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Title: Influence of plasma-activated nitrogen species on PA-MOCVD of InN

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5126625 · OSTI ID:1575790

We report on the influence of various plasma species on the growth and structural properties of indium nitride in plasma-assisted metalorganic chemical vapor deposition. Atomic emission spectroscopy was used to quantify the molecular, neutral, and ionized nitrogen species concentrations above the growth surface. Reflectance and Raman spectroscopy and X-ray diffraction techniques were used to characterize the grown InN films. It has been found that ionized rather than molecular or neutral nitrogen species is positively correlated with the InN growth rate. We conclude that InN formation in the present case is due to the chemical combination of atomic nitrogen ions with indium.

Sponsoring Organization:
USDOE
OSTI ID:
1575790
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 115; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

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