibits both negative and positive magnetoresistances, depending on the temperature. We found that the angle dependence of the negative magnetoresistance, regardless of its large variation with the magnitude of the magnetic field and with temperature, is solely dictated by the field-induced magnetization that is orientated along a primary crystalline axis and flops under the influence of a rotating magnetic field.The results reveal the strong interaction between conduction electronsand magnetization in CeBi. They also indicate that magnetoresistance anisotropy can be used to uncover the magnetic behavior and the correlation between transport phenomena and magnetism in magnetic topological semimetals.

Authors:
 [1];  [2]; ORCiD logo [3];  [4]; ORCiD logo [5];  [5]; ORCiD logo [4]; ORCiD logo [4]; ORCiD logo [2];  [4];  [4];  [6];  [4]
  1. Argonne National Lab. (ANL), Argonne, IL (United States); Nanjing Univ., Nanjing (China)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States); Northern Illinois Univ., DeKalb, IL (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
  5. Najing Univ., Nanjing (China)
  6. Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1577112
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 100; Journal Issue: 18; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Topological semimetal; anisotropy; magnetic phase diagram; magnetoresistance

Citation Formats

Lyu, Yang -Yang, Han, Fei, Xiao, Zhi -Li, Xu, Jing, Wang, Yong -Lei, Wang, Hua -Bing, Bao, Jin -Ke, Chung, Duck Young, Li, Mingda, Martin, Ivar, Welp, Ulrich, Kanatzidis, Mercouri G., and Kwok, Wai -Kwong. Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.100.180407.
Lyu, Yang -Yang, Han, Fei, Xiao, Zhi -Li, Xu, Jing, Wang, Yong -Lei, Wang, Hua -Bing, Bao, Jin -Ke, Chung, Duck Young, Li, Mingda, Martin, Ivar, Welp, Ulrich, Kanatzidis, Mercouri G., & Kwok, Wai -Kwong. Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi. United States. doi:10.1103/PhysRevB.100.180407.
Lyu, Yang -Yang, Han, Fei, Xiao, Zhi -Li, Xu, Jing, Wang, Yong -Lei, Wang, Hua -Bing, Bao, Jin -Ke, Chung, Duck Young, Li, Mingda, Martin, Ivar, Welp, Ulrich, Kanatzidis, Mercouri G., and Kwok, Wai -Kwong. Thu . "Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi". United States. doi:10.1103/PhysRevB.100.180407.
@article{osti_1577112,
title = {Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi},
author = {Lyu, Yang -Yang and Han, Fei and Xiao, Zhi -Li and Xu, Jing and Wang, Yong -Lei and Wang, Hua -Bing and Bao, Jin -Ke and Chung, Duck Young and Li, Mingda and Martin, Ivar and Welp, Ulrich and Kanatzidis, Mercouri G. and Kwok, Wai -Kwong},
abstractNote = {Magnetic topological semimetals, the latest member of topological quantum materials are attracting extensive attention as they may lead to topologically-driven spintronics. Currently, magnetotransport investigations on these materials are focused on the anomalous Hall effect. Here,we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arising from localized Ce 4f electronsandexhibits both negative and positive magnetoresistances, depending on the temperature. We found that the angle dependence of the negative magnetoresistance, regardless of its large variation with the magnitude of the magnetic field and with temperature, is solely dictated by the field-induced magnetization that is orientated along a primary crystalline axis and flops under the influence of a rotating magnetic field.The results reveal the strong interaction between conduction electronsand magnetization in CeBi. They also indicate that magnetoresistance anisotropy can be used to uncover the magnetic behavior and the correlation between transport phenomena and magnetism in magnetic topological semimetals.},
doi = {10.1103/PhysRevB.100.180407},
journal = {Physical Review B},
number = 18,
volume = 100,
place = {United States},
year = {2019},
month = {11}
}

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