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Title: High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics

Abstract

The efficiency of a thermophotovoltaic (TPV) system depends critically upon the spectral selectivity and stability of an emitter, which may operate most effectively at temperatures in excess of 1000 °C. Here, we computationally design and experimentally demonstrate a novel selective emitter design based on multilayer nanostructures, robust to off-normal emission angles. A computational search of the material and temperature compatibility space of simple emitter designs motivates new material classes and identifies several promising multilayer nanostructure designs for both TPV absorber and emitter applications. One such structure, comprising a thin (<100 nm) tunable TixAl1-xN (TiAlN) absorber and refractory oxide Bragg reflector is grown on W metal foil. In agreement with simulations, the emitter achieves record spectral efficiency (43.4%) and power density (3.6 W/cm2) for an emitter with at least 1 h of high temperature (>800 °C) operation.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Argonne National Lab. (ANL), Lemont, IL (United States)
  2. William Paterson Univ., Wayne, NJ (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1576978
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 11; Journal Issue: 44; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; atomic layer deposition; optical coating; selective emitters; solar thermophotovoltaics

Citation Formats

Jeon, Nari, Mandia, David J., Gray, Stephen K., Foley, IV, Jonathan J., and Martinson, Alex B. F. High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics. United States: N. p., 2019. Web. https://doi.org/10.1021/acsami.9b13944.
Jeon, Nari, Mandia, David J., Gray, Stephen K., Foley, IV, Jonathan J., & Martinson, Alex B. F. High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics. United States. https://doi.org/10.1021/acsami.9b13944
Jeon, Nari, Mandia, David J., Gray, Stephen K., Foley, IV, Jonathan J., and Martinson, Alex B. F. Fri . "High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics". United States. https://doi.org/10.1021/acsami.9b13944. https://www.osti.gov/servlets/purl/1576978.
@article{osti_1576978,
title = {High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics},
author = {Jeon, Nari and Mandia, David J. and Gray, Stephen K. and Foley, IV, Jonathan J. and Martinson, Alex B. F.},
abstractNote = {The efficiency of a thermophotovoltaic (TPV) system depends critically upon the spectral selectivity and stability of an emitter, which may operate most effectively at temperatures in excess of 1000 °C. Here, we computationally design and experimentally demonstrate a novel selective emitter design based on multilayer nanostructures, robust to off-normal emission angles. A computational search of the material and temperature compatibility space of simple emitter designs motivates new material classes and identifies several promising multilayer nanostructure designs for both TPV absorber and emitter applications. One such structure, comprising a thin (<100 nm) tunable TixAl1-xN (TiAlN) absorber and refractory oxide Bragg reflector is grown on W metal foil. In agreement with simulations, the emitter achieves record spectral efficiency (43.4%) and power density (3.6 W/cm2) for an emitter with at least 1 h of high temperature (>800 °C) operation.},
doi = {10.1021/acsami.9b13944},
journal = {ACS Applied Materials and Interfaces},
number = 44,
volume = 11,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

Figure 1 Figure 1: (a) Comparisons of melting point (bars) and refractive index (circles) of various refractory oxides showing largest $Δn$ for lowest melting binary oxides. Reflectance spectra of (b) Al2O3 - HfO2 multilayer sample and (c) TiO2 - SiO2 multilayer sample after annealing at various temperatures under Ar atmosphere for 1more » hour. (d) XRD spectra from bottom to top: as-deposited TiO2 - SiO2, TiO2 - SiO2 after heating to 1200 °C, Al2O3 - HfO2 as-deposited, and Al2O3 - HfO2 after heating to 1200 °C. The reference peaks of HfO2, AlN, rutile TiO2, and anatase TiO2 were adapted from JCPDF card # 01-075-6426, 00-025-1133, 01-075-1757, and 00-004-0477, respectively.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.