Influence of plasma-activated nitrogen species on PA-MOCVD of InN

Ahmad, Z.; Cross, G. B.; Vernon, M.; Gebregiorgis, D.; Deocampo, D.; Kozhanov, A.

doi:10.1063/1.5126625

Title: Influence of plasma-activated nitrogen species on PA-MOCVD of InN

Journal Article · 24 November 2019 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5126625 · OSTI ID:1575790

Ahmad, Z.; Cross, G. B.; Vernon, M.; Gebregiorgis, D.; Deocampo, D.;

We report on the influence of various plasma species on the growth and structural properties of indium nitride in plasma-assisted metalorganic chemical vapor deposition. Atomic emission spectroscopy was used to quantify the molecular, neutral, and ionized nitrogen species concentrations above the growth surface. Reflectance and Raman spectroscopy and X-ray diffraction techniques were used to characterize the grown InN films. It has been found that ionized rather than molecular or neutral nitrogen species is positively correlated with the InN growth rate. We conclude that InN formation in the present case is due to the chemical combination of atomic nitrogen ions with indium.

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Sponsoring Organization:: USDOE

OSTI ID:: 1575790

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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