Improving the Electronic Transporting Property for Flexible Field-Effect Transistors with Naphthalene Diimide-Based Conjugated Polymer through Branching/Linear Side-Chain Engineering Strategy

Ma, Jing; Zhao, Zhiyuan; Guo, Yunlong; Geng, Hua; Sun, Yanan; Tian, Jianwu; He, Qiming; Cai, Zhengxu; Zhang, Xisha; Zhang, Guanxin; Liu, Zitong; Zhang, Deqing; Liu, Yunqi

doi:10.1021/acsami.9b00531

Title: Improving the Electronic Transporting Property for Flexible Field-Effect Transistors with Naphthalene Diimide-Based Conjugated Polymer through Branching/Linear Side-Chain Engineering Strategy

Journal Article · 09 April 2019 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.9b00531 · OSTI ID:1576012

Ma, Jing ^[1]; Zhao, Zhiyuan ^[2];

^[2]; Geng, Hua ^[3]; Sun, Yanan ^[3]; Tian, Jianwu ^[1];

^[4];

^[5]; Zhang, Xisha ^[6];

^[2];

^[1];

^[2]

Chinese Academy of Sciences (CAS), Beijing (China); Univ. of Chinese Academy of Sciences (CAS), Beijing (China)
Chinese Academy of Sciences (CAS), Beijing (China)
Capital Normal Univ., Beijing (China)
Univ. of Chicago, IL (United States)
Beijing Inst. of Technology (China)
Univ. of Chinese Academy of Sciences (CAS), Beijing (China)

n-Type organic/polymeric semiconductors with high electron mobilities are highly demanded for future flexible organic circuits. Except for developing a new conjugated backbone, recent studies show that side-chain engineering also plays an indispensable role in boosting the charge-transporting property. In this paper, we report a new polymer PNDI2T-DTD with a representative n-type naphthalene diimide (NDI)–bithiophene backbone for high-performance n-type flexible thin-film transistors through branching/linear side-chain engineering strategy. Serving as the flexible side chains, the linear/branching side-chain pattern is found to be effective in tuning the preaggregation behavior in solution and the packing ordering of polymeric chains, resulting in the improvement of thin-film crystallinity. We report the electron mobility of the thin film of PNDI2T-DTD on flexible substrates can reach 1.52 cm² V^–1 s^–1, which is approximately five times higher than that of PNDI2T-DT with the same conjugated backbone and only branching alkyl chains.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: Chinese Academy of Sciences (CAS); National Natural Science Foundation of China (NSFC); National Key Research and Development Program of China; National Postdoctoral Program for Innovative Talents; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1576012

Journal Information:: ACS Applied Materials and Interfaces, Vol. 11, Issue 17; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 29 works

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