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Title: Correlating thermoelectric (Bi,Sb) 2Te 3 film electric transport properties with microstructure

Abstract

The room temperature electronic transport properties of 1 μm thick Bi0.4Sb1.6Te3 (BST) films correlate with overall microstructural quality. Films with homogeneous composition are deposited onto fused silica substrates, capped with SiN to stop both oxidation and Te loss, and postannealed to temperatures ranging from 200 to 450 °C. BST grain sizes and (00l) orientations improve dramatically with annealing to 375 °C, with smaller increases to 450 °C. Tiny few-nanometer-sized voids in the as-deposited film grain boundaries coalesce into larger void sizes up to 300 nm with annealing to 350 °C; the smallest voids continue coalescing with annealing to 450 °C. These voids are decorated with few-nanometer-sized Sb clusters that increase in number with increasing annealing temperatures, reducing the Sb content of the remaining BST film matrix. Resistivity decreases linearly with increasing temperature over the entire range studied, consistent with improving crystalline quality. The Seebeck coefficient also improves with crystalline quality to 350 °C, above which void coalescence and reduced Sb content from the BST matrix correlate with a decrease in the Seebeck coefficient. Yet, a plateau exists for an optimal power factor between 350 and 450 °C, implying thermal stability to higher temperatures than previously reported.

Authors:
 [1];  [2];  [1];  [1];  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); 3M Corporate Research Lab., St. Paul, MN (United States)
  3. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1575278
Alternate Identifier(s):
OSTI ID: 1510360
Report Number(s):
SAND-2019-0942J
Journal ID: ISSN 0021-8979; 671922
Grant/Contract Number:  
AC04-94AL85000; NA0003525AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 125; Journal Issue: 17; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; bismuth antimony telluride; films; thermoelectric

Citation Formats

Siegal, M. P., Podkaminer, J., Lima-Sharma, A. L., Sharma, P. A., and Medlin, D. L. Correlating thermoelectric (Bi,Sb)2Te3 film electric transport properties with microstructure. United States: N. p., 2019. Web. doi:10.1063/1.5089647.
Siegal, M. P., Podkaminer, J., Lima-Sharma, A. L., Sharma, P. A., & Medlin, D. L. Correlating thermoelectric (Bi,Sb)2Te3 film electric transport properties with microstructure. United States. doi:10.1063/1.5089647.
Siegal, M. P., Podkaminer, J., Lima-Sharma, A. L., Sharma, P. A., and Medlin, D. L. Thu . "Correlating thermoelectric (Bi,Sb)2Te3 film electric transport properties with microstructure". United States. doi:10.1063/1.5089647.
@article{osti_1575278,
title = {Correlating thermoelectric (Bi,Sb)2Te3 film electric transport properties with microstructure},
author = {Siegal, M. P. and Podkaminer, J. and Lima-Sharma, A. L. and Sharma, P. A. and Medlin, D. L.},
abstractNote = {The room temperature electronic transport properties of 1 μm thick Bi0.4Sb1.6Te3 (BST) films correlate with overall microstructural quality. Films with homogeneous composition are deposited onto fused silica substrates, capped with SiN to stop both oxidation and Te loss, and postannealed to temperatures ranging from 200 to 450 °C. BST grain sizes and (00l) orientations improve dramatically with annealing to 375 °C, with smaller increases to 450 °C. Tiny few-nanometer-sized voids in the as-deposited film grain boundaries coalesce into larger void sizes up to 300 nm with annealing to 350 °C; the smallest voids continue coalescing with annealing to 450 °C. These voids are decorated with few-nanometer-sized Sb clusters that increase in number with increasing annealing temperatures, reducing the Sb content of the remaining BST film matrix. Resistivity decreases linearly with increasing temperature over the entire range studied, consistent with improving crystalline quality. The Seebeck coefficient also improves with crystalline quality to 350 °C, above which void coalescence and reduced Sb content from the BST matrix correlate with a decrease in the Seebeck coefficient. Yet, a plateau exists for an optimal power factor between 350 and 450 °C, implying thermal stability to higher temperatures than previously reported.},
doi = {10.1063/1.5089647},
journal = {Journal of Applied Physics},
number = 17,
volume = 125,
place = {United States},
year = {2019},
month = {5}
}

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