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Title: Probing energy landscapes in multilayer heterostructures: Challenges and opportunities

Authors:
ORCiD logo [1]; ORCiD logo [1]
  1. Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1575792
Grant/Contract Number:  
10122
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 7 Journal Issue: 11; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Chambers, Scott A., and Sushko, Peter V. Probing energy landscapes in multilayer heterostructures: Challenges and opportunities. United States: N. p., 2019. Web. doi:10.1063/1.5129155.
Chambers, Scott A., & Sushko, Peter V. Probing energy landscapes in multilayer heterostructures: Challenges and opportunities. United States. doi:10.1063/1.5129155.
Chambers, Scott A., and Sushko, Peter V. Fri . "Probing energy landscapes in multilayer heterostructures: Challenges and opportunities". United States. doi:10.1063/1.5129155.
@article{osti_1575792,
title = {Probing energy landscapes in multilayer heterostructures: Challenges and opportunities},
author = {Chambers, Scott A. and Sushko, Peter V.},
abstractNote = {},
doi = {10.1063/1.5129155},
journal = {APL Materials},
number = 11,
volume = 7,
place = {United States},
year = {2019},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5129155

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Works referenced in this record:

Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D Transistors
journal, December 2017

  • Ganeriwala, Mohit D.; Yadav, Chandan; Ruiz, Francisco G.
  • IEEE Transactions on Electron Devices, Vol. 64, Issue 12
  • DOI: 10.1109/ted.2017.2766693

Modeling techniques for quantum cascade lasers
journal, March 2014

  • Jirauschek, Christian; Kubis, Tillmann
  • Applied Physics Reviews, Vol. 1, Issue 1
  • DOI: 10.1063/1.4863665

The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p -Ge(001) heterojunction
journal, February 2017

  • Chambers, Scott A.; Du, Yingge; Comes, Ryan B.
  • Applied Physics Letters, Vol. 110, Issue 8
  • DOI: 10.1063/1.4977422

Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

  • Chambers, S. A.; Liang, Y.; Yu, Z.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3
  • DOI: 10.1116/1.1365132

Effect of applied electric field on the nonlinear optical properties of modulation-doped GaAs/Al Ga1-As double quantum well
journal, February 2019


Three‐dimensional analytical modeling and performance analysis of triple material trigate silicon‐on‐insulator MOSFET
journal, February 2019

  • Shora, Aadil T.; Khanday, Farooq A.
  • International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 32, Issue 3
  • DOI: 10.1002/jnm.2571

Disentangling specific versus generic doping mechanisms in oxide heterointerfaces
journal, May 2017


Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect
journal, December 2018


Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions
journal, September 2000

  • Chambers, S. A.; Liang, Y.; Yu, Z.
  • Applied Physics Letters, Vol. 77, Issue 11
  • DOI: 10.1063/1.1310209

In situ electron holographic analysis of biased Si n+-p junctions
journal, April 2008

  • Han, Myung-Geun; Smith, David J.; McCartney, Martha R.
  • Applied Physics Letters, Vol. 92, Issue 14
  • DOI: 10.1063/1.2908045

Differential phase-contrast microscopy at atomic resolution
journal, June 2012

  • Shibata, Naoya; Findlay, Scott D.; Kohno, Yuji
  • Nature Physics, Vol. 8, Issue 8
  • DOI: 10.1038/nphys2337

Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures
journal, April 2019

  • Gazzah, Mohamed Hichem; Chouchen, Bilel; Fargi, Abdelaali
  • Materials Science in Semiconductor Processing, Vol. 93
  • DOI: 10.1016/j.mssp.2019.01.011

Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon
journal, July 2019


Modeling and optimization of p-AlGaN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs
journal, January 2015

  • Chen, Xinhui; Ho, Kuan-Ying; Wu, Yuh-Renn
  • Optics Express, Vol. 23, Issue 25
  • DOI: 10.1364/oe.23.032367

Analytic Potential and Charge Model of Semiconductor Quantum Wells
journal, December 2015

  • Marin, E. G.; Tienda-Luna, I. M.; Ruiz, F. G.
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 12
  • DOI: 10.1109/ted.2015.2488362

Towards automated electron holographic tomography for 3D mapping of electrostatic potentials
journal, April 2010


Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
journal, October 2018

  • Douara, Abdelmalek; Djellouli, Bouaza; Abid, Hamza
  • International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 32, Issue 2
  • DOI: 10.1002/jnm.2518

A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands
journal, January 2016