BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs

Williams, Logan; Kioupakis, Emmanouil

doi:10.1063/1.5129387

Title: BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs

Authors:

^[1];

^[1]

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

Publication Date:: 2019-12-02

Sponsoring Org.:: USDOE

OSTI Identifier:: 1577008

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Williams, Logan, and Kioupakis, Emmanouil. BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs.  United States: N. p., 2019. 
        Web.  doi:10.1063/1.5129387.

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                    Williams, Logan, & Kioupakis, Emmanouil. BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs.  United States.  doi:https://doi.org/10.1063/1.5129387

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                    Williams, Logan, and Kioupakis, Emmanouil. Mon .  
        "BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs".  United States.  doi:https://doi.org/10.1063/1.5129387.

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@article{osti_1577008,

  title        = {BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs},

  author       = {Williams, Logan and Kioupakis, Emmanouil},

  abstractNote = {},

  doi          = {10.1063/1.5129387},

  journal      = {Applied Physics Letters},

  number       = 23,

  volume       = 115,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

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DOI: https://doi.org/10.1063/1.5129387

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Works referenced in this record:

Theoretical study of optical properties of non-polar BAlGaN/AlN quantum wells lattice-matched to AlN
journal, March 2019

Park, Seoung-Hwan; Ahn, Doyeol
Solid State Communications, Vol. 290
DOI: 10.1016/j.ssc.2019.01.006

Anisotropic optical matrix elements in strained GaN-quantum wells with various substrate orientations
journal, May 2008

Yamaguchi, A. Atsushi
physica status solidi (c), Vol. 5, Issue 6
DOI: 10.1002/pssc.200778420

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs
journal, November 2017

Williams, Logan; Kioupakis, Emmanouil
Applied Physics Letters, Vol. 111, Issue 21
DOI: 10.1063/1.4997601

Optical and structural properties of BGaN layers grown on different substrates
journal, October 2015

Kadys, A.; Mickevičius, J.; Malinauskas, T.
Journal of Physics D: Applied Physics, Vol. 48, Issue 46
DOI: 10.1088/0022-3727/48/46/465307

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
journal, September 2010

Zhang, Jing; Zhao, Hongping; Tansu, Nelson
Applied Physics Letters, Vol. 97, Issue 11
DOI: 10.1063/1.3488825

GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs
journal, September 2014

Forghani, Kamran; Guan, Yingxin; Losurdo, Maria
Applied Physics Letters, Vol. 105, Issue 11
DOI: 10.1063/1.4895116

Projector augmented-wave method
journal, December 1994

Blöchl, P. E.
Physical Review B, Vol. 50, Issue 24, p. 17953-17979
DOI: 10.1103/PhysRevB.50.17953

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
The Journal of Chemical Physics, Vol. 118, Issue 18
DOI: 10.1063/1.1564060

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
journal, July 2008

Schubert, Martin F.; Xu, Jiuru; Kim, Jong Kyu
Applied Physics Letters, Vol. 93, Issue 4
DOI: 10.1063/1.2963029

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
journal, July 2018

Nagasawa, Yosuke; Hirano, Akira
Applied Sciences, Vol. 8, Issue 8
DOI: 10.3390/app8081264

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Kresse, G.; Furthmüller, J.
Computational Materials Science, Vol. 6, Issue 1, p. 15-50
DOI: 10.1016/0927-0256(96)00008-0

Van der Waals density functionals applied to solids
journal, May 2011

Klimeš, Jiří; Bowler, David R.; Michaelides, Angelos
Physical Review B, Vol. 83, Issue 19
DOI: 10.1103/PhysRevB.83.195131

Optical anisotropy in [0001]-oriented ${Al}_{x} {Ga}_{1 - x} N / AlN$ quantum wells $(x > 0.69)$
journal, March 2009

Banal, R. G.; Funato, M.; Kawakami, Y.
Physical Review B, Vol. 79, Issue 12
DOI: 10.1103/PhysRevB.79.121308

First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory
journal, July 2001

Zoroddu, Agostino; Bernardini, Fabio; Ruggerone, Paolo
Physical Review B, Vol. 64, Issue 4
DOI: 10.1103/PhysRevB.64.045208

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
journal, September 2014

Hirayama, Hideki; Maeda, Noritoshi; Fujikawa, Sachie
Japanese Journal of Applied Physics, Vol. 53, Issue 10
DOI: 10.7567/JJAP.53.100209

Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission
journal, April 2002

Takano, Takayoshi; Kurimoto, Makoto; Yamamoto, Jun
Journal of Crystal Growth, Vol. 237-239
DOI: 10.1016/S0022-0248(01)02026-7

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Kresse, G.; Furthmüller, J.
Physical Review B, Vol. 54, Issue 16, p. 11169-11186
DOI: 10.1103/PhysRevB.54.11169

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Kresse, G.; Joubert, D.
Physical Review B, Vol. 59, Issue 3, p. 1758-1775
DOI: 10.1103/PhysRevB.59.1758

Band alignments and polarization properties of BN polymorphs
journal, February 2014

Dreyer, Cyrus E.; Lyons, John L.; Janotti, Anderson
Applied Physics Express, Vol. 7, Issue 3
DOI: 10.7567/APEX.7.031001

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes
journal, January 2018

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.
Applied Physics Letters, Vol. 112, Issue 1
DOI: 10.1063/1.5007835

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells
journal, June 2018

Park, Seoung-Hwan; Ahn, Doyeol
Optics Communications, Vol. 417
DOI: 10.1016/j.optcom.2018.02.050

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994

Kresse, G.; Hafner, J.
Physical Review B, Vol. 49, Issue 20, p. 14251-14269
DOI: 10.1103/PhysRevB.49.14251

BAlN thin layers for deep UV applications: BAlN thin layers for deep UV applications
journal, March 2015

Li, Xin; Sundaram, Suresh; Gmili, Youssef El
physica status solidi (a), Vol. 212, Issue 4
DOI: 10.1002/pssa.201400199

Efficient generation of generalized Monkhorst-Pack grids through the use of informatics
journal, April 2016

Wisesa, Pandu; McGill, Kyle A.; Mueller, Tim
Physical Review B, Vol. 93, Issue 15
DOI: 10.1103/PhysRevB.93.155109

Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures
journal, January 2016

Park, Seoung-Hwan; Ahn, Doyeol
Applied Physics Express, Vol. 9, Issue 2
DOI: 10.7567/APEX.9.021001

Band bowing and the direct-to-indirect crossover in random BAlN alloys
journal, November 2017

Shen, Jimmy-Xuan; Wickramaratne, Darshana; Van de Walle, Chris G.
Physical Review Materials, Vol. 1, Issue 6
DOI: 10.1103/PhysRevMaterials.1.065001

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
journal, June 2006

Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
The Journal of Chemical Physics, Vol. 124, Issue 21
DOI: 10.1063/1.2204597

Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides
journal, June 2016

Dreyer, Cyrus E.; Janotti, Anderson; Van de Walle, Chris G.
Physical Review X, Vol. 6, Issue 2
DOI: 10.1103/PhysRevX.6.021038

Growth of coherent BGaN films using BBr ₃ gas as a boron source in plasma assisted molecular beam epitaxy
journal, July 2017

Cramer, Richard C.; Bonef, Bastien; English, John
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 4
DOI: 10.1116/1.4986185

Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures
journal, October 2016

Said, A.; Debbichi, M.; Said, M.
Optik, Vol. 127, Issue 20
DOI: 10.1016/j.ijleo.2016.06.103

Band gap bowing and crossing of B _x Ga _{1− x} N alloy investigated by hybrid functional method
journal, February 2016

Jiang, Jiaping; Gai, Yanqin; Tang, Gang
Journal of Semiconductors, Vol. 37, Issue 2
DOI: 10.1088/1674-4926/37/2/023004

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
journal, February 2002

Janotti, A.; Wei, Su-Huai; Zhang, S. B.
Physical Review B, Vol. 65, Issue 11
DOI: 10.1103/PhysRevB.65.115203

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Kresse, G.; Hafner, J.
Physical Review B, Vol. 47, Issue 1, p. 558-561
DOI: 10.1103/PhysRevB.47.558

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%: 100-nm thick single-phase wurtzite BAlN films
journal, January 2017

Li, Xiaohang; Wang, Shuo; Liu, Hanxiao
physica status solidi (b), Vol. 254, Issue 8
DOI: 10.1002/pssb.201600699

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
journal, February 2018

Bryan, Isaac; Bryan, Zachary; Washiyama, Shun
Applied Physics Letters, Vol. 112, Issue 6
DOI: 10.1063/1.5011984

High-efficiency BAlGaN/AlN quantum well structures for optoelectronic applications in ultraviolet spectral region
journal, January 2015

Park, Seoung-Hwan
Optics Express, Vol. 23, Issue 3
DOI: 10.1364/OE.23.003623

Improved Optical Quality of BAlGaN/AlN MQW Structure Grown on 6H-SiC Substrate by Controlling Residual Strain Using Multi-Buffer Layer
journal, January 2000

Takano, Takayoshi; Kawanishi, Hideo; Kurimoto, Makoto
MRS Proceedings, Vol. 639
DOI: 10.1557/PROC-639-G12.9

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
journal, August 2008

Jain, R.; Sun, W.; Yang, J.
Applied Physics Letters, Vol. 93, Issue 5
DOI: 10.1063/1.2969402

Efficient stochastic generation of special quasirandom structures
journal, September 2013

van de Walle, A.; Tiwary, P.; de Jong, M.
Calphad, Vol. 42
DOI: 10.1016/j.calphad.2013.06.006

Room-Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser Diode
journal, July 2000

Takano, T.; Kurimoto, M.; Yamamoto, J.
physica status solidi (a), Vol. 180, Issue 1
DOI: 10.1002/1521-396X(200007)180:1<231::AID-PSSA231>3.0.CO;2-E

Unique optical properties of AlGaN alloys and related ultraviolet emitters
journal, June 2004

Nam, K. B.; Li, J.; Nakarmi, M. L.
Applied Physics Letters, Vol. 84, Issue 25
DOI: 10.1063/1.1765208

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices
journal, May 2018

Park, Seoung-Hwan; Ahn, Doyeol
Superlattices and Microstructures, Vol. 117
DOI: 10.1016/j.spmi.2018.03.066

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Title: BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs

Citation Formats

Theoretical study of optical properties of non-polar BAlGaN/AlN quantum wells lattice-matched to AlN journal, March 2019

Anisotropic optical matrix elements in strained GaN-quantum wells with various substrate orientations journal, May 2008

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs journal, November 2017

Optical and structural properties of BGaN layers grown on different substrates journal, October 2015

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers journal, September 2010

GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs journal, September 2014

Projector augmented-wave method journal, December 1994

Hybrid functionals based on a screened Coulomb potential journal, May 2003

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop journal, July 2008

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire journal, July 2018

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal, July 1996

Van der Waals density functionals applied to solids journal, May 2011

Optical anisotropy in [0001]-oriented Al x Ga 1 − x N / AlN quantum wells ( x > 0.69 ) journal, March 2009

First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory journal, July 2001

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes journal, September 2014

Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission journal, April 2002

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

From ultrasoft pseudopotentials to the projector augmented-wave method journal, January 1999

Band alignments and polarization properties of BN polymorphs journal, February 2014

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes journal, January 2018

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells journal, June 2018

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium journal, May 1994

BAlN thin layers for deep UV applications: BAlN thin layers for deep UV applications journal, March 2015

Efficient generation of generalized Monkhorst-Pack grids through the use of informatics journal, April 2016

Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures journal, January 2016

Band bowing and the direct-to-indirect crossover in random BAlN alloys journal, November 2017

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal, June 2006

Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides journal, June 2016

Growth of coherent BGaN films using BBr 3 gas as a boron source in plasma assisted molecular beam epitaxy journal, July 2017

Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures journal, October 2016

Band gap bowing and crossing of B x Ga 1− x N alloy investigated by hybrid functional method journal, February 2016

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs journal, February 2002

Ab initiomolecular dynamics for liquid metals journal, January 1993

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%: 100-nm thick single-phase wurtzite BAlN films journal, January 2017

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD journal, February 2018

High-efficiency BAlGaN/AlN quantum well structures for optoelectronic applications in ultraviolet spectral region journal, January 2015

Improved Optical Quality of BAlGaN/AlN MQW Structure Grown on 6H-SiC Substrate by Controlling Residual Strain Using Multi-Buffer Layer journal, January 2000

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes journal, August 2008

Efficient stochastic generation of special quasirandom structures journal, September 2013

Room-Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser Diode journal, July 2000

Unique optical properties of AlGaN alloys and related ultraviolet emitters journal, June 2004

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices journal, May 2018

Theoretical study of optical properties of non-polar BAlGaN/AlN quantum wells lattice-matched to AlN
journal, March 2019

Anisotropic optical matrix elements in strained GaN-quantum wells with various substrate orientations
journal, May 2008

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs
journal, November 2017

Optical and structural properties of BGaN layers grown on different substrates
journal, October 2015

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
journal, September 2010

GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs
journal, September 2014

Projector augmented-wave method
journal, December 1994

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
journal, July 2008

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
journal, July 2018

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Van der Waals density functionals applied to solids
journal, May 2011

Optical anisotropy in [0001]-oriented ${Al}_{x} {Ga}_{1 - x} N / AlN$ quantum wells $(x > 0.69)$
journal, March 2009

First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory
journal, July 2001

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
journal, September 2014

Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission
journal, April 2002

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Band alignments and polarization properties of BN polymorphs
journal, February 2014

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes
journal, January 2018

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells
journal, June 2018

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994

BAlN thin layers for deep UV applications: BAlN thin layers for deep UV applications
journal, March 2015

Efficient generation of generalized Monkhorst-Pack grids through the use of informatics
journal, April 2016

Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures
journal, January 2016

Band bowing and the direct-to-indirect crossover in random BAlN alloys
journal, November 2017

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
journal, June 2006

Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides
journal, June 2016

Growth of coherent BGaN films using BBr ₃ gas as a boron source in plasma assisted molecular beam epitaxy
journal, July 2017

Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures
journal, October 2016

Band gap bowing and crossing of B _x Ga _{1− x} N alloy investigated by hybrid functional method
journal, February 2016

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
journal, February 2002

Ab initiomolecular dynamics for liquid metals
journal, January 1993

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%: 100-nm thick single-phase wurtzite BAlN films
journal, January 2017

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
journal, February 2018

High-efficiency BAlGaN/AlN quantum well structures for optoelectronic applications in ultraviolet spectral region
journal, January 2015

Improved Optical Quality of BAlGaN/AlN MQW Structure Grown on 6H-SiC Substrate by Controlling Residual Strain Using Multi-Buffer Layer
journal, January 2000

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
journal, August 2008

Efficient stochastic generation of special quasirandom structures
journal, September 2013

Room-Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser Diode
journal, July 2000

Unique optical properties of AlGaN alloys and related ultraviolet emitters
journal, June 2004

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices
journal, May 2018