High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics

Jeon, Nari; Mandia, David J.; Gray, Stephen K.; Foley, IV, Jonathan J.; Martinson, Alex B. F.

doi:10.1021/acsami.9b13944

Title: High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics

Abstract

The efficiency of a thermophotovoltaic (TPV) system depends critically upon the spectral selectivity and stability of an emitter, which may operate most effectively at temperatures in excess of 1000 °C. Here, we computationally design and experimentally demonstrate a novel selective emitter design based on multilayer nanostructures, robust to off-normal emission angles. A computational search of the material and temperature compatibility space of simple emitter designs motivates new material classes and identifies several promising multilayer nanostructure designs for both TPV absorber and emitter applications. One such structure, comprising a thin (<100 nm) tunable Ti_xAl_1-xN (TiAlN) absorber and refractory oxide Bragg reflector is grown on W metal foil. In agreement with simulations, the emitter achieves record spectral efficiency (43.4%) and power density (3.6 W/cm²) for an emitter with at least 1 h of high temperature (>800 °C) operation.

Authors:

^[1];

^[1]; Gray, Stephen K. ^[1];

^[2];

^[1]

Argonne National Lab. (ANL), Lemont, IL (United States)
William Paterson Univ., Wayne, NJ (United States)

Publication Date:: 2019-10-25

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

OSTI Identifier:: 1576978

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Materials and Interfaces

Additional Journal Information:: Journal Volume: 11; Journal Issue: 44; Journal ID: ISSN 1944-8244

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; atomic layer deposition; optical coating; selective emitters; solar thermophotovoltaics

Citation Formats


                    Jeon, Nari, Mandia, David J., Gray, Stephen K., Foley, IV, Jonathan J., and Martinson, Alex B. F. High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics.  United States: N. p., 2019. 
Web.  doi:10.1021/acsami.9b13944.

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                    Jeon, Nari, Mandia, David J., Gray, Stephen K., Foley, IV, Jonathan J., & Martinson, Alex B. F. High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics.  United States.  https://doi.org/10.1021/acsami.9b13944

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                    Jeon, Nari, Mandia, David J., Gray, Stephen K., Foley, IV, Jonathan J., and Martinson, Alex B. F. Fri .  
"High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics".  United States.  https://doi.org/10.1021/acsami.9b13944.  https://www.osti.gov/servlets/purl/1576978.

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@article{osti_1576978,

  title        = {High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics},

  author       = {Jeon, Nari and Mandia, David J. and Gray, Stephen K. and Foley, IV, Jonathan J. and Martinson, Alex B. F.},

  abstractNote = {The efficiency of a thermophotovoltaic (TPV) system depends critically upon the spectral selectivity and stability of an emitter, which may operate most effectively at temperatures in excess of 1000 °C. Here, we computationally design and experimentally demonstrate a novel selective emitter design based on multilayer nanostructures, robust to off-normal emission angles. A computational search of the material and temperature compatibility space of simple emitter designs motivates new material classes and identifies several promising multilayer nanostructure designs for both TPV absorber and emitter applications. One such structure, comprising a thin (<100 nm) tunable TixAl1-xN (TiAlN) absorber and refractory oxide Bragg reflector is grown on W metal foil. In agreement with simulations, the emitter achieves record spectral efficiency (43.4%) and power density (3.6 W/cm2) for an emitter with at least 1 h of high temperature (>800 °C) operation.},

  doi          = {10.1021/acsami.9b13944},

  journal      = {ACS Applied Materials and Interfaces},

  number       = 44,

  volume       = 11,

  place        = {United States},

  year         = {2019},

  month        = {10}

}

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Cited by: 6 works

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Figure 1: (a) Comparisons of melting point (bars) and refractive index (circles) of various refractory oxides showing largest $Δn$ for lowest melting binary oxides. Reflectance spectra of (b) Al₂O₃ - HfO₂ multilayer sample and (c) TiO₂ - SiO₂ multilayer sample after annealing at various temperatures under Ar atmosphere for 1more »

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