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Title: Atomic-Resolution Study of Grain Boundaries in CdTe Using Scanning Transmission Electron Microscopy

Abstract

CdTe is one of the most promising photovoltaic materials due to its near optimum band gap and a high absorption coefficient. However, the efficiencies of both champion poly-crystalline CdTe photovoltaic cells as well as production line modules are still significantly below the theoretical Shockley-Queisser limit of ~30%. Reduction of non-radiative recombination at grain boundaries is believed to be the key to improving the efficiency of polycrystalline CdTe-based solar cells. Here, atomistic-level characterization, including scanning transmission electron microscopy (STEM) and first principles density functional theory (DFT) modeling, is crucial in developing a fundamental understanding of how grain boundaries affect the solar cells’ efficiency.

Authors:
 [1];  [2];  [3];  [3];  [3];  [2]; ORCiD logo [1]
  1. Univ. of Illinois at Chicago, Chicago, IL (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Texas at Dallas, Dallas, TX (United States)
Publication Date:
Research Org.:
Univ. of Illinois, Chicago, IL (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1576760
Grant/Contract Number:  
EE0007545
Resource Type:
Accepted Manuscript
Journal Name:
Microscopy and Microanalysis
Additional Journal Information:
Journal Volume: 24; Journal Issue: S1; Conference: Microscopy and Microanalysis 2018; Journal ID: ISSN 1431-9276
Publisher:
Microscopy Society of America (MSA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CdTe; STEM

Citation Formats

Guo, Jinglong, Sen, Fatih G., Wang, Luhua, Nam, Seungjin, Kim, Moon, Chan, Maria K. Y., and Klie, Robert F. Atomic-Resolution Study of Grain Boundaries in CdTe Using Scanning Transmission Electron Microscopy. United States: N. p., 2018. Web. doi:10.1017/S1431927618001009.
Guo, Jinglong, Sen, Fatih G., Wang, Luhua, Nam, Seungjin, Kim, Moon, Chan, Maria K. Y., & Klie, Robert F. Atomic-Resolution Study of Grain Boundaries in CdTe Using Scanning Transmission Electron Microscopy. United States. doi:10.1017/S1431927618001009.
Guo, Jinglong, Sen, Fatih G., Wang, Luhua, Nam, Seungjin, Kim, Moon, Chan, Maria K. Y., and Klie, Robert F. Wed . "Atomic-Resolution Study of Grain Boundaries in CdTe Using Scanning Transmission Electron Microscopy". United States. doi:10.1017/S1431927618001009. https://www.osti.gov/servlets/purl/1576760.
@article{osti_1576760,
title = {Atomic-Resolution Study of Grain Boundaries in CdTe Using Scanning Transmission Electron Microscopy},
author = {Guo, Jinglong and Sen, Fatih G. and Wang, Luhua and Nam, Seungjin and Kim, Moon and Chan, Maria K. Y. and Klie, Robert F.},
abstractNote = {CdTe is one of the most promising photovoltaic materials due to its near optimum band gap and a high absorption coefficient. However, the efficiencies of both champion poly-crystalline CdTe photovoltaic cells as well as production line modules are still significantly below the theoretical Shockley-Queisser limit of ~30%. Reduction of non-radiative recombination at grain boundaries is believed to be the key to improving the efficiency of polycrystalline CdTe-based solar cells. Here, atomistic-level characterization, including scanning transmission electron microscopy (STEM) and first principles density functional theory (DFT) modeling, is crucial in developing a fundamental understanding of how grain boundaries affect the solar cells’ efficiency.},
doi = {10.1017/S1431927618001009},
journal = {Microscopy and Microanalysis},
number = S1,
volume = 24,
place = {United States},
year = {2018},
month = {8}
}

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Works referenced in this record:

Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe
journal, September 2014

  • Paulauskas, Tadas; Buurma, Christopher; Colegrove, Eric
  • Acta Crystallographica Section A Foundations and Advances, Vol. 70, Issue 6
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Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface
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Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

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