BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs

Williams, Logan; Kioupakis, Emmanouil

doi:10.1063/1.5129387

Title: BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs

Journal Article · 03 December 2019 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5129387 · OSTI ID:1577008

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The lattice mismatch between AlGaN and AlN substrates limits the design and efficiency of UV light-emitting diodes, but it can be mitigated by the coincorporation of boron. We employ hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BAlGaN alloys. We show that BAlGaN can lattice match AlN with bandgaps that match AlGaN of the same gallium content. We predict that BAlGaN emits transverse-electric polarization for a gallium content of ∼45% or more. Our results indicate that BAlGaN alloys are promising materials for higher efficiency UV optoelectronic devices on bulk AlN substrates.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1577008

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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