Influence of plasma-activated nitrogen species on PA-MOCVD of InN

doi:10.1063/1.5126625

Title: Influence of plasma-activated nitrogen species on PA-MOCVD of InN

Authors:

Ahmad, Z. ^[1]; Cross, G. B. ^[1]; Vernon, M. ^[1]; Gebregiorgis, D. ^[2]; Deocampo, D. ^[2];

^[1]

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA and Center for Nano-Optics, Georgia State University, Atlanta, Georgia 30303, USA
Department of Geosciences, Georgia State University, Atlanta, Georgia 30303, USA

Publication Date:: 2019-11-25

Sponsoring Org.:: USDOE

OSTI Identifier:: 1575790

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 22; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Ahmad, Z., Cross, G. B., Vernon, M., Gebregiorgis, D., Deocampo, D., and Kozhanov, A. Influence of plasma-activated nitrogen species on PA-MOCVD of InN.  United States: N. p., 2019. 
        Web.  doi:10.1063/1.5126625.

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                    Ahmad, Z., Cross, G. B., Vernon, M., Gebregiorgis, D., Deocampo, D., & Kozhanov, A. Influence of plasma-activated nitrogen species on PA-MOCVD of InN.  United States.  doi:10.1063/1.5126625.

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                    Ahmad, Z., Cross, G. B., Vernon, M., Gebregiorgis, D., Deocampo, D., and Kozhanov, A. Mon .  
        "Influence of plasma-activated nitrogen species on PA-MOCVD of InN".  United States.  doi:10.1063/1.5126625.

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@article{osti_1575790,

  title        = {Influence of plasma-activated nitrogen species on PA-MOCVD of InN},

  author       = {Ahmad, Z. and Cross, G. B. and Vernon, M. and Gebregiorgis, D. and Deocampo, D. and Kozhanov, A.},

  abstractNote = {},

  doi          = {10.1063/1.5126625},

  journal      = {Applied Physics Letters},

  number       = 22,

  volume       = 115,

  place        = {United States},

  year         = {2019},

  month        = {11}

}

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DOI: 10.1063/1.5126625

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Title: Influence of plasma-activated nitrogen species on PA-MOCVD of InN

Citation Formats

Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition journal, June 2010

Calibration-free laser-induced breakdown spectroscopy for quantitative elemental analysis of materials journal, June 2012

Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy journal, April 2007

Optical emission studies of nitrogen plasma generated by IR CO 2 laser pulses journal, November 2007

Transient electron transport in wurtzite GaN, InN, and AlN journal, June 1999

Additions to the Spectrum of the Singly-lonized Nitrogen Atom journal, December 1983

Initial experiments in the migration enhanced afterglow growth of gallium and indium nitride journal, February 2012

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies journal, August 1994

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE journal, January 2018

Mechanism for THz generation from InN micropyramid emitters journal, May 2011

When group-III nitrides go infrared: New properties and perspectives journal, July 2009

Determination of the atomic nitrogen flux from a radio frequency plasma nitride source for molecular beam epitaxy systems journal, November 1998

Extracting Time-Resolved Information from Time-Integrated Laser-Induced Breakdown Spectra journal, January 2014

Role of excited nitrogen species in the growth of GaN by RF–MBE journal, July 2006

The fine-structure intervals of (N-14)+ by far-infrared laser magnetic resonance journal, June 1994

Experimental Stark Widths and Shifts for Spectral Lines of Neutral and Ionized Atoms (A Critical Review of Selected Data for the Period 1989 Through 2000) journal, September 2002

Indium nitride (InN): A review on growth, characterization, and properties journal, September 2003

Absolute densities of N and excited N2 in a N2 plasma journal, December 2003

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates journal, April 2013

Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN journal, December 2011

Atomic Data for Resonance Absorption Lines. III. Wavelengths Longward of the Lyman Limit for the Elements Hydrogen to Gallium journal, November 2003

Laser-induced breakdown spectroscopy expands into industrial applications journal, March 2014

Quantitative analysis of a brass alloy using CF-LIBS and a laser ablation time-of-flight mass spectrometer journal, December 2017

High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays journal, June 2004

The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy journal, June 1999

Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix journal, November 2017

The energetics of the GaN MBE reaction: a case study of meta-stable growth journal, June 1997

Spectroscopic characterization of laser induced breakdown in aluminium–lithium alloy samples for quantitative determination of traces journal, June 2001

Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition journal, March 2006

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth journal, May 2005

InN grown by migration enhanced afterglow (MEAglow) journal, November 2011

Effects of the narrow band gap on the properties of InN journal, November 2002

Growth of Group III Nitrides. A Review of Precursors and Techniques journal, January 1996

Doping efficiency and plasma analysis of a nitrogen electron cyclotron resonance plasma journal, February 1996

Partition Functions and Thermodynamic Properties of Nitrogen and Oxygen Plasmas journal, January 1965

Self-calibrated quantitative elemental analysis by laser-induced plasma spectroscopy: application to pigment analysis journal, August 2000

Local Thermodynamic Equilibrium in Laser-Induced Breakdown Spectroscopy: Beyond the McWhirter criterion journal, January 2010

Thermal stability of indium nitride at elevated temperatures and nitrogen pressures journal, September 1970

Carrier-mediated interaction of magnetic moments in oxygen vacancy–controlled epitaxial Mn-doped ZnO thin films journal, April 2012

Raman scattering study of anharmonic phonon decay in InN journal, June 2011

Nitride-based semiconductors for blue and green light-emitting devices journal, March 1997

Experimental Stark widths and shifts for spectral lines of neutral and ionized atoms journal, November 1990

Epitaxial growth of InN thin films by plasma-enhanced atomic layer deposition journal, December 2018

Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition
journal, June 2010

Calibration-free laser-induced breakdown spectroscopy for quantitative elemental analysis of materials
journal, June 2012

Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy
journal, April 2007

Optical emission studies of nitrogen plasma generated by IR CO ₂ laser pulses
journal, November 2007

Transient electron transport in wurtzite GaN, InN, and AlN
journal, June 1999

Additions to the Spectrum of the Singly-lonized Nitrogen Atom
journal, December 1983

Initial experiments in the migration enhanced afterglow growth of gallium and indium nitride
journal, February 2012

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
journal, August 1994

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE
journal, January 2018

Mechanism for THz generation from InN micropyramid emitters
journal, May 2011

When group-III nitrides go infrared: New properties and perspectives
journal, July 2009

Determination of the atomic nitrogen flux from a radio frequency plasma nitride source for molecular beam epitaxy systems
journal, November 1998

Extracting Time-Resolved Information from Time-Integrated Laser-Induced Breakdown Spectra
journal, January 2014

Role of excited nitrogen species in the growth of GaN by RF–MBE
journal, July 2006

The fine-structure intervals of (N-14)+ by far-infrared laser magnetic resonance
journal, June 1994

Experimental Stark Widths and Shifts for Spectral Lines of Neutral and Ionized Atoms (A Critical Review of Selected Data for the Period 1989 Through 2000)
journal, September 2002

Indium nitride (InN): A review on growth, characterization, and properties
journal, September 2003

Absolute densities of N and excited N2 in a N2 plasma
journal, December 2003

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates
journal, April 2013

Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
journal, December 2011

Atomic Data for Resonance Absorption Lines. III. Wavelengths Longward of the Lyman Limit for the Elements Hydrogen to Gallium
journal, November 2003

Laser-induced breakdown spectroscopy expands into industrial applications
journal, March 2014

Quantitative analysis of a brass alloy using CF-LIBS and a laser ablation time-of-flight mass spectrometer
journal, December 2017

High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays
journal, June 2004

The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy
journal, June 1999

Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix
journal, November 2017

The energetics of the GaN MBE reaction: a case study of meta-stable growth
journal, June 1997

Spectroscopic characterization of laser induced breakdown in aluminium–lithium alloy samples for quantitative determination of traces
journal, June 2001

Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition
journal, March 2006

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth
journal, May 2005

InN grown by migration enhanced afterglow (MEAglow)
journal, November 2011

Effects of the narrow band gap on the properties of InN
journal, November 2002

Growth of Group III Nitrides. A Review of Precursors and Techniques
journal, January 1996

Doping efficiency and plasma analysis of a nitrogen electron cyclotron resonance plasma
journal, February 1996

Partition Functions and Thermodynamic Properties of Nitrogen and Oxygen Plasmas
journal, January 1965

Self-calibrated quantitative elemental analysis by laser-induced plasma spectroscopy: application to pigment analysis
journal, August 2000

Local Thermodynamic Equilibrium in Laser-Induced Breakdown Spectroscopy: Beyond the McWhirter criterion
journal, January 2010

Thermal stability of indium nitride at elevated temperatures and nitrogen pressures
journal, September 1970

Carrier-mediated interaction of magnetic moments in oxygen vacancy–controlled epitaxial Mn-doped ZnO thin films
journal, April 2012

Raman scattering study of anharmonic phonon decay in InN
journal, June 2011

Nitride-based semiconductors for blue and green light-emitting devices
journal, March 1997

Experimental Stark widths and shifts for spectral lines of neutral and ionized atoms
journal, November 1990

Epitaxial growth of InN thin films by plasma-enhanced atomic layer deposition
journal, December 2018