skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on October 28, 2020

Title: Orbital design of topological insulators from two-dimensional semiconductors

Abstract

An orbital design approach to convert two-dimensional semiconductors to topological insulators via selective atomic adsorption or strain is proposed.

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [4];  [3]
  1. Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
  2. Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China, School of Information and Electronics
  3. Department of Materials Science and Engineering, University of Utah, Salt Lake City, USA
  4. Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China, CAS Center for Excellence in Topological Quantum Computation
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1575953
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 11 Journal Issue: 47; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Gao, Lei, Sun, Jia-Tao, Sethi, Gurjyot, Zhang, Yu-Yang, Du, Shixuan, and Liu, Feng. Orbital design of topological insulators from two-dimensional semiconductors. United Kingdom: N. p., 2019. Web. doi:10.1039/C9NR06859G.
Gao, Lei, Sun, Jia-Tao, Sethi, Gurjyot, Zhang, Yu-Yang, Du, Shixuan, & Liu, Feng. Orbital design of topological insulators from two-dimensional semiconductors. United Kingdom. doi:10.1039/C9NR06859G.
Gao, Lei, Sun, Jia-Tao, Sethi, Gurjyot, Zhang, Yu-Yang, Du, Shixuan, and Liu, Feng. Thu . "Orbital design of topological insulators from two-dimensional semiconductors". United Kingdom. doi:10.1039/C9NR06859G.
@article{osti_1575953,
title = {Orbital design of topological insulators from two-dimensional semiconductors},
author = {Gao, Lei and Sun, Jia-Tao and Sethi, Gurjyot and Zhang, Yu-Yang and Du, Shixuan and Liu, Feng},
abstractNote = {An orbital design approach to convert two-dimensional semiconductors to topological insulators via selective atomic adsorption or strain is proposed.},
doi = {10.1039/C9NR06859G},
journal = {Nanoscale},
number = 47,
volume = 11,
place = {United Kingdom},
year = {2019},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 28, 2020
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Experimental observation of the quantum Hall effect and Berry's phase in graphene
journal, November 2005

  • Zhang, Yuanbo; Tan, Yan-Wen; Stormer, Horst L.
  • Nature, Vol. 438, Issue 7065, p. 201-204
  • DOI: 10.1038/nature04235

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
journal, June 2017


Epitaxial Growth of Honeycomb Monolayer CuSe with Dirac Nodal Line Fermions
journal, March 2018


Two-Dimensional Topological Insulators: Progress and Prospects
journal, April 2017


Recent Advances in Ultrathin Two-Dimensional Nanomaterials
journal, March 2017


First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phonon Coupling in Graphene
journal, November 2013


Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds
journal, January 2018

  • Li, Geng; Zhang, Yu-Yang; Guo, Hui
  • Chemical Society Reviews, Vol. 47, Issue 16
  • DOI: 10.1039/C8CS00286J

Two-dimensional sp 2 carbon–conjugated covalent organic frameworks
journal, August 2017


Quantum Anomalous Hall Effect in 2D Organic Topological Insulators
journal, May 2013


Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
journal, July 2014

  • Xia, Fengnian; Wang, Han; Jia, Yichen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5458

Quantum Spin Hall Effect in Graphene
journal, November 2005


Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006

  • Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C.
  • Science, Vol. 314, Issue 5806, p. 1757-1761
  • DOI: 10.1126/science.1133734

Formation of hydrogenated graphene nanoripples by strain engineering and directed surface self-assembly
journal, January 2011


Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO 3
journal, March 2012


Electronic transport in two-dimensional graphene
journal, May 2011

  • Das Sarma, S.; Adam, Shaffique; Hwang, E. H.
  • Reviews of Modern Physics, Vol. 83, Issue 2, p. 407-470
  • DOI: 10.1103/RevModPhys.83.407

Two-dimensional atomic crystals
journal, July 2005

  • Novoselov, K. S.; Jiang, D.; Schedin, F.
  • Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
  • DOI: 10.1073/pnas.0502848102

Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides
journal, September 2015


Theoretical Discovery of a Superconducting Two-Dimensional Metal–Organic Framework
journal, September 2017


Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
journal, June 2017

  • Huang, Bevin; Clark, Genevieve; Navarro-Moratalla, Efrén
  • Nature, Vol. 546, Issue 7657
  • DOI: 10.1038/nature22391

Strain engineering of graphene: a review
journal, January 2016


Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters
journal, June 2017

  • Lin, X.; Lu, J. C.; Shao, Y.
  • Nature Materials, Vol. 16, Issue 7
  • DOI: 10.1038/nmat4915

Quantum spin Hall phase in 2D trigonal lattice
journal, September 2016

  • Wang, Z. F.; Jin, Kyung-Hwan; Liu, Feng
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms12746

Organic topological insulators in organometallic lattices
journal, February 2013

  • Wang, Z. F.; Liu, Zheng; Liu, Feng
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2451

Maximum asymmetry in strain induced mechanical instability of graphene: Compression versus tension
journal, December 2011

  • Zhang, Yu; Liu, Feng
  • Applied Physics Letters, Vol. 99, Issue 24
  • DOI: 10.1063/1.3666856

Two-dimensional gas of massless Dirac fermions in graphene
journal, November 2005

  • Novoselov, K. S.; Geim, A. K.; Morozov, S. V.
  • Nature, Vol. 438, Issue 7065, p. 197-200
  • DOI: 10.1038/nature04233